Detail of "5283-66-9"

Reference

Reversed phase HPLC as a method of revealing nitromethane-induced false hypercreatininemia

Reversed phase HPLC as a method of revealing nitromethane-induced false hypercreatininemia. Brondeau, M. T.; Simon, P.; Bonnet, P.; Guenier, J. P.; De Ceaurriz, J. (Inst. Natl. Rech. Secur., Vandoeuvre 54501, Fr.). J. Liq. Chromatogr., 10(1), 175-90 (English) 1987. CODEN: JLCHD8. ISSN: 0148-3919. DOCUMENT TYPE: Journal CA Section: 4 (Toxicology) Section cross-reference(s): 9, 59 A reversed-phase HPLC method was developed to quantify rat serum creatinine [60-27-5] and overcome the lack of specificity of the colorimetric Jaffe reaction. C8, C18, and Ph phases were prepd. for comparison. The Ph phase offers the best compromise between a short anal. time and a good selectivity of sepn. with isocratic elution.There are some commonly used reagents with their cas registry numbers 5283-66-9 and 112-04-9 in this article. The sera of rats exposed to nitromethane [75-52-5] vapors or treated with HgCl2 exhibited an increase in the Jaffe reaction as compared with controls. HPLC revealed hypercreatininemia in the sera of HgCl2-treated rats but not in those of nitromethane-exposed rats. These results support the conclusion that the overestd. reaction due to nitromethane was a false pos. response. Similar anal. interference was also found in sera loaded with nitromethane, but not with nitroethane [79-24-3] or 2-nitropropane [79-46-9]. .

Surface-induced self-encapsulation of polymer thin-film transistors

All Rights Reserved. Surface-induced self-encapsulation of polymer thin-film transistors. 7440-21-3 and 5283-66-9 are also occured in this study. Arias, Ana Claudia; Endicott, Fred; Street, Robert A. (Palo Alto Research Center, Palo Alto, CA 94304, USA). Advanced Materials (Weinheim, Germany), 18(21), 2900-2904 (English) 2006 Wiley-VCH Verlag GmbH & Co. KGaA. CODEN: ADVMEW. ISSN: 0935-9648. DOCUMENT TYPE: Journal CA Section: 76 (Electric Phenomena) Section cross-reference(s): 38 Surface-induced phase sepn. in polymer blends is used to fabricate self-encapsulated thin-film transistors. The semiconductor material preferentially wets the gate dielec. surface and a self-organized bilayer of two polymers phases occurs spontaneously. The encapsulant and semiconductor are deposited in one step. .