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Rubidium telluride, with the chemical formula Rb2Te, is a crystalline solid composed of rubidium and tellurium. It is characterized by its black color and high reactivity. RUBIDIUM TELLURIDE has garnered attention in the field of materials science and technology due to its unique electrical and optical properties.

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  • 12210-70-7 Structure
  • Basic information

    1. Product Name: RUBIDIUM TELLURIDE
    2. Synonyms: RUBIDIUM TELLURIDE;dirubidium telluride;Einecs 235-388-2;Rubidium telluride (rb2te)
    3. CAS NO:12210-70-7
    4. Molecular Formula: Rb2Te
    5. Molecular Weight: 298.54
    6. EINECS: 235-388-2
    7. Product Categories: N/A
    8. Mol File: 12210-70-7.mol
  • Chemical Properties

    1. Melting Point: N/A
    2. Boiling Point: N/A
    3. Flash Point: N/A
    4. Appearance: /
    5. Density: N/A
    6. Refractive Index: N/A
    7. Storage Temp.: N/A
    8. Solubility: N/A
    9. CAS DataBase Reference: RUBIDIUM TELLURIDE(CAS DataBase Reference)
    10. NIST Chemistry Reference: RUBIDIUM TELLURIDE(12210-70-7)
    11. EPA Substance Registry System: RUBIDIUM TELLURIDE(12210-70-7)
  • Safety Data

    1. Hazard Codes: N/A
    2. Statements: N/A
    3. Safety Statements: N/A
    4. WGK Germany:
    5. RTECS:
    6. HazardClass: N/A
    7. PackingGroup: N/A
    8. Hazardous Substances Data: 12210-70-7(Hazardous Substances Data)

12210-70-7 Usage

Uses

Used in Infrared Optical Material Production:
Rubidium telluride is utilized as a key component in the creation of infrared optical materials, which are essential for various applications such as night vision devices, thermal imaging, and remote sensing.
Used in Semiconductor Manufacturing:
In the semiconductor industry, rubidium telluride serves as a crucial material for the production of semiconductors. Its unique properties contribute to the development of advanced electronic devices and components.
Used in Photoconductive Film Production:
Rubidium telluride is employed as a vital ingredient in the manufacturing of photoconductive films. These films are used in various applications, including xerography, solar cells, and optoelectronic devices, due to their ability to conduct electricity in response to light exposure.
Used in Thermoelectric Material Research:
In the field of thermoelectric materials, rubidium telluride is studied for its potential applications. Its properties make it a promising candidate for converting waste heat into electricity, which can improve energy efficiency in various industries.
Used as a Catalyst in Organic Synthesis:
Rubidium telluride also finds use as a catalyst in organic synthesis, facilitating chemical reactions and improving the efficiency of processes in the chemical and pharmaceutical industries.

Check Digit Verification of cas no

The CAS Registry Mumber 12210-70-7 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,2,1 and 0 respectively; the second part has 2 digits, 7 and 0 respectively.
Calculate Digit Verification of CAS Registry Number 12210-70:
(7*1)+(6*2)+(5*2)+(4*1)+(3*0)+(2*7)+(1*0)=47
47 % 10 = 7
So 12210-70-7 is a valid CAS Registry Number.
InChI:InChI=1/2Rb.Te/rRb2Te/c1-3-2

12210-70-7Upstream product

12210-70-7Downstream Products

12210-70-7Relevant articles and documents

A novel two-dimensional mercury antimony telluride: Low temperature synthesis and characterization of RbHgSbTe3

Li, Jing,Chen, Zhen,Wang, Xunxie,Proserpio, Davide M.

, p. 28 - 33 (1997)

RbHgSbTe3 (I), a novel two-dimensional quaternary mercury antimony telluride, was synthesized via an unconventional low-temperature route. Single crystals of I were grown at 180°C from solvothermal reactions using ethylenediamine as solvent. The crystal structure of I was determined by X-ray diffraction methods. The structure belongs to the orthorhombic crystal system, space group Cmcm (no. 63), a = 4.590 (2) A, b = 15.745 (4) A, c = 11.737 (2) A, Z = 4. The crystal structure of this compound consists of two-dimensional layers of ∞2[HgSbTe3- ] with Rb+ counterions located between the layers. Optical studies performed on the powder samples of I suggested that the compound is a narrow-gap semiconductor. A band-gap of 0.2 e V was estimated from its diffuse reflectance spectrum.

Mixed valent ternary iron chalcogenides: AFe2X3 (A = Rb, Cs; X = Se, Te)

Klepp,Sparlinek,Boller

, p. 1 - 5 (1996)

The isostructural compounds RbFe2Se3, RbFe2Te3, CsFe2Se3 and CsFe2Te3 were obtained as coarse lustrous crystals by reacting Fe, Se or Te and the corresponding alkali monochalcogenide. They are orthorhombic, oC24, space group Cmcm, Z = 4, with a = 9.507(3) A, b = 11.583(4) A, c = 5.638(2) A (RbFe2Se3); a = 10.126(9) A, b = 12.486(7) A, c = 5.921(1) A (RbFe2Te3); a = 9.834(5) A, b = 11.828(6) A, c = 5.673(2) A (CsFe2Se3); a = 10.438(4) A, b = 12.501(6) A, c = 5.958(2) A (CsFe2Te3). The crystal structures of RbFe2Se3, RbFe2Te3 and CsFe2Se3 were determined by single crystal diffractometer data and refined to conventional R-values of 0.043, 0.042 and 0.082 respectively. Isotypy of CsFe2Te3 was established from its powder diagram. The title compounds are isostructural with rasvumite, KFe2S3. Their crystal structures are characterized by infinite double chains of edge-sharing iron-centred chalcogen tetrahedra running parallel to [001]. The mean Fe-Se bond lengths are close to 2.39 A, the mean Fe-Te bond length in RbFe2Te3 is 2.57 A. The shortest Fe-Fe distances range from 2.765(5) A in the selenides to 2.821(4) A in RbFe2Te3.

The synthesis and crystal structure of K2UTe3

Sto?we, Klaus,Appel-Colbus, Stephan

, p. 1647 - 1651 (2008/10/08)

Syntheses of K2UTe3 were performed via polytelluride fluxes from K2Te3 and metallic uranium in the molar ratio 2:1 at 600 to 800 °C. Well-formed crystals were isolated by washing the reguli with liquid ammonia. One-phase powder samples of K2UTe3 are also available by reactions of stoichiometric mixtures of K2Te3 and uranium. K2Te3 was prepared in liquid ammonia from the elements using a glass apparatus specially designed for the synthesis of alkali metal chalcogenides. By x-ray structure analyses of single crystals we found K2UTe3 to crystallize monoclinic (space group C2/m, Z = 4) with the lattice parameters a = 800.41(3) pm, b = 1387.67(5) pm, c = 851.63(4) pm and β = 108.495(3)°. The crystal structure of the compound may be regarded as a stuffed AlCl3-type structure. The existence of an analogous compound Rb2UTe3 crystallizing isotypically to K2UTe3 has been shown by x-ray powder investigations.

Complex chalcogenides of the IVa metals with low dimensional anionic partial structures. Preparation and crystal structures of K2ZrTe3 and Rb2ZrTe3

Klepp, Kurt O.,Kolb, Andreas

, p. 441 - 446 (2007/10/03)

The isostructural compounds K2ZrTe3 and Rb2ZrTe3 were obtained at 1000°C by reacting K2Te and Rb2Te with stoichiometric amounts of Zr and Te. The compounds are monoclinic, mP24, space group P21/c, Z = 4 with a = 9.089(3), b = 14.148(4), c = 6.986(3)A, β = 105.90(1)° and a = 9.735(4), b = 14.300(7), c = 6.952(8) A, β = 108.61(2)°, respectively. The crystal structure was determined from diffractometer data and refined to R = 0.030 for 1452 Fo's for K2ZrTe3 and R = 0.038 for 1131 Fo's for Rb2ZrTe3. The crystal structure is of a new type, characterized by infinite anionic chains, 1∞ -[ZrTe3]2- built up by octahedra sharing opposite faces which run along [001]. The mean Zr-Te bond lengths are 2.921 and 2.920 A, respectively. The alkali cations separating the chains are characterized by two different - distorted octahedral and pentagonal bipyramidal - chalcogen environments.

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