12031-53-7

Basic information

• Product Name: LANTHANUM(III) TELLURIDE
• Synonyms: LANTHANUM TELLURIDE;LANTHANUM(III) TELLURIDE;dilanthanum tritelluride;Lanthanium telluride;Lanthanum (III) telluride, 99.9% (REO)
• CAS NO: 12031-53-7
• Molecular Formula: La2Te3
• Molecular Weight: 660.61
• EINECS: 234-754-9
• Mol File: 12031-53-7.mol

Chemical Properties

• Appearance: /
• CAS DataBase Reference: LANTHANUM(III) TELLURIDE(CAS DataBase Reference)
• NIST Chemistry Reference: LANTHANUM(III) TELLURIDE(12031-53-7)
• EPA Substance Registry System: LANTHANUM(III) TELLURIDE(12031-53-7)

Safety Data

• Hazardous Substances Data: 12031-53-7(Hazardous Substances Data)

Usage

Uses

Used in Electronic and Semiconductor Industry:
Lanthanum(III) telluride is used as a component in thin film transistors and optoelectronic devices due to its unique electrical and thermal properties, contributing to the performance and efficiency of these devices.
Used in Solar Cell Industry:
Lanthanum(III) telluride has potential applications in solar cells, where its properties can enhance the conversion of sunlight into electricity, improving the overall efficiency of solar energy systems.
Used in Infrared Detector Industry:
LANTHANUM(III) TELLURIDE is utilized in the development of infrared detectors, where its unique properties allow for the detection of infrared radiation, which has applications in various fields such as military, security, and environmental monitoring.
Used in Thermoelectric Device Industry:
Lanthanum(III) telluride is employed in thermoelectric devices, where it can convert temperature differences into electrical energy, making it a promising material for energy harvesting and temperature management applications.
It is crucial to handle and store Lanthanum(III) telluride with caution due to its toxicity and potential environmental hazards. Proper safety measures should be taken to minimize risks associated with its use.

InChI:InChI=1/2La.3Te/q2*+3;3*-2

Upstream product

• 7439-91-0 lanthanum 
• 7439-96-5 manganese 
• 14683-12-6 tellurium 
• 7440-39-3 barium 

Relevant articles and documents

Ba2Ln1-xMn2Te5(Ln = Pr, Gd, and Yb; X = Ln vacancy): Syntheses, crystal structures, optical, resistivity, and electronic structure

Three new isostructural quaternary tellurides, Ba2Ln1-xMn2Te5 (Ln = Pr, Gd, and Yb), have been synthesized by the molten-flux method at 1273 K. The single-crystal X-ray diffraction studies at 298(2) K showed that Ba2Ln1-xMn2Te5 crystallize in the space group -C2/m of the monoclinic crystal system. There are six unique crystallographic sites in this structure's asymmetric unit: one Ba site, one Ln site, one Mn site, and three Te sites. The Ln site in the Ba2Ln1-xMn2Te5 structure is partially filled, which leaves about one-third of the Ln sites vacant (□) for Pr and Gd compounds. These structures do not contain any homoatomic or metallic bonding and can be charge-balanced as (Ba2+)2(Gd/Pr3+)2/3(Mn2+)2(Te2-)5. The refined composition for the Yb compound is Ba2Yb0.74(1)Mn2Te5 and can be charge-balanced with a mixed valence state of Yb2+/Yb3+. The crystal structures of Ba2Ln1-xMn2Te5 consist of complex layers of 2∞[Ln1-xMn2Te5]4- stacked along the [100] direction, with Ba2+ cations separating these layers. The Ln atoms are bound to six Te atoms that form a distorted octahedral geometry around the central Ln atom. Each Mn atom in this structure is coordinated to four Te atoms in a distorted tetrahedral fashion. These LnTe6 and MnTe4 units are the main building blocks of the Ba2Ln1-xMn2Te5 structure. The optical absorption study performed on a polycrystalline Ba2Gd2/3Mn2Te5 sample reveals a direct bandgap of 1.06(2) eV consistent with the DFT study. A semiconducting behavior was also observed for polycrystalline Ba2Gd2/3Mn2Te5 from the resistivity study. The temperature-dependent magnetic studies on a polycrystalline sample of Ba2Gd2/3Mn2Te5 did not reveal any long-range magnetic order down to 5 K. The effective magnetic moment (μeff) of 10.37μB calculated using the Curie-Weiss law is in good agreement with the theoretical value (μcal) of 10.58μB.

Study of the magnetic properties of the La1-xGdxTe solid solution

We present a study of the physical properties of the La1-xGdxTe solid solution. Although both LaTe and GdTe crystallize in the fcc structure and are metallic, two domains in the x-dependence of the lattice parameters of their solid solution can be distinguished. At the critical concentration, no anomalies in the magnetic susceptibility or the electrical resistivity can be detected. Both the Neel and paramagnetic Curie temperatures are linearly x-dependent, at xGREQ0.5, with opposite slopes. The results are discussed within a molecular field treatment of the RKKY exchange interaction in which the disorder generated by spin dilution is averaged out.