935280-42-5

Basic information

• Product Name: Dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene
• Synonyms: Dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene;Naphtho[2,3-b]naphtho[2′,3′:4,5]thieno[2,3-d]thiophene;Dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene sublimed grade, 99%
• CAS NO: 935280-42-5
• Molecular Formula: C22H12S2
• Molecular Weight: 340.46068
• Mol File: 935280-42-5.mol
• Article Data: 6

Chemical Properties

• Melting Point: 425-430°C
• Boiling Point: 602.9±28.0 °C(Predicted)
• Appearance: /
• Density: 1.424±0.06 g/cm3(Predicted)
• CAS DataBase Reference: Dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene(CAS DataBase Reference)
• NIST Chemistry Reference: Dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene(935280-42-5)
• EPA Substance Registry System: Dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene(935280-42-5)

Safety Data

• Hazard Codes: Xn
• Statements: 22-36
• Safety Statements: 26
• WGK Germany: 3
• Hazardous Substances Data: 935280-42-5(Hazardous Substances Data)

Usage

Uses

It is mainly used as an organic semiconductor in the fabrication of organic field effect transistors (OFETs) for a variety of applications such as implantable electronics, large-area sensitive catheters, and light emitting diodes (LEDs).

General Description

Dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) is a semiconducting polymer that has π-extended heteroarenes with six fused aromatic rings. It is a thermally stable crystal that has a hole mobility of 1 cm2V-1s-1 which can be used for a majority of electronic applications.

Upstream product

• 80228-36-0 3-chloronaphthalene-2-carbaldehyde 
• 116130-48-4 2-hydroxy-3-(methylthio)naphthalene 
• 93-04-9 2-Methoxynaphthalene 
• 1310197-64-8 2-methoxy-3-(methylthio)naphthalene 
• 1310197-69-3 3-(methylthio)-2,3-dihydronaphthalen-2-yl trifluoromethanesulfonate 
• 1089663-80-8 C₂₂H₁₆O₂S₂ 
• 66-99-9 β-naphthaldehyde 
• 364064-72-2 3‐(methylthio)‐2‐naphthaldehyde 

Downstream Products

• 1269669-42-2 C₃₂H₁₉NO₂S₂ 
• 1269669-42-2 C₃₂H₁₉NO₂S₂ 

Relevant articles and documents

Facile synthesis of highly π-extended heteroarenes, dinaphtho[2,3-b: 2′,3′-f]chalcogenopheno[3,2-b]chalcogenophenes, and their application to field-effect transistors

A facile three-step synthetic procedure for highly π-extended heteroarenes, dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) and dinaphtho[2,3-b:2′,3′-f]selenopheno[3,2-b]selenophene (DNSS), was established. Solution UV-vis spectra and electrochemistry indicated that they have relatively low-lying HOMO levels and large HOMO-LUMO energy gaps. OFET devices fabricated with evaporated thin-films of DNTT and DNSS showed excellent FET characteristics in air, and the highest field-effect mobility of DNTT- and DNSS-based OFETs is 2.9 and 1.9 cm2 V-1 s-1, respectively. Copyright

METHOD FOR PRODUCING THIOPHENE COMPOUND

PROBLEM TO BE SOLVED: To provide a method for producing a thiophene compound. SOLUTION: A method for producing a compound represented by a general formula (1) comprises heat treatment of a compound represented by a general formula (2). [In the formula, X

NOVEL FUSED-RING AROMATIC COMPOUND, PROCESS FOR PRODUCING THE SAME, AND USE THEREOF

A novel fused polycyclic aromatic compound of the present invention is (a) a compound including: a benzodichalcogenophenobenzodichalcogenophene (BXBX) skeleton further having an aromatic ring(s) located outside the BXBX skeleton, or (b) a compound including a BXBX skeleton in which a benzene ring is substituted with a heterocyclic ring. The compound can strengthen intermolecular interaction due to greater π electron orbits. This improves an electron field effect mobility of an organic semiconductor device that is manufactured by use of the compound as an organic semiconductor material. Further, since the number of fused rings included in the compound is small, the compound does not cause problems that generally occur in compounds having an extremely large number of fused rings, i.e., poor solubility in solvent and poor atmospheric stability due to high affinity to oxygen. As a result, the fused polycyclic aromatic compound of the present invention can be preferably used as an organic semiconductor material.