134303-33-6Relevant articles and documents
Decomposition Kinetics of a Static Direct Current Silane Glow Discharge
Longeway, P.A.,Estes, R.D.,Weakliem, H.A.
, p. 73 - 77 (1984)
We have studied the decomposition kinetics of a static de silane discharge using mass spectrometric techniques.The principal neutral products observed were hydrogen, disilane, trisilane, trace amounts of higher silanes, and nonstoichiometric silicon hydride solids.The initial rates of formation of the products and depletion of the silane were measured and found to be independent of silane pressure and had a linear dependence on the discharge current.Nitric oxide, a known free-radical scavenger, was introduced into the discharge to determine the relative yields of SiH3 and SiH2.The primary decomposition was found to proceed approximately 80-90percent to the silyl radical, SiH3.The effects of NO addition were the reduction in the formation rate of disilane and trisilane and almost total suppression of solid formation.We propose a mechanism which includes both ion and neutral radical reactions and conclude that the major decomposition processes lead to SiH3 and SiH2.Kinetic treatment of the mechanism gave values for the product yields that were in good agreement with the observed yields.
Diagnostics of the gas-phase thermal decomposition of Si2H6 using vacuum ultraviolet photoionization
Tonokura, Kenichi,Murasaki, Tetsuya,Koshi, Mitsuo
, p. 507 - 511 (2000)
Vacuum ultraviolet (VUV) photoionization at 10.2 eV was employed for the detection of gas-phase molecules formed after thermal decomposition of disilane at a total pressure of 30 Torr and in the temperature range of 298-740 K. The SinH2(n+1) (n=3-5) and SinH2n (n=2-5) species resulting from disilane pyrolysis in a flow reactor were directly observed using time-of-flight mass spectrometry. Unlike multiphoton ionization at 6.4 eV photons, no fragmentation was observed by the VUV single-photon ionization at 10.2 eV.
Role of Silylene in the Deposition of Hydrogenated Amorphous Silicon
Dietrich, Thomas R.,Chiussi, Stefano,Marek, Michael,Roth, Angelika,Comes, Franz J.
, p. 9302 - 9310 (1991)
The role of silylene in the laser deposition of hydrogenated amorphous silicon has been studied with laser-induced fluorescence and deposition rate measurements.The rate constants of the reactions of silylene and disilane and of the reverse reactions have been determined.The results show that silylene is rapidly consumed, exhibiting only a small effective lifetime.It proves that generally silyllene hardly be able to reach the surface to form amorphous silicon.The comparison of the kinetic data with the deposition rates shows that in IR laser CVD silylene starts the gas-phase chemistry and that disilene is the main film-forming molecule.The UV laser process starts with a different primary dissociation leading to silylene, which also rearranges to the film-forming disilene.
Syntheses and Molecular Structures of Liquid Pyrophoric Hydridosilanes
B?hme, Uwe,Franze, Georg,Friebel, Mike,Gerwig, Maik,Gründler, Franziska,Kroke, Edwin,Rosenkranz, Marco,Schmidt, Horst
, p. 762 - 773 (2020/08/05)
Trisilane, isotetrasilane, neopentasilane, and cyclohexasilane have been prepared in gram scale. In-situ cryo crystallization of these pyrophoric liquids in sealed capillaries on the diffractometer allows access to the single crystal structures of these c
