583050-70-8 Usage
Description
[1]Benzothieno[3,2-b][1]benzothiophene, 2,7-dioctylis a heterocyclic organic compound with a unique molecular structure that features a benzothieno backbone fused with a benzene ring. The presence of two octyl chains at the 2,7-positions provides enhanced solubility and processability, making it a promising candidate for various electronic applications.
Uses
Used in Organic Field-Effect Transistors (OFETs) Industry:
[1]Benzothieno[3,2-b][1]benzothiophene, 2,7-dioctylis used as a semiconductor material for high-performance OFETs due to its high field-effect mobility of 5.5-5.7 cm2/Vs and high On/Off ratio of 10^9. Its solution-processability with a solubility of 80 mg/mL allows for the fabrication of OFETs through cost-effective and scalable solution-based techniques, making it suitable for large-area and flexible electronics applications.
Check Digit Verification of cas no
The CAS Registry Mumber 583050-70-8 includes 9 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 6 digits, 5,8,3,0,5 and 0 respectively; the second part has 2 digits, 7 and 0 respectively.
Calculate Digit Verification of CAS Registry Number 583050-70:
(8*5)+(7*8)+(6*3)+(5*0)+(4*5)+(3*0)+(2*7)+(1*0)=148
148 % 10 = 8
So 583050-70-8 is a valid CAS Registry Number.
583050-70-8Relevant articles and documents
Highly soluble [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives for high-performance, solution-processed organic field-effect transistors
Ebata, Hideaki,Izawa, Takafumi,Miyazaki, Eigo,Takimiya, Kazuo,Ikeda, Masaaki,Kuwabara, Hirokazu,Yui, Tatsuto
, p. 15732 - 15733 (2007)
2,7-Dialkyl[1]benzothieno[3,2-b]benzothiophenes were tested as solution-processible molecular semiconductors. Thin films of the organic semiconductors deposited on Si/SiO2 substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility higher than 1.0 cm2 V-1 s-1 and Ion/Ioff of ~107. Copyright
Field-effect transistor
-
Paragraph 0059, (2013/06/28)
Disclosed is a field-effect transistor characterized by using a compound represented by the formula (1) below as a semiconductor material. (In the formula (1), X 1 and X 2 independently represent a sulfur atom, a selenium atom or a tellurium atom; and R 1 and R 2 independently represent an unsubstituted or halogeno-substituted C 1 -C 36 aliphatic hydrocarbon group.)