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12033-60-2

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12033-60-2 Usage

General Description

Silicon nitride is a chemical compound with the formula Si3N4, consisting of silicon and nitrogen atoms. It is a non-oxide ceramic material with a high melting point and excellent mechanical and thermal properties, making it a desirable material for various industrial and engineering applications. Silicon nitride is known for its high strength, hardness, and resistance to wear and corrosion, as well as its ability to maintain these properties at high temperatures. It is widely used in the production of cutting tools, bearings, and high-temperature components in automotive, aerospace, and manufacturing industries. Additionally, silicon nitride has biomedical applications due to its biocompatibility and resistance to biological degradation, making it suitable for use in dental and orthopedic implants.

Check Digit Verification of cas no

The CAS Registry Mumber 12033-60-2 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,3 and 3 respectively; the second part has 2 digits, 6 and 0 respectively.
Calculate Digit Verification of CAS Registry Number 12033-60:
(7*1)+(6*2)+(5*0)+(4*3)+(3*3)+(2*6)+(1*0)=52
52 % 10 = 2
So 12033-60-2 is a valid CAS Registry Number.

12033-60-2SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 17, 2017

Revision Date: Aug 17, 2017

1.Identification

1.1 GHS Product identifier

Product name silicon nitride

1.2 Other means of identification

Product number -
Other names -

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:12033-60-2 SDS

12033-60-2Downstream Products

12033-60-2Relevant articles and documents

HNSi; ν1 emission band by high resolution Fourier transform spectroscopy

Elhanine, M.,Farrenq, R.,Guelachvili, G.

, p. 2529 - 2531 (1991)

The emission spectrum of the fundamental vibration-rotation ν1 band (NH stretch) of iminosilicon HNSi has been observed near 2.7μm by high resolution Fourier transform spectroscopy from a mixture of N2 + SiH4 excited in a radio frequency discharge.This is the first spectroscopic observation of this molecule in the gas phase.Molecular constants ?, B, D, H are reported.Calculated microwave transitions which should be helpful for the investigation and the possible identification of HNSi in astrophysical sources are also given.

Reactions of atomic silicon and germanium with ammonia: A matrix-isolation FTIR and theoretical study

Chen, Mohua,Zheng, Aihua,Lu, Hao,Zhou, Mingfei

, p. 3077 - 3083 (2002)

The reactions of Si atoms with NH3 molecules have been studied using matrix-isolation FTIR spectroscopy and density functional theoretical calculations. Silicon atoms reacted with NH3 to form the SiNH3 complex spontaneousl

The microwave spectrum of the SiN(2Σ+) radical

Saito, Shuji,Endo, Yasuki,Hirota, Eizi

, p. 6447 - 6450 (1983)

The microwave absorption spectrum of the SiN radical has been detected in a dc glow discharge in a SiCl4 or SiH4/N2 mixture.The three rotational transitions N = 2a source-frequency modulation microwave spectrometer.The rotational constant, the centrifugal distortion constant, the spin-rotation coupling constant, and the magnetic hyperfine coupling constants b and c and the electric quadrupole coupling constant of the nitrogen nucleus have been precisely determined.The electronic structure of the SiN molecule has been briefly discussed using the magnetic hyperfine coupling constants and also the quadrupole coupling constant of 14N.

Horie, O.,Potzinger, P.,Reimann, B.

, p. 231 - 236 (1986)

Gas-Phase Chemistry of HSiS- and HSiNH-: Ions Related to Silathioformaldehyde and the Silaazomethine of Formaldehyde

Damrauer, Robert,Krempp, Michele,O'Hair, Richard A. J.

, p. 1998 - 2005 (2007/10/02)

Anions related to silathioformaldehyde (H2Si=Si) and the silaazomethine of formaldehyde (H2Si=NH) have been prepared and studied using flowing afterglow selected ion flow tube techniques.The connectivities of these anions are shown in experimental studies to be - and -.In addition, ab initio computational studies demonstrate that these are the most stable anion isomers.These anions are prepared by both collisionally-induced dissociation and direct source reactions.The anions resulting from the later preparations have been submitted to reaction chemistry studies with CO2, COS, CS2, SO2, O2, and C6F6.Comparisons with earlier studies of HSiO- are made in terms of a simple mechanistic picture.

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