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12067-55-9

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12067-55-9 Usage

General Description

Yttrium silicide is a chemical compound composed of yttrium and silicon, with the chemical formula YSi. It is a refractory material with a high melting point and is commonly used as a semiconductor in electronic devices. Yttrium silicide is known for its high thermal stability and is often used as a coating or in thin film form for various applications in the electronics industry. It is also used in the production of specialized alloys and as a catalyst in chemical reactions. Yttrium silicide is a non-toxic material, but proper handling and disposal procedures should be followed to minimize environmental impacts.

Check Digit Verification of cas no

The CAS Registry Mumber 12067-55-9 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,6 and 7 respectively; the second part has 2 digits, 5 and 5 respectively.
Calculate Digit Verification of CAS Registry Number 12067-55:
(7*1)+(6*2)+(5*0)+(4*6)+(3*7)+(2*5)+(1*5)=79
79 % 10 = 9
So 12067-55-9 is a valid CAS Registry Number.
InChI:InChI=1/2H13Si.Y/h2*1H13;/rH26Si2Y/c1-3-2/h1-2H13

12067-55-9Downstream Products

12067-55-9Related news

Ion beam synthesis and characterization of YTTRIUM SILICIDE (cas 12067-55-9) in Si(111)08/03/2019

Thin YSi2−x layers are formed by 195 keV Y ion implantation in Si(111) substrates to a dose of 2 × 1017 Y+/cm2 at 500 °C followed by annealing in nitrogen atmosphere at different temperatures for 1 h. The investigation of the phase composition is carried out by Rutherford backscattering spectr...detailed

Following the oxidation of YTTRIUM SILICIDE (cas 12067-55-9) epitaxially grown on Si(1 1 1) by core level photoemission spectroscopy07/31/2019

We have identified, by means of synchrotron radiation X-ray photoemission spectroscopy, several core-level shifted components in the Si-2p photoemission core level peak from a thin yttrium silicide layer epitaxially grown on a Si(1 1 1) surface. We have unequivocally assigned these components to...detailed

YTTRIUM SILICIDE (cas 12067-55-9) films into Si(111) — Fabrication and properties07/29/2019

The formation of a thin layer of hexagonal Y Si2−x phase on a single-crystal Si(111) substrate by implantation of 195 keV Y ions with a dose of 5×1016Y +/cm2 at room temperature (RT) is investigated. The structural characterization of the as-implanted and annealed samples is performed using Rut...detailed

YTTRIUM SILICIDE (cas 12067-55-9) formation and its contact properties on Si(1 0 0)07/28/2019

Yttrium silicide formation and its contact properties on Si(1 0 0) have been studied in this paper. By evaporating a yttrium metal layer onto Si(1 0 0) wafer in conventional vacuum condition and rapid thermal annealing, we found that YSi2–x begins to form at 350 °C, and is stable to 950 °C. A...detailed

12067-55-9Relevant articles and documents

A medium-energy ion scattering investigation of the structure and surface vibrations of two-dimensional YSi2 grown on Si(1 1 1)

Wood,Bonet,Noakes,Bailey,Tear

, p. 120 - 127 (2005)

Medium-energy ion scattering has been used to determine the atomic structure of two-dimensional yttrium silicide on silicon (1 1 1). A full quantitative analysis of the atomic positions of the Si atoms in the top bilayer yields a model similar to that previously suggested in the literature with a Si1-Si2 vertical spacing of 0.80 ± 0.03 A?, but with the Si bilayer relaxed slightly further away from the Y layer (Si2-Y vertical spacing of 1.89 ± 0.02 A?). Observing the effects of the top bilayer vibrations yields a model with significant enhancements.

Thermoelectric Properties of Bulk Yttrium Silicide (YSi2) Fabricated by Arc Melting and Spark Plasma Sintering

Wongprakarn, Suphagrid,Pinitsoontorn, Supree,Tanusilp, Sora-At,Kurosaki, Ken

, (2018)

Yttrium silicide (YSi2) nanoparticles in SiGe are reported to enhance the thermoelectric figure-of-merit (ZT) to the recorded value (≈1.81). However, the thermoelectric properties of bulk YSi2 has never been reported. In this work, the thermoelectric properties of YSi2 is studied for the first time. The bulk YSi2 is fabricated by arc melting highly pure Si and Y raw materials. The ingot is crushed to powder and compacted to form a highly dense pellet by spark plasma sintering. By optimizing the processing parameters, the single phase with the AlB2-type structure (P6/mmm) is formed. The Hall measurements show that YSi2 exhibit a metallic-like behavior with a very high electron concentration. This result in the thermoelectric properties with a very large electrical conductivity (≈18 × 105 Ω?1 m?1) but a small Seebeck coefficient (?26 μV K?1) at room temperature, and decrease with temperature. The thermal conductivity is around 14–19 W m?1 K?1 for all temperature range. The maximum ZT value is 0.026 at 423 K.

Dumbbells of five-connected silicon atoms and superconductivity in the binary silicides MSi3 (M = Ca, Y, Lu)

Schwarz, Ulrich,Wosylus, Aron,Rosner, Helge,Schnelle, Walter,Ormeci, Alim,Meier, Katrin,Baranov, Alexey,Nicklas, Michael,Leipe, Susann,Mueller, Carola J.,Grin, Yuri

, p. 13558 - 13561 (2012/10/08)

The new metastable binary silicides MSi3 (M = Ca, Y, Lu) have been synthesized by high-pressure, high-temperature reactions at pressures between 12(2) and 15(2) GPa and temperatures from 900(100) to 1400(150) K. The atomic patterns comprise int

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