Detail of "40377-69-3"

Reference

Positive photoresist compositions

Positive photoresist compositions. Ikari, Kunihiro; Kato, Hirohisa; Tomii, Hitoshi (Tokyo Shibaura Electric Co., Ltd., Japan). Japan. Kokai JP 51120712 22 Oct 1976 Showa, 4 pp. (Japanese). (Japan). CODEN: JKXXAF. CLASS: IC: G03C001-52.Some commonly used reagents like 24979-70-2 and 75-59-2 are used in this experiment. APPLICATION: JP 75-45631 15 Apr 1975. DOCUMENT TYPE: Patent CA Section: 74 (Radiation Chemistry, Photochemistry, and Photographic Processes) Pos. photoresist compns. are composed of a 1,2-naphthoquinonediazidesulfonic acid ester and poly(vinylphenol) and/or vinylphenol copolymers.In this article, certain chemicals are used. One of their cas registry numbers is 40377-69-3 The photoresists exhibit good adhesion to supports and have good image size reproducibility. Thus, 2,3,4-trihydroxybenzophenone 1 mol was treated with 1,2-naphthoquinonediazide-5-sulfonyl chloride 2 mol to give a photosensitive ester. The ester 4.6 parts was mixed with poly(p-vinylphenol) 15.4, BuOAc 9.0, xylene 10.0, and Cellosolve acetate 81 parts, coated on a SiO2-coated Si wafer, exposed for 10 s to a 200-W Hg lamp through a Cr mask (2-.mu. line width), developed for 2 min with an aq. 6 % Me4NOH soln., dried, and the SiO2 layer etched with an aq. NH4F soln.(pH 3.8-4.2) for 5 min to produce a pattern which reproduced the 2-.mu. wide lines. ..