CAS No.920-68-3,Silanamine,N,1,1,1-tetramethyl-N-(trimethylsilyl)- Suppliers

Detail of "920-68-3"

CAS Number:

920-68-3

Name:

Silanamine,N,1,1,1-tetramethyl-N-(trimethylsilyl)-

Superlist Name:

Heptamethyldisilazane

Molecular Structure:

Formula:

C₇H₂₁NSi₂

Molecular Weight:

175.42

Synonyms:

Disilazane,heptamethyl- (6CI,7CI);Methylbis(trimethylsilyl)amine;N,N-Bis(trimethylsilyl)methylamine;

EINECS:

213-061-5

Density:

0.797 g/cm³

Boiling Point:

149 °C at 760 mmHg

Flash Point:

43.9 °C

Solubility:

Decomposes in water

Appearance:

Clear and colorless liquid

Hazard Symbols:

Risk Codes:

10-36/37/38

Safety:

26-36 Details

Transport Information:

UN 1993 3/PG 3

Reference

Electron diffraction study of the molecular structure of N-methylbis(trimethylsilyl)amine in the gas phase: Electron diffraction study of the molecular structure of N-methylbis(trimethylsilyl)amine in the gas phase. Rankin, David W. H.; Robertson, Heather E. (Dep. 920-68-3 are also occured in this study. Chem., Univ. Edinburgh, Edinburgh EH9 3JJ, UK). J. Chem. Soc., Dalton Trans., (4), 785-8 (English) 1987. CODEN: JCDTBI. ISSN: 0300-9246. DOCUMENT TYPE: Journal CA Section: 65 (General Physical Chemistry) The mol. structure of NMe(SiMe3)2 in the gas phase was detd. by electron diffraction. The mol. has a planar NCSi2 skeleton with the SiNSi angle 129.4(6)°. Other important parameters (ra) are: r(Si-N) 171.9(4), r(Si-C) 187.5(3), r(C-N) 149.8(7) pm; angle CSiC 105.6°. The steric requirements of the bulky SiMe3 groups are accommodated by the wide SiNSi and narrow CSiC angles, rather than by elongation of the Si-N bonds. The heavy-atom skeleton has C2 symmetry, with the SiMe3 groups twisted 35.2° away from the positions in which one Si-C bond on each group eclipses the N-C bond, and this has the effect of minimizing the interactions between Me groups on Si and on N. .

Fabrication and patterning of SiO2 film with good insulating property by photolithography: Fabrication and patterning of SiO2 film with good insulating property by photolithography. Sakata, Yoshikazu (Oki Electric Ind Co Ltd, Japan). Jpn. Kokai Tokkyo Koho JP 09008024 A2 10 Jan 1997 Heisei, 9 pp. (Japanese). (Japan). CODEN: JKXXAF.There are some reagents with their cas registry numbers 999-97-3 and 920-68-3 are used in this study. CLASS: ICM: H01L021-316. ICS: C01B033-12; C08G077-18; C08L083-06; G03F007-075; H01L021-027; H01L021-312. APPLICATION: JP 1995-157316 23 Jun 1995. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) Section cross-reference(s): 74 The film is fabricated by there steps; applying a compn. contg. a resin having a unit of SiO4-n(OR)n (R = alkyl; 0 ￡ n < 4) and a radiation- or heat-sensitive acid generator on a substrate, irradiating, heating, and exposing the film in a basic gas. The pattern is fabricated by selective irradn. of as-formed film on substrate, followed by heating, developing, and exposing in the basic gas by heating. The film is useful as elec. insulating films or etching masks in semiconductor processing. .

Detail of "920-68-3"

Silanamine,N,1,1,1-tetramethyl-N-(trimethylsilyl)-

Famous Chemical Enterprises

Related products

Other Products

Supplier Location

Business Type

Certificates

CAS No.920-68-3 Heptamethyldisilazane

CAS No.920-68-3 Heptamethyldisilazane

CAS No.920-68-3 Heptamethyldisilazane

CAS No.920-68-3 Heptamethyldisilazane

CAS No.920-68-3 Heptamethyldisilazane

CAS No.920-68-3 Heptamethyldisilazane

CAS No.920-68-3 Heptamethyldisilazane

CAS No.920-68-3 Heptamethyldisilazane

CAS No.920-68-3 Heptamethyldisilazane

CAS No.920-68-3 Heptamethyldisilazane

CAS No.920-68-3 Heptamethyldisilazane

CAS No.920-68-3 Heptamethyldisilazane

CAS No.920-68-3 Heptamethyldisilazane

CAS No.920-68-3 Heptamethyldisilazane

CAS No.920-68-3 Heptamethyldisilazane

Reference