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12064-03-8

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12064-03-8 Usage

Description

Gallium antimonide (GaSb) is a semiconductor material with unique properties, such as a high refractive index and a tunable band gap. It is known for its cubic crystal structure and high purity, making it a valuable component in various applications across different industries.

Uses

Used in Semiconductor Industries:
Gallium antimonide is used as a key material in the semiconductor industry due to its high purity (99.99%) and desirable electronic properties, such as a band gap of 0.81 eV at 0K and 0.72 eV at 300K, and high electron and hole mobility.
Used in Infrared Applications:
Gallium antimonide is used as a component in infrared detectors, infrared LEDs, and lasers due to its ability to efficiently detect and emit infrared radiation.
Used in Thermophotovoltaic Systems:
GaSb is utilized in thermophotovoltaic systems, which convert thermal energy into electrical energy, taking advantage of its semiconductor properties and high refractive index.
Used in Photoresists and Composites:
Gallium antimonide is used as a component of photoresists and other composites where a high refractive index is desirable, contributing to the performance and efficiency of these materials.
Used in Semiconducting Devices:
GaSb is employed in the development and manufacturing of semiconducting devices, leveraging its electronic properties such as effective mass and dielectric constant, as well as its enthalpy of fusion.

Check Digit Verification of cas no

The CAS Registry Mumber 12064-03-8 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,6 and 4 respectively; the second part has 2 digits, 0 and 3 respectively.
Calculate Digit Verification of CAS Registry Number 12064-03:
(7*1)+(6*2)+(5*0)+(4*6)+(3*4)+(2*0)+(1*3)=58
58 % 10 = 8
So 12064-03-8 is a valid CAS Registry Number.
InChI:InChI=1/Ga.Sb/q+3;

12064-03-8 Well-known Company Product Price

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  • (Code)Product description
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  • Alfa Aesar

  • (12933)  Gallium antimonide, 99.99% (metals basis)   

  • 12064-03-8

  • 0.1g

  • 131.0CNY

  • Detail
  • Alfa Aesar

  • (12933)  Gallium antimonide, 99.99% (metals basis)   

  • 12064-03-8

  • 1g

  • 667.0CNY

  • Detail
  • Alfa Aesar

  • (12933)  Gallium antimonide, 99.99% (metals basis)   

  • 12064-03-8

  • 5g

  • 3007.0CNY

  • Detail
  • Aldrich

  • (651478)  Galliumantimonide  (single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm

  • 12064-03-8

  • 651478-1EA

  • 17,163.90CNY

  • Detail

12064-03-8SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 18, 2017

Revision Date: Aug 18, 2017

1.Identification

1.1 GHS Product identifier

Product name gallanylidynestibane

1.2 Other means of identification

Product number -
Other names GALLIUM ANTIMONIDE,POLYCRYST

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:12064-03-8 SDS

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12064-03-8Related news

Swift heavy silver (Ag+7) ion irradiation induced self assembled nanodots on MBE grown GALLIUM ANTIMONIDE (cas 12064-03-8) (GaSb)07/30/2019

100 MeV swift heavy silver (Ag+7) ion irradiation at normal incidence results in the formation of dense and ordered nanosized dots on molecular beam epitaxy (MBE) grown GaSb epitaxial layers. The shape, size and density of the nanodots are found to be strongly dependent on the ion fluence. Ripen...detailed

Defect reactions in GALLIUM ANTIMONIDE (cas 12064-03-8) studied by zinc and self-diffusion07/29/2019

Extrinsic diffusion of zinc (Zn) in gallium antimonide (GaSb) under Ga-rich conditions was analyzed on the basis of the kick-out and the dissociative diffusion mechanism. It is concluded that the changeover of interstitial Zn to substitutional gallium (Ga) sites is mainly mediated by Ga intersti...detailed

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