53744-42-6

Basic information

• Product Name: BUFFER SOLUTION
• Synonyms: 1,10-Phenanthroline,4,7-di(phenylsulfonicacid)-,disodiumsalt;4,4’-(1,10-phenanthroline-4,7-diyl)bis-benzenesulfonicacidisodiumsalt;4,7-di(4-Phenylsulfonicacid)-1,10-phenanthroline,disodiumsalt;Benzenesulfonicacid,4,4’-(1,10-phenanthroline-4,7-diyl)bis-,disodiumsalt;BATHOPHENANTHROLINEDISULFONIC ACID, DISODIUM SALT HYDRATE;BATHOPHENANTHROLINE DISULFONIC ACID NA2-SALT H20;BLUE-TEN(TM) BUFFER, PH 10.00;BLUE HIGH-ACCURACY BUFFER, PH 10.000
• CAS NO: 53744-42-6
• Molecular Formula: C₂₄H₁₄N₂O₆S₂*H₂O*2Na
• Molecular Weight: 590.53
• EINECS: 258-152-0
• Product Categories: Buffer Solutions, pH 5 - 9Biological Buffers;Phosphate Buffer Solutions;Buffer SolutionspH Buffers for Titration;Buffers A to ZpH Buffers for Titration;Buffer Concentrates (FIXANAL);Titration;Buffer Solutions, pH 10 - 13;Buffer Solutions;pH Buffers for Titration;Biological Buffers;Buffer Convenience Packaging;Buffer SolutionsBiological Buffers;Buffers A to Z;Buffer Solutions, pH 5 - 9pH Buffers for Titration
• Mol File: 53744-42-6.mol
• Article Data: 0

Chemical Properties

• Melting Point: 300 °C
• Boiling Point: °Cat760mmHg
• Flash Point: °C
• Appearance: No Color/Liquid
• Density: 1.006 g/mL at 20 °C
• Vapor Density: 4.9 (vs air)
• Storage Temp.: 2-8°C
• Solubility: H2O: soluble
• CAS DataBase Reference: BUFFER SOLUTION(CAS DataBase Reference)
• NIST Chemistry Reference: BUFFER SOLUTION(53744-42-6)
• EPA Substance Registry System: BUFFER SOLUTION(53744-42-6)

Safety Data

• Hazard Codes: Xi,C
• Statements: 36/38-36/37/38-36-52/53-35-67
• Safety Statements: 26-36-24/25-37/39-61-45-36/37/39
• RIDADR: UN2817
• WGK Germany: 3
• F: 8-10
• HazardClass: 8
• PackingGroup: III
• Hazardous Substances Data: 53744-42-6(Hazardous Substances Data)

Usage

Uses

Different sources of media describe the Uses of 53744-42-6 differently. You can refer to the following data:
1. Used for pretreatment of planar silicon devices when plating with Nickel plating solution products 44069 and 44070.
2. Use of Buffer HF improved:Buffer HF improved dissolves silica films (both thermally grown and silane SiO2) produced on the surfaces of silicon and exposed by photolithography. It also is capable of dissolving doped silica films such as phosphosilica and borosilica glasses as formed in semiconductor processing. The overall chemical reaction is: 4HF + SiO2 SiF4 + 2H2OFor trouble-free operation Buffer HF improved is recommended in the new technologies for manufacture of semiconductor planar and mesa devices. It is compatible with both negative and positive photoresists. Excellent results with good reproducibility are simple to achieve without undercutting marked oxides, surface staining or device degradation by metallic impurities.
3. Use of Buffer HF improved:Buffer HF improved dissolves silica films (both thermally grown and silane SiO2) produced on the surfaces of silicon and exposed by photolithography. It also is capable of dissolving doped silica films such as phosphosilica and borosilica glasses as formed in semiconductor processing. The overall chemical reaction is: 4HF + SiO2 SiF4 + 2H2OFor trouble-free operation Buffer HF improved is recommended in the new technologies for manufacture of semiconductor planar and mesa devices. It is compatible with both negative and positive photoresists. Excellent results with good reproducibility are simple to achieve without undercutting marked oxides, surface staining or device degradation by metallic impurities.

General Description

Improved HF Buffer System with stabilized HF activity - selective solvent for SiO2 used in semiconductor technology of planar passivated devices - transistors, integrated circuits, diodes, rectifiers, SCR, MOS, FETAdvantages:Ready-to-use - EconomicalHF activity buffer stabilizedExcellent process reproducibilityDoes not undercut masked oxideWill not stain diffused silicon surfacesAvoids contamination on silicon surfacesPhotoresist coating unaffectedBuffer HF improved is an idealized buffer preparation characterized by a high buffer index and an optimized, uniform oxide-etch rate. The composition of buffer HF improved is precisely controlled by HF activity measurements and electrometric pH. The mass balance corresponds essentially to (HF) + (F) + 2(HF2) for a two-ligand mononuclear complex and the charge balance is (H+) - (F) + (HF2- ). The HF activity is maintained constant through the specific equilibrium constant which regulates the equilibrium reaction between fluoride, bifluoride, and HF buffer components. A second equilibrium constant participates in the regulation of the hydronium in concentration of pH.Buffer HF improved is produced and analyzed to be essentially free of impurities. Nitrate ions, a common impurity causing stains on diffused silicon surfaces, are specifically removed. Heavy metal impurities, which can lead to degradation of device characteristics, are rigidly controlled under manufacturing process specifications.