13598-41-9Relevant articles and documents
Zmbov, K. F.,Margrave, J. L.
, p. 59 - 63 (1967)
Acid Solvolysis Kinetics of Lanthanide Porphyrins
Haye, Shirleyanne,Hambright, Peter
, p. 666 - 668 (1988)
The kinetics of the acid solvolysis reactions of twelve water-soluble lanthanide tetrakis(N-methyl-4-pyridyl)porphyrins (Ln-P) follow rate = k1+>2/ (k-1/k2) + +>> at 25 deg C, I = 0.8M (LiNO3/HNO3) indicating that two protons are required for solvolysis, and since log (k1k2/k-1) = 45.0R0 - 39.4 (R0 is the ionic radius in Angstroem), a 0.1 Angstroem change in radius has a 32000 fold rate effect.
Liquid-liquid solvent extraction of rare earths from chloride medium with sec-nonylphenoxy acetic acid and its mixtures with neutral organophosphorus extractants
Xiao, Pengfei,Bao, Changli,Song, Naizhong,Li, Cui,Jia, Qiong
, p. 1157 - 1161 (2011)
In the present study, sec-nonylphenoxy acetic acid (CA100) and its mixtures with four neutral organophosphorus extractants, tri-butyl-phosphate (TBP), 2-ethylhexyl phosphonic acid di-2-ethyl ester (DEHEHP), Cyanex923, and Cyanex925 have been applied to the extraction of rare earths. Results show that all the four mixing systems do not have evident synergistic effects on the extraction of rare earths. The different extraction effects have been considered to the separation of rare earths. The four mixtures may be applied to the separation of yttrium from some certain lanthanoids at proper mole fractions of CA100. Pleiades Publishing, Ltd., 2011.
Synthesis, crystal and electronic structures of new narrow-band-gap semiconducting antimonide oxides RE3SbO3 and RE 8Sb3-δO8, with RE = La, Sm, Gd, and Ho
Wang, Peng,Forbes, Scott,Kolodiazhnyi, Taras,Kosuda, Kosuke,Mozharivskyj, Yurij
, p. 8795 - 8803 (2010/08/06)
In the search for high-temperature thermoelectric materials, two families of novel, narrow-band-gap semiconducting antimonide oxides with the compositions RE3SbO3 and RE8Sb3-δO 8 (RE = La, Sm, Gd, Ho) have been discovered. Their synthesis was motivated by attempts to open a band gap in the semimetallic RESb binaries through a chemical fusion of RESb and corresponding insulating RE 2O3. Temperatures of 1350 °C or higher are required to obtain these phases. Both RE3SbO3 and RE 8Sb3-δO8 adopt new monoclinic structures with the C2/m space group and feature similar REO frameworks composed of RE4O tetrahedral units. In both structures, the Sb atoms occupy the empty channels within the REO sublattice. High-purity bulk Sm and Ho samples were prepared and subjected to electrical resistivity measurements. Both the RE3SbO3 and RE8Sb 3-δO8 (RE = Sm, Ho) phases exhibit a semiconductor-type electrical behavior. While a small band gap in RE 3SbO3 results from the separation of the valence and conduction bands, a band gap in RE8Sb3-δO 8 appears to result from the Anderson localization of electrons. The relationship among the composition, crystal structures, and electrical resistivity is analyzed using electronic structure calculations.
