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Vanadium Silicide, also known as Vanadium Disilicide, is a refractory compound with the chemical formula V3Si. It is a metallic prism that exists in a -325 mesh form and is available as a 99.5% pure material. Vanadium Silicide is known for its high melting point, good thermal stability, and excellent electrical conductivity.

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  • 12039-87-1 Structure
  • Basic information

    1. Product Name: VANADIUM SILICIDE
    2. Synonyms: VANADIUM DISILICIDE;VANADIUM SILICIDE;Vanadiumsilicidemesh;VANADIUM SILICIDE -325 MESH;VANADIUM SILICIDE, 99.5% (METALS BASIS);VANADIUM SILICIDE: 99.5%, -325 MESH;bis(λ2-silanylidene)vanadium
    3. CAS NO:12039-87-1
    4. Molecular Formula: Si2V
    5. Molecular Weight: 107.11
    6. EINECS: 234-908-5
    7. Product Categories: N/A
    8. Mol File: 12039-87-1.mol
  • Chemical Properties

    1. Melting Point: 1677 °C
    2. Boiling Point: °Cat760mmHg
    3. Flash Point: °C
    4. Appearance: /metallic prisms
    5. Density: 4.420
    6. Refractive Index: N/A
    7. Storage Temp.: N/A
    8. Solubility: N/A
    9. Water Solubility: soluble HF [KIR83]
    10. CAS DataBase Reference: VANADIUM SILICIDE(CAS DataBase Reference)
    11. NIST Chemistry Reference: VANADIUM SILICIDE(12039-87-1)
    12. EPA Substance Registry System: VANADIUM SILICIDE(12039-87-1)
  • Safety Data

    1. Hazard Codes: Xi
    2. Statements: 36/37
    3. Safety Statements: 26-36
    4. WGK Germany: 3
    5. RTECS:
    6. TSCA: Yes
    7. HazardClass: 6.1
    8. PackingGroup: N/A
    9. Hazardous Substances Data: 12039-87-1(Hazardous Substances Data)

12039-87-1 Usage

Uses

Used in Electronics Industry:
Vanadium Silicide is used as a sputtering target for the fabrication of integrated circuits. Its high melting point and good thermal stability make it an ideal material for this application, ensuring a consistent and reliable process during the manufacturing of electronic components.
Used in Electrochemical Industry:
Vanadium Silicide is used as an electrochemical cathode. Its excellent electrical conductivity and stability in various environments contribute to its effectiveness in this application, enhancing the performance and efficiency of electrochemical systems.

Check Digit Verification of cas no

The CAS Registry Mumber 12039-87-1 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,3 and 9 respectively; the second part has 2 digits, 8 and 7 respectively.
Calculate Digit Verification of CAS Registry Number 12039-87:
(7*1)+(6*2)+(5*0)+(4*3)+(3*9)+(2*8)+(1*7)=81
81 % 10 = 1
So 12039-87-1 is a valid CAS Registry Number.
InChI:InChI=1/2H3Si.V/h2*1H3;/rH6Si2V/c1-3-2/h1-2H3

12039-87-1SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 17, 2017

Revision Date: Aug 17, 2017

1.Identification

1.1 GHS Product identifier

Product name bis(λ<sup>2</sup>-silanylidene)vanadium

1.2 Other means of identification

Product number -
Other names Vanadium silicide (VSi2)

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:12039-87-1 SDS

12039-87-1Downstream Products

12039-87-1Relevant articles and documents

Field activated combustion synthesis of the silicides of vanadium

Maglia,Anselmi-Tamburini,Milanese,Bertolino,Munir

, p. 108 - 118 (2001)

The synthesis of vanadium silicides was investigated using the field-activated combustion synthesis technique. For all V-Si compounds, self-sustaining combustion reactions could be obtained when fields above a threshold value were imposed. Monophasic products were obtained only for the starting compositions V:Si=1:2 and V:Si=5:3. For all other compositions the reaction produced a polyphasic mixture. No significant variation of phase composition was observed with an increase in field strength. In contrast with other systems, the field was seen to have a weak effect on the combustion macrokinetic parameters. This was interpreted on the basis of the large electrical conductivity of the reaction products, driving a large part of the electric flux away from the reaction front. The reaction mechanism was investigated through the use of quenching experiments. Only the VSi2 and V5Si3 phases were observed in the leading edge of the combustion front, with the other phases forming from solid-solid interactions in the afterburn. These results have been compared with observations relative to the mechanism of silicides formation in isothermal solid-solid and solid-liquid diffusion couples.

Phase equilibria in the Dy-V-Si system at 1200 K

Morozkin

, p. L4-L6 (2002)

Phase equilibria in the Dy-V-Si system were investigated by X-ray powder diffraction and metallographic analysis. The isothermal cross-section at 1200 K was obtained. It is obvious that the AlB2-type (space group P6/mmm, no. 191) DyV0.1Si1.9 compound [a=0.3817(1) nm, c=0.4114(1) nm] belongs to the extended region of an AlB2-type DySi1.56-based solid solution.

Synthesis and thermal stability of nano-crystalline vanadium disilicide

Ma, Jianhua,Gu, Yunle,Shi, Liang,Chen, Luyang,Yang, Zeheng,Qian, Yitai

, p. 281 - 284 (2004)

Nano-crystalline vanadium disilicide was successfully synthesized using vanadium tetrachloride and silicon as starting materials via reduction-silication route at 650°C in the molten salt solution of magnesium chloride and sodium chloride in an autoclave. X-ray powder diffraction patterns indicated that the product was hexagonal VSi2 (a=4.572A?, c=6.372A?). Transmission electron microscopy images showed that the particle size of the product was in the range of 40-60nm in diameter. There was a strong absorption peak at 271nm in the UV-Vis absorption spectra. The oxidation of nano-crystalline VSi2 began to proceed at the temperature of 400°C in air. But the product had high thermal oxidation stability below 1000°C. It can be used as an antioxidation coating material.

Thermoelectric and magnetic properties of Cr1-xVxSi2 solid solutions

Hohl,Ramirez,Palstra,Bucher

, p. 70 - 76 (1997)

Cr1-xVxSi2 solid solutions have been prepared in the range 0≤x≤1. The thermopowers, resistivities, and magnetic susceptibilities of the solid solutions vary smoothly with composition and reveal a continuous transition from degenerate semiconducting (x = 0) to metallic (x = 1) behavior. S2/ρ ratios of the solid solutions are less than those of pure CrSi2. The thermoelectric properties of the solid solutions can be described in terms of a free-electron model, whereas an effective mass of 15 me has to be assumed in order to explain the results 0 magnetic measurements.

Solid state metathesis synthesis of metal silicides; reactions of calcium and magnesium silicide with metal oxides

Nartowski, Artur M.,Parkin, Ivan P.

, p. 187 - 191 (2008/10/08)

Reactions of transition metal oxides (V2O3, V2O5, Nb2O5, LiNbO3, Ta2O5, LiTaO3, MoO3 and Li2MoO4) with lithium silicide (Li2Si) and calcium silicide-magnesium silicide mix (CaSi2, Mg2Si) could be initiated by grinding, flame, filament or bulk thermal methods to produce a range of single phase transition metal silicides (VSi2, NbSi2 and TaSi2) in good yields (approximately 90%). The silicides were characterised by X-ray powder diffraction, scanning electron microscopy (SEM), energy dispersive analysis by X-rays (EDAX), electron probe, FTIR and microelemental analysis.

Thermodynamics and Kinetics of MSi2 Formation under Shock Compression

Batsanov,Gavrilkin,Markis,Meyers

, p. 103 - 109 (2008/10/08)

Thermodynamic and kinetic features of chemical transformation induced by shock compression are considered using reactions of metals with silicon as a model. The mechanisms and topography of processes that occur under cylindrical geometry of dynamic loading are discussed. The electron microscopy data for the shock compression products are reported.

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