12038-64-1Relevant articles and documents
N2 Electroreduction to NH3 by Selenium Vacancy-Rich ReSe2 Catalysis at an Abrupt Interface
He, Guanjie,Hofkens, Johan,Huang, Haowei,Lai, Feili,Liu, Tianxi,Martens, Johan A.,Parkin, Ivan P.,Rao, Dewei,Weng, Bo,Xu, Yang,Zong, Wei
, p. 13320 - 13327 (2020)
Vacancy engineering has been proved repeatedly as an adoptable strategy to boost electrocatalysis, while its poor selectivity restricts the usage in nitrogen reduction reaction (NRR) as overwhelming competition from hydrogen evolution reaction (HER). Revealed by density functional theory calculations, the selenium vacancy in ReSe2 crystal can enhance its electroactivity for both NRR and HER by shifting the d-band from ?4.42 to ?4.19 eV. To restrict the HER, we report a novel method by burying selenium vacancy-rich ReSe2&at;carbonized bacterial cellulose (Vr-ReSe2&at;CBC) nanofibers between two CBC layers, leading to boosted Faradaic efficiency of 42.5 percent and ammonia yield of 28.3 μg h?1 cm?2 at a potential of ?0.25 V on an abrupt interface. As demonstrated by the nitrogen bubble adhesive force, superhydrophilic measurements, and COMSOL Multiphysics simulations, the hydrophobic and porous CBC layers can keep the internal Vr-ReSe2&at;CBC nanofibers away from water coverage, leaving more unoccupied active sites for the N2 reduction (especially for the potential determining step of proton-electron coupling and transferring processes as *NN → *NNH).
Growth of Transition-Metal Dichalcogenides by Solvent Evaporation Technique
Abdel-Hafiez, Mahmoud,Chareev, Dmitriy A.,Evstigneeva, Polina,Man, Gabriel J.,Phuyal, Dibya,Rensmo, H?kan,Vasiliev, Alexander N.
, p. 6930 - 6938 (2020)
Due to their physical properties and potential applications in energy conversion and storage, transition-metal dichalcogenides (TMDs) have garnered substantial interest in recent years. Among this class of materials, TMDs based on molybdenum, tungsten, sulfur, and selenium are particularly attractive due to their semiconducting properties and the availability of bottom-up synthesis techniques. Here we report a method which yields high-quality crystals of transition-metal diselenide and ditelluride compounds (PtTe2, PdTe2, NiTe2, TaTe2, TiTe2, RuTe2, PtSe2, PdSe2, NbSe2, TiSe2, VSe2, ReSe2) from their solid solutions, via vapor deposition from a metal-saturated chalcogen melt. Additionally, we show the synthesis of rare-earth-metal polychalcogenides and NbS2 crystals using the aforementioned process. Most of the crystals obtained have a layered CdI2 structure. We have investigated the physical properties of selected crystals and compared them to state of the art findings reported in the literature. Remarkably, the charge density wave transition in 1T-TiSe2 and 2H-NbSe2 crystals is well-defined at TCDW ≈ 200 and 33 K, respectively. Angle-resolved photoelectron spectroscopy and electron diffraction are used to directly access the electronic and crystal structures of PtTe2 single crystals and yield state of the art measurements.
Electrical anisotropy of W-doped ReSe2 crystals
Hu,Liang,Tiong,Huang,Lee
, p. J100-J102 (2006)
Single crystals of W-doped Re Se2 have been grown by chemical vapor transport process with bromine as the transporting agent. Single crystalline platelets up to 3×3 mm surface area and 100 μm in thickness were obtained. From the X-ray diffraction patterns
Synthesis, Structure, and Spectroscopic Study of Redox-Active Heterometallic Cluster-Based Complexes [Re5MoSe8(CN)6]n
Cordier, Stéphane,Dorcet, Vincent,Loginov, Ivan P.,Muravieva, Viktoria K.,Nadolinny, Vladimir A.,Naumov, Nikolay G.,Ryzhikov, Maxim R.,Sukhikh, Taisiya S.,Yanshole, Vadim V.
, p. 8838 - 8850 (2021)
The heterometallic cluster-based compound K5[Re5MoSe8(CN)6] was obtained by high-temperature reaction from a mixture of ReSe2 and MoSe2 in molten potassium cyanide. The redox behavior of the [Re5MoSe8(CN)6]5- cluster anion was studied by cyclic voltammetry in aqueous and organic media showing two reversible one-electron-redox transitions with E1/2 of -0.462 and 0.357 V versus Ag/AgCl in CH3CN. Aqueous media potentials were found to be noticeably shifted to higher values because of solvation. Chemically accessible potentials allowed us to structurally isolate and characterize the [Re5MoSe8(CN)6]n (n = 3-, 4-, and 5-) cluster complex in several charge states with corresponding cluster skeletal electron (CSE) numbers ranging from 24 to 22. The electronic absorption of the [Re5MoSe8(CN)6]n cluster complex varies significantly upon a change of the CSE number, especially in the visible and near-IR regions. The local cluster core distortion upon electron removal was confirmed by density functional theory calculation, while the overall geometry of the cluster anion remained practically unaltered.
Photoluminescent Re6Q8I2(Q = S, Se) Semiconducting Cluster Compounds
Laing, Craig C.,Shen, Jiahong,Chica, Daniel G.,Cuthriell, Shelby A.,Schaller, Richard D.,Wolverton, Chris,Kanatzidis, Mercouri G.
, p. 5780 - 5789 (2021/08/01)
We report three new rhenium chalcohalide cluster compounds, Re6S8I2, Re6S4Se4I2, and Re6Se8I2. The materials crystallize in the three-dimensional (3D) Re6S8Cl2 structure type with the space group P21/n. They can be synthesized with sufficiently large iodi
Preparation of 1T′-Phase ReS2 xSe2(1- x) (x = 0-1) Nanodots for Highly Efficient Electrocatalytic Hydrogen Evolution Reaction
Lai, Zhuangchai,Chaturvedi, Apoorva,Wang, Yun,Tran, Thu Ha,Liu, Xiaozhi,Tan, Chaoliang,Luo, Zhimin,Chen, Bo,Huang, Ying,Nam, Gwang-Hyeon,Zhang, Zhicheng,Chen, Ye,Hu, Zhaoning,Li, Bing,Xi, Shibo,Zhang, Qinghua,Zong, Yun,Gu, Lin,Kloc, Christian,Du, Yonghua,Zhang, Hua
supporting information, p. 8563 - 8568 (2018/06/13)
As a source of clean energy, a reliable hydrogen evolution reaction (HER) requires robust and highly efficient catalysts. Here, by combining chemical vapor transport and Li-intercalation, we have prepared a series of 1T′-phase ReS2xSe2(1-x) (x = 0-1) nanodots to achieve high-performance HER in acid medium. Among them, the 1T′-phase ReSSe nanodot exhibits the highest hydrogen evolution activity, with a Tafel slope of 50.1 mV dec-1 and a low overpotential of 84 mV at current density of 10 mA cm-2. The excellent hydrogen evolution activity is attributed to the optimal hydrogen absorption energy of the active site induced by the asymmetric S vacancy in the highly asymmetric 1T′ crystal structure.
Mixed-metal clusters with a {Re3Mo3Se8} core: From a polymeric solid to soluble species with multiple redox transitions
Muravieva, Viktoria K.,Gayfulin, Yakov M.,Ryzhikov, Maxim R.,Novozhilov, Igor N.,Samsonenko, Denis G.,Piryazev, Dmitry A.,Yanshole, Vadim V.,Naumov, Nikolay G.
, p. 3366 - 3377 (2018/03/21)
Cluster compounds based on a new {Re3Mo3Se8}n core were obtained and studied. The polymeric solid K6[Re3Mo3Se8(CN)4(CN)2/2] (1) containing 24 cluster valence electrons (CVE) was isolated as a result of high-temperature reaction. Water-soluble salts K5[Re3Mo3Se8(CN)6]·11H2O (2) and Cs5[Re3Mo3Se8(CN)6]·H2O (3) were prepared from compound 1. Crystal structures of the diamagnetic compounds 2 and 3 contain a cluster anion [Re3Mo3Se8(CN)6]5- with a 22-electronic core {Re3Mo3Se8}+. Metathesis reaction followed by recrystallization from CH3CN yielded paramagnetic salt (Ph4P)4[Re3Mo3Se8(CN)6]·2CH3CN (4) containing the {Re3Mo3Se8}2+ core with 21 CVE. Cyclic voltammetry of the solution of 4 displayed three quasi-reversible waves with E1/2 = -0.325, -0.818 and -1.410 V vs. Ag/AgCl electrode indicating the presence of [Re3Mo3Se8(CN)6]4-/5-/6-/7- transitions. Electronic structure calculations showed that both mer- and fac-isomers of [Re3Mo3Se8(CN)6]n- clusters undergo great distortion when the number of CVE decreases.
Synthesis and Characterization of ReS2 and ReSe2 Layered Chalcogenide Single Crystals
Jariwala, Bhakti,Voiry, Damien,Jindal, Apoorv,Chalke, Bhagyashree A.,Bapat, Rudheer,Thamizhavel, Arumugam,Chhowalla, Manish,Deshmukh, Mandar,Bhattacharya, Arnab
, p. 3352 - 3359 (2016/06/13)
We report the synthesis of high-quality single crystals of ReS2 and ReSe2 transition metal dichalcogenides using a modified Bridgman method that avoids the use of a halogen transport agent. Comprehensive structural characterization using X-ray diffraction and electron microscopy confirm a distorted triclinic 1T′ structure for both crystals and reveal a lack of Bernal stacking in ReS2. Photoluminescence (PL) measurements on ReS2 show a layer-independent bandgap of 1.51 eV, with increased PL intensity from thicker flakes, confirming interlayer coupling to be negligible in this material. For ReSe2, the bandgap is weakly layer-dependent and decreases from 1.31 eV for thin layers to 1.29 eV in thick flakes. Both chalcogenides show feature-rich Raman spectra whose excitation energy dependence was studied. The lower background doping inherent to our crystal growth process results in high field-effect mobility values of 79 and 0.8 cm2/(V s) for ReS2 and ReSe2, respectively, as extracted from FET structures fabricated from exfoliated flakes. Our work shows ReX2 chalcogenides to be promising 2D materials candidates, especially for optoelectronic devices, without the requirement of having monolayer thin flakes to achieve a direct bandgap.
Electronic structure of ReS2 and ReSe2 from first-principles calculations, photoelectron spectroscopy, and electrolyte electroreflectance
Ho,Huang,Chen,Dann,Tiong
, p. 15766 - 15771 (2008/10/09)
The electronic structures of ReS2 and ReSe2 single crystals are investigated using a first-principles density-of-states (DOS) calculation, ultraviolet photoelectron spectroscopy (UPS), and electrolyte electroreflectance (EER). The total and partial DOS were calculated by the full-potential linearized-augmented-plane-wave method. From the calculations, the main contribution near the band edge of Re X2 (X=S,Se) is determined to be dominated by the nonbonding Re d orbitals. The valence-band DOS is experimentally verified by the UPS measurements. EER measurements were performed in the energy range of 1.3-6 eV. The EER spectra exhibit sharp derivativelike structures in the vicinity of the band-edge excitonic transitions as well as higher-lying interband transitions. Transition energies are determined accurately. From the experimental and the theoretically calculated results, probable energy-band structures of ReS2 and ReSe2 are constructed. 1999 The American Physical Society.
Absorption-edge anisotropy in ReS2 and ReSe2 layered semiconductors
Ho,Huang,Tiong,Liao
, p. 16130 - 16135 (2008/10/09)
Polarization-dependent absorption measurements of ReS2 and ReSe2 single crystals have been carried out in the temperature range between 25 and 500 K. A significant shift towards lower energies has been observed in the transmittance spectra of E∥b polarization with respect to those corresponding to E⊥ b polarization. Analysis reveals that the absorption edges of ReS2 and ReSe2 are indirect allowed transitions. The parameters that describe the temperature dependence of the absorption edges with different polarizations in the van der Waals plane are evaluated. The results indicate that the electron-phonon coupling constants for E∥b polarization are considerably larger than those of E⊥ b polarization.
