Reference

Metal deposition for microelectronic applications studied by RBS technique

Metal deposition for microelectronic applications studied by RBS technique. Eskildsen, Svend Stensig; Soerensen, Gunnar (Inst. Phys., Univ. Aarhus, Aarhus DK-8000, Den.). Nucl. Instrum. Methods Phys. Res., 218(1-3), 485-8 (English) 1983. CODEN: NIMRD9. ISSN: 0167-5087. DOCUMENT TYPE: Journal CA Section: 76 (Electric Phenomena) Two methods of achieving selective metal deposition at low substrate temps. are treated, one being a dry technique and the other involving wet processes. A Pt-metal chem. compd. (e.g., PdBr2 or PdCl2) is dissolved in an org. 7440-02-0 and 7647-10-1 are also in the experiment. solvent and deposited on Al2O3 or polyimide by a spin-on technique. Low-dose (~8 ′ 1014 ion/cm2) implantation of 100-500 keV inert gas ions results in an ion-beam-induced decompn. of the Pd compd., and the Pd atoms are partly recoil-implanted into the substrate. The implantation can be done selectively, and the non-exposed film is easily dissolved. Rutherford-backscattering spectroscopy (RBS) was used to follow stoichiometric changes in the metal contg. film. The Pd atoms act as catalysts for electroless Ni plating. The kinetics of the wet plating process were followed by RBS. Conductive layers may be formed both by the dry and the wet process, giving resistivities in a wide range. .

Reactions of vinylcyclopropane and derivatives with palladium(II) chloride

Reactions of vinylcyclopropane and derivatives with palladium(II) chloride. Williams, Jimmie Lewis (Univ. California, Riverside, CA, USA). 239 pp. Avail.Several reagents with their cas registry numbers 693-86-7 and 7647-10-1 are used here. Univ. Microfilms Int., Order No. DA8323450 From: Diss. Abstr. Int. B 1984, 44(7), 2157 (English) 1983. DOCUMENT TYPE: Dissertation CA Section: 29 (Organometallic and Organometalloidal Compounds) Abstract Unavailable .