Reference

Antistatic treatment of plastic surfaces

Antistatic treatment of plastic surfaces. (Hitachi, Ltd., Japan). Jpn. Kokai Tokkyo Koho JP 60089342 A2 20 May 1985 Showa, 6 pp. (Japanese). (Japan). CODEN: JKXXAF. CLASS: ICM: B29C071-04. ICA: C08J007-00. APPLICATION: JP 83-195968 21 Oct 1983. DOCUMENT TYPE: Patent CA Section: 38 (Plastics Fabrication and Uses) A plastic is cold plasma-treated using an organometallic compd. to give a durable antistatic surface. Thus, polypropylene (I) [9003-07-0] plasma-treated at 13.56 MHz and 200 W for 30 min in 1 ′ 10-5 torr (EtO)5Ta [6074-84-6] had surface resistivity <1 ′ 109 W initially and ￡1 ′ 1010 W after 3 mo (vs. 1016-1015 W for untreated I).

Semiconductor devices and fabrication of devices by formation of gate insulator film in MIS transistors

Semiconductor devices and fabrication of devices by formation of gate insulator film in MIS transistors. Kadoshima, Masaru; Ubutame, Toshihide; Suzuki, Takaaki; Murata, Yasuhiko (Hitachi Ltd., Japan). Jpn. Kokai Tokkyo Koho JP 2003017686 A2 17 Jan 2003, 7 pp. (Japanese). (Japan). CODEN: JKXXAF. CLASS: ICM: H01L029-78. ICS: C23C016-40; H01L021-316. APPLICATION: JP 2001-197841 29 Jun 2001. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) Section cross-reference(s): 57 The title semiconductor devices have a A1-xBxOy (A = Al, Sc, Y, Ln; Ln = rare earth metal; B = Ta, Nb, W; x =0.01-0.3, y =1.5-3.0) layer and an optional SiO2 and/or Si3N4 layer as a gate insulator film formed on a single crystal Si substrate. 6074-84-6 and 75-24-1 which are cas registry numbers of substances are two of reagents here. The A1-xBxOy composite oxide compensates neg. fixed charge in the Al2O3 and/or Ln2O3 gate insulator film, controls flat band voltage shift in the semiconductor devices and consequently gives the MIS transistors high dielec. permittivity gate insulators (gate length ￡0.1 mm). .