1263379-85-6Relevant articles and documents
Acceptor-acceptor type isoindigo-based copolymers for high-performance n-channel field-effect transistors
Kim, Gyoungsik,Han, A-Reum,Lee, Hae Rang,Lee, Junghoon,Oh, Joon Hak,Yang, Changduk
, p. 2180 - 2183 (2014/02/14)
Two acceptor-acceptor (A-A) type copolymers (PIIG-BT and PIIG-TPD) with backbones composed exclusively of electron-deficient units are designed and synthesized. Both copolymers show unipolar n-type operations. In particular, PIIG-BT shows electron mobility of up to 0.22 cm2 V-1 s-1. This is a record value for n-type copolymers based on lactam cores. The Royal Society of Chemistry.
A thienoisoindigo-naphthalene polymer with ultrahigh mobility of 14.4 cm2/V·s that substantially exceeds benchmark values for amorphous silicon semiconductors
Kim, Gyoungsik,Kang, Seok-Ju,Dutta, Gitish K.,Han, Young-Kyu,Shin, Tae Joo,Noh, Yong-Young,Yang, Changduk
supporting information, p. 9477 - 9483 (2014/07/21)
By considering the qualitative benefits associated with solution rheology and mechanical properties of polymer semiconductors, it is expected that polymer-based electronic devices will soon enter our daily lives as indispensable elements in a myriad of flexible and ultra low-cost flat panel displays. Despite more than a decade of research focused on designing and synthesizing state-of-the-art polymer semiconductors for improving charge transport characteristics, the current mobility values are still not sufficient for many practical applications. The confident mobility in excess of ～10 cm2/V·s is the most important requirement for enabling the realization of the aforementioned near-future products. We report on an easily attainable donor-acceptor (D-A) polymer semiconductor: poly(thienoisoindigo-alt- naphthalene) (PTIIG-Np). An unprecedented mobility of 14.4 cm 2/V·s, by using PTIIG-Np with a high-k gate dielectric poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)), is achieved from a simple coating processing, which is of a magnitude that is very difficult to obtain with conventional TFTs by means of molecular engineering. This work, therefore, represents a major step toward truly viable plastic electronics.
Systematic investigation of isoindigo-based polymeric field-effect transistors: Design strategy and impact of polymer symmetry and backbone curvature
Lei, Ting,Cao, Yue,Zhou, Xu,Peng, Yang,Bian, Jiang,Pei, Jian
scheme or table, p. 1762 - 1770 (2012/08/07)
Ten isoindigo-based polymers were synthesized, and their photophysical and electrochemical properties and device performances were systematically investigated. The HOMO levels of the polymers were tuned by introducing different donor units, yet all polymers exhibited p-type semiconducting properties. The hole mobilities of these polymers with centrosymmetric donor units exceeded 0.3 cm2 V-1 s-1, and the maximum reached 1.06 cm2 V-1 s-1. Because of their low-lying HOMO levels, these copolymers also showed good stability upon moisture. AFM and GIXD analyses revealed that polymers with different symmetry and backbone curvature were distinct in lamellar packing and crystallinity. DFT calculations were employed to help us propose the possible packing model. Based on these results, we propose a design strategy, called molecular docking , to understand the interpolymer π-π stacking. We also found that polymer symmetry and backbone curvature affect interchain molecular docking of isoindigo-based polymers in film, ultimately leading to different device performance. Finally, our design strategy maybe applicable to other reported systems, thus representing a new concept to design conjugated polymers for field-effect transistors.
