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CAS No.: | 7783-54-2 |
---|---|
Name: | Nitrogen trifluoride |
Article Data: | 107 |
Molecular Structure: | |
Formula: | F3N |
Molecular Weight: | 71.0019 |
Synonyms: | Nitrogentrifluoride; Perfluoroammonia; Trifluoroamine; Trifluoroammonia |
EINECS: | 232-007-1 |
Density: | 1.361 g/cm3 |
Melting Point: | ?206.8 °C (66.35 K) |
Boiling Point: | -129 ºC |
Solubility: | Solubility in water 0.021 vol/vol (20 °C, 1 bar) |
Appearance: | colorless gas |
Hazard Symbols: | O |
Risk Codes: | 8-20 |
Safety: | 17-23-38 |
Transport Information: | UN 2451 |
PSA: | 3.24000 |
LogP: | 0.94190 |
(Cl2Te)2N(1+)*GaCl4(1-)=[(Cl2Te)2N]GaCl4
arsenic pentafluoride
A
nitrogen trifluoride
Conditions | Yield |
---|---|
In liquid sulphur dioxide Ga-compd.:AsF5 molar ratio was 1:2.5, stirring for 12 h at 20 °C; soln. was concd. in vac., crystn. on cooling, drying for 12 h. in vac. at 20 °C, elem. anal.; NF3 was detected by IR; | A n/a B 75% |
tetrafluorohydrazine
carbon monoxide
A
nitrogen trifluoride
B
dinitrogen difluoride
C
Carbonyl fluoride
D
trifluoromethylamide
Conditions | Yield |
---|---|
byproducts: N2O, CO2, SiF4; other Radiation; ratio of N2F4 and CO = 1:2, irradiation by high pressure Hg lamp for 2h at room temp.; fractionated distn.; | A n/a B n/a C n/a D 15% |
byproducts: N2O, CO2, SiF4; other Radiation; ratio of N2F4 and CO = 1:2, irradiation by high pressure Hg lamp for 2h at room temp.; fractionated distn.; | A n/a B n/a C n/a D 15% |
1-fluoroethylene
A
nitrogen trifluoride
B
hydrogen cyanide
C
hydrogen fluoride
D
ammonia
Conditions | Yield |
---|---|
byproducts: CH3CN, C2H2F2, CH2CN; in a Pyrex tube at 0.95 Torr; products were detected by mass spectrometry; |
Conditions | Yield |
---|---|
In hydrogen fluoride Electrolysis; in anhydrous HF at -10°C; |
tetrafluorohydrazine
A
nitrogen trifluoride
C
dinitrogen tetraoxide
D
nitrosyl fluoride
Conditions | Yield |
---|---|
In neat (no solvent) 60°C, 18 h;; |
A
nitrogen trifluoride
B
nitrogen
C
hydrogen
D
ozone
E
dinitrogen monoxide
Conditions | Yield |
---|---|
In melt byproducts: O2; Electrolysis; reaction by electrolysis of molten NH4F*HF with a Cu cathode and a graphite anode at 125 °C;; | |
In melt byproducts: O2; Electrolysis; reaction by electrolysis of molten NH4F*HF with a Cu cathode and a graphite anode at 125 °C;; |
Conditions | Yield |
---|---|
byproducts: N2, HF; violent reaction; further unidenfed products formed; | |
In neat (no solvent) | |
In neat (no solvent) | |
byproducts: N2, HF; violent reaction; further unidenfed products formed; |
Conditions | Yield |
---|---|
In neat (no solvent) quenching reaction at 1500-4000K;; |
hydrogen fluoride
guanidine nitrate
A
nitrogen trifluoride
B
carbon tetrafluoride
C
nitrogen
Conditions | Yield |
---|---|
In hydrogen fluoride Electrolysis; at 15°C; ratio of NF3:CF4 = 2.5; 40 % soln. of guanidine in anhydrous liquid HF; | |
In hydrogen fluoride HF (liquid); Electrolysis; at 15°C; ratio of NF3:CF4 = 2.5; 40 % soln. of guanidine in anhydrous liquid HF; |
Conditions | Yield |
---|---|
In neat (no solvent) | |
In neat (no solvent) | >99 |
In neat (no solvent) | |
In neat (no solvent) | >99 |
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NITROGEN TRIFLUORIDE(7783-54-2) is the chemical compound with the formula F3N .Its molar weight is 71.
NITROGEN TRIFLUORIDE(7783-54-2) chemical structural formula is
Synonyms:N,N,N-Trifluoroamine;NF3;Nitrogen fluoride (NF3);nitrogenfluoride(nf3);Perfluoroammonia;Stickstoff(III)-fluorid;Stickstofftrifluorid;Trifluoroamine
mp: -207 ℃
bp: -129 ℃
Water Solubility: insoluble
CAS :7783-54-2
NITROGEN TRIFLUORIDE(7783-54-2)is used in the plasma etching of silicon wafers. Today it is mainly employed in the cleaning of the PECVD chambers in the high volume production of liquid crystal displays and silicon-based thin film solar cells. In these applications NF3 is initially broken down in situ, by a plasma. The resulting fluorine atoms are the active cleaning agents that attack the polysilicon,silicon nitride and silicon oxide. Nitrogen trifluoride can be used as well with tungsten silicide, and tungsten produced by CVD. Erroneously NF3 has been considered as an environmentally preferable substitute for perfluorocarbons such as hexafluoroethane,sulfur hexafluoride etc. The process utilization of the chemicals applied in plasma processes is typically below 20 %. Therefore some of the PFCs and also of the NF3 always escape into the atmosphere. Modern gas abatement systems can decrease such emissions.
Recently elemental fluorine has been introduced as an environmentally friendly replacement for nitrogen trifluoride in state-of-the-art high volume manufacturing of flat panel displays and solar cell manufacturing.
NITROGEN TRIFLUORIDE(7783-54-2) is also used in hydrogen fluoride and deuterium fluoride lasers, which are types of chemical lasers. It is preferred to fluorine gas due to its convenient handling properties, reflecting its considerable stability.
It is compatible with steel and Monel, as well as several plastics.
1. | ihl-rat LC50:6700 ppm/1H | TXAPA9 Toxicology and Applied Pharmacology. 26 (1973),1. | ||
2. | ihl-mus LC50:2000 ppm/4H | 34ZIAG Toxicology of Drugs and Chemicals ,Deichmann, W.B.,New York, NY.: Academic Press, Inc.,1969,427. | ||
3. | ihl-dog LC50:9600 ppm/1H | AMRL** Aerospace Medical Research Laboratory Report. (Aerospace Technical Div., Air Force Systems Command, Wright-Patterson Air Force Base, OH 45433) TR-69-84 ,1969. | ||
4. | ihl-mky LC50:7500 ppm/1H | AMRL** Aerospace Medical Research Laboratory Report. (Aerospace Technical Div., Air Force Systems Command, Wright-Patterson Air Force Base, OH 45433) TR-69-84 ,1969. |