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12039-79-1

12039-79-1

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12039-79-1 Usage

Chemical Properties

gray powder(s); used in the form of a 99.5%–99.95% pure material as a sputtering target in the fabrication of integrated circuits; there is also the compound Ta5Si3, 12067-56-0 [STR93] [CER91]

Uses

Tantalum disilicide is used in the preparation of ceramics, which finds application in the thermal protection systems.

Check Digit Verification of cas no

The CAS Registry Mumber 12039-79-1 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,3 and 9 respectively; the second part has 2 digits, 7 and 9 respectively.
Calculate Digit Verification of CAS Registry Number 12039-79:
(7*1)+(6*2)+(5*0)+(4*3)+(3*9)+(2*7)+(1*9)=81
81 % 10 = 1
So 12039-79-1 is a valid CAS Registry Number.
InChI:InChI=1/2H3Si.Ta/h2*1H3;/rH6Si2Ta/c1-3-2/h1-2H3

12039-79-1 Well-known Company Product Price

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  • CAS number
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  • Alfa Aesar

  • (44965)  Tantalum disilicide   

  • 12039-79-1

  • 10g

  • 546.0CNY

  • Detail

  • Alfa Aesar

  • (44965)  Tantalum disilicide   

  • 12039-79-1

  • 50g

  • 2478.0CNY

  • Detail

12039-79-1SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 17, 2017

Revision Date: Aug 17, 2017

1.Identification

1.1 GHS Product identifier

Product name Tantalum disilicide

1.2 Other means of identification

Product number -
Other names bis(λ<sup>2</sup>-silanylidene)tantalum

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:12039-79-1 SDS

12039-79-1Upstream product

12039-79-1Downstream Products

12039-79-1Related news

TANTALUM SILICIDE (cas 12039-79-1) interconnect characterization by surface analytical techniques08/04/2019

To improve the performance of VLSI circuits by reducing the parasitic series resistance of long interconnect lines, a composite structure of tantalum silicide and poly-silicon layers with a resistivity of ⪕ 5 Ω□ has been developed. The physical properties of the silicide film were characterize...detailed

Characterization of TANTALUM SILICIDE (cas 12039-79-1) contacts on GaAs08/01/2019

TaSi2GaAs diodes were studied at different rates of deposition of tantalum silicide. A minimum ideality factor of 1.03 was observed at a deposition rate of 4 Å s−1. At this rate the barrier height was determined to be 0.72 eV using the experimental value of the Richardson constant of 2 A cm−2 ...detailed

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