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Detail of > 38103-06-9

  • CAS Number:
  • 38103-06-9
  • Name:
  • 1,3-Isobenzofurandione, 5,5'-((1-methylethylidene)bis(4,1-phenyleneoxy))bis-

  • Superlist Name:
  • 4,4'-(4,4'-Isopropylidenediphenoxy)bis(phthalic anhydride)
  • Formula:
  • C31H20O8
  • Molecular Structure:
  • Synonyms:
  • 2,2-Bis[4-(3,4-dicarboxyphenoxy)phenyl]propanedianhydride;4,4'-[Isopropylidenebis(p-phenyleneoxy)]diphthalic anhydride;BisphenolA dianhydride;Ultem DA;
  • Molecular Weight:
  • 520.49
  • EINECS:
  • 253-781-7
  • Density:
  • 1.406 g/cm3
  • Melting Point:
  • 184-187 °C(lit.)
  • Boiling Point:
  • 712.283 °C at 760 mmHg
  • Flash Point:
  • 302.233 °C
  • Hazard Symbols:
  • IrritantXi
  • Risk Codes:
  • 36/37/38-42
  • Safety:
  • 26-36Details
  • Deleted CAS:
  • 159787-75-4, 224302-28-7, 360796-72-1, 74343-20-7
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CAS No. 

38103-06-9 4,4'-(4,4'-Isopropylidenediphenoxy)bis(phthalic anhydride)Competitive Product

1,3-Isobenzofurandione, 5,5'-((1-methylethylidene)bis(4,1-phenyleneoxy))bis-
China (Mainland)   QS  6760
  • Tel:+86 21 34123252
  • Address:3455 Chunshen Road, Shanghai 201100, China
MSN:xinchem@live.cn

CAS No. 

38103-06-9 4,4'-(4,4'-Isopropylidenediphenoxy)bis(phthalic anhydride)Competitive Product

China (Mainland)   2404
  • Tel:+86-519-86461196
  • Address:Miaoqiao St., Wujin District, Changzhou City, Jiangsu, China.

CAS No. 

38103-06-9 4,4'-(4,4'-Isopropylidenediphenoxy)bis(phthalic anhydride)

Assay:99.5%  Appearance:Powder  Package:25kg/drum
China (Mainland)   1890
  • Tel:86-371-87093236
  • Address:Zhengzhou International Trade New Territory,Jinshui District,Zhengzhou ,China
MSN:kenpclo@hotmail.com

CAS No. 

38103-06-9 4,4'-(4,4'-Isopropylidenediphenoxy)bis(phthalic anhydride)

Assay:98%
China (Mainland)   ISO  4490
  • Tel:+86-571-88938639
  • Address:B/2601 Fuli Building, 328# WenEr Rd. Hangzhou City 310012 China

CAS No. 

38103-06-9 4,4'-(4,4'-Isopropylidenediphenoxy)bis(phthalic anhydride)

BPADA CAS:38103-06-9 Molecular Formula: C31H20O8 Molecular Weight: 520.49 Appearance: white powder or crystal Packing: 25KG/BAG
China (Mainland)   2078
  • Tel:0086-27-83607103
  • Address:No.498, Jianshe Ave, Wuhan, China

CAS No. 

38103-06-9 4,4'-(4,4'-Isopropylidenediphenoxy)bis(phthalic anhydride)

BPADA CAS:38103-06-9 Molecular Formula: C31H20O8 Molecular Weight: 520.49 Appearance: white powder or crystal Packing: 25KG/BAG Sodium hypophosphite CAS No: 7681-53-0 Assay: 101% min. Ca: 30ppm max. SO4: 30ppm max. CI: 30ppm max. Fe: 1ppm max. As: 1ppm max.
China (Mainland)  
  • Tel:0086-27-83607103
  • Address:no.498jianshe ave.,wuhan china

CAS No. 

38103-06-9 4,4'-(4,4'-Isopropylidenediphenoxy)bis(phthalic anhydride)

China (Mainland)   88
  • Tel:25- 84293350
  • Address:nanjing
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    Reference

    Polyimide-polydiorganosiloxane block polymers
    Polyimide-polydiorganosiloxane block polymers. Berger, Abe; Juliano, Peter C. (General Electric Co., USA). U.S. 38103-06-9 and 101-77-9 are also occured in this study. US 4011279 8 Mar 1977, 5 pp. (English). (United States of America). CODEN: USXXAM. CLASS: IC: C08L083-10. NCL: 260824000R. APPLICATION: US 75-615991 23 Sep 1975. DOCUMENT TYPE: Patent CA Section: 36 (Plastics Manufacture and Processing) Gel-free block polymers of polyimides with siloxanes were prepd. by refluxing a mixt. of an excess of an arom. dianhydride and an arom. diamine in the presence of an acid catalyst while removing water azeotropically, and heating the resulting prepolymer with an alkylamine-terminated siloxane. Thus, methylenedianiline [101-77-9] 0.5940, 2,2-bis[4-(3,4-dicarboxyphenoxy)phenyl] propane dianhydride [38103-06-9] 2.6, and o-dichlorobenzene 48 parts were heated at 184.degree. in the presence of .apprx.1% toluenesulfonic acid and refluxed at 240-60.degree. while removing water. Aminoalkyl-terminated dimethylsiloxane (0.5165 parts) was added, and the mixt. was stirred 6 h at <210.degree. to give a polyetherimide-siloxane block copolymer having intrinsic viscosity 0.72 in CH2Cl2 and a yield 95%. The block copolymer was useful for coating semiconductors. .
    Polyamideimide resin, producing polyamideimide resin, polyamideimide resin composition, film-forming material and adhesive for electronic parts
    Polyamideimide resin, producing polyamideimide resin, polyamideimide resin composition, film-forming material and adhesive for electronic parts. Hikita, Takami; Kondo, Takashi; Mochizuki, Amane (Nitto Denko Corporation, Japan). Eur. Pat. Appl. EP 1496078 A1 12 Jan 2005, 21 pp. DESIGNATED STATES: R: AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LI, LU, NL, SE, MC, PT, IE, SI, LT, LV, FI, RO, MK, CY, AL, TR, BG, CZ, EE, HU, PL, SK, HR. (English). (European Patent Organization). CODEN: EPXXDW. CLASS: ICM: C08G073-14. ICS: C08L079-08; C09J179-08; C09D179-08. APPLICATION: EP 2004-254063 7 Jul 2004. PRIORITY: JP 2003-193031 7 Jul 2003; JP 2004-18655 27 Jan 2004. DOCUMENT TYPE: Patent CA Section: 35 (Chemistry of Synthetic High Polymers) Section cross-reference(s): 38 The resin compn. having low elasticity and excellent in flexibility and heat resistance, elec. characteristics and adhesivity, comprises structural unit derived from arom. 38103-06-9 and 25085-99-8 are also in the experiment. dianhydride including Ar1 and Ar2, 31 of the structural unit represented by [NHCO(CH2CH:CHCH2)a(CH2CH(CH:Me))b(CH2CHCN)cCONHAr2], and the structural unit [NHCO(CH2CH:CHCH2)dCONHAr2]. The nos. k, m, and n of polyamide resin satisfy the relation 0 < m/(k + m + n) £ 0.1, where the resin has a no.-av. mol. wt. 2000-50,000; where, Ar1 and Ar2 each represent an arom. group that may be substituted, where, Ar2 is defined as described above, and a, b and c each = 0-100 with the ratio a/b 0/1 to 1/0, the ratio (a + b)/c 1/0 to 0/1, and the sum (a + b + c) 1-100, where, Ar2 is defined as described above, and d = 1-100. .

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