YTTRIUM SILICIDE (cas 12067-55-9) formation and its contact properties on Si(1 0 0)

Add time:07/28/2019    Source:sciencedirect.com

YTTRIUM SILICIDE (cas 12067-55-9) formation and its contact properties on Si(1 0 0) have been studied in this paper. By evaporating a yttrium metal layer onto Si(1 0 0) wafer in conventional vacuum condition and rapid thermal annealing, we found that YSi2–x begins to form at 350 °C, and is stable to 950 °C. Atomic force microscopy characterization shows the pinholes formation in the formed YSi2–x film. By current–voltage measurement, the Schottky barrier height (SBH) of YSi2–x diode on p-type Si(1 0 0) was shown to be between 0.63 and 0.69 eV for annealing temperature from 500 to 900 °C. By low temperature current–voltage measurement, the SBH of YSi2–x diode on n-type Si(1 0 0) was directly measured and shown to be 0.46, 0.37, 0.32 eV for annealing temperature of 500, 600, and 900 °C, respectively, and possibly even lower for annealing at 700 or 800 °C.

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