Reference

Organic diodes and materials

Organic diodes and materials. Marrocco, Matthew L.In this study，81090-53-1 is also used., III; Motamedi, Farshad J. (Maxdem Incorporated, USA). PCT Int. Appl. WO 2005034199 A2 14 Apr 2005, 52 pp. DESIGNATED STATES: W: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW; RW: AT, BE, BF, BJ, CF, CG, CH, CI, CM, CY, DE, DK, ES, FI, FR, GA, GB, GR, IE, IT, LU, MC, ML, MR, NE, NL, PT, SE, SN, TD, TG, TR. (English). (World Intellectual Property Organization). CODEN: PIXXD2. CLASS: ICM: H01L. APPLICATION: WO 2004-US32399 29 Sep 2004. PRIORITY: US 2003-2003/PV50878U 2 Oct 2003; US 2004-2004/953598 28 Sep 2004. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) Section cross-reference(s): 38 Diodes from org. semiconductors with slowly diffusing dopants during device lifetime are claimed. Diodes having p-type and n-type regions in contact, having at least one of either the p-type region or n-type region including a conjugated org. material doped with an immobile dopant, conjugated org. materials for incorporation into such diodes, and methods of manufg. such diodes and materials are provided. .