- Aerosol-Assisted Chemical Vapor Deposition of ZnS from Thioureide Single Source Precursors
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A family of 12 zinc(II) thoureide complexes, of the general form [{L}ZnMe], [{L}Zn{N(SiMe3)2}], and [{L}2Zn], have been synthesized by direct reaction of the thiourea pro-ligands iPrN(H)CS(NMe2) H[L1], CyN(H)CS(NMe2) H[L3], tBuN(H)CS(NMe2) H[L2], and MesN(H)CS(NMe2) H[L4] with either ZnMe2 (1:1) or Zn{N(SiMe3)2}2 (1:1 and 2:1) and characterized by elemental analysis, NMR spectroscopy, and thermogravimetric analysis (TGA). The molecular structures of complexes [{L1}ZnMe]2 (1), [{L2}ZnMe]2] (2), [{L3}ZnMe]a? (3), [{L4}ZnMe]2] (4), [{L1}Zn{N(SiMe3)2}]2 (5), [{L2}Zn{N(SiMe3)2}]2 (6), [{L3}Zn{N(SiMe3)2}]2] (7), [{L4}Zn{N(SiMe3)2}]2] (8), [{L1}2Zn]2 (9), and [{L4}2Zn]2 (12) have been unambiguously determined using single crystal X-ray diffraction studies. Thermogravimetric analysis has been used to assess the viability of complexes 1-12 as single source precursors for the formation of ZnS. On the basis of TGA data compound 9 was investigated for its utility as a single source precursor to deposit ZnS films on silica-coated glass and crystalline silicon substrates at 150, 200, 250, and 300 °C using an aerosol assisted chemical vapor deposition (AACVD) method. The resultant films were confirmed to be hexagonal-ZnS by Raman spectroscopy and PXRD, and the surface morphologies were examined by SEM and AFM analysis. Thin films deposited from (9) at 250 and 300 °C were found to be comprised of more densely packed and more highly crystalline ZnS than films deposited at lower temperatures. The electronic properties of the ZnS thin films were deduced by UV-Vis spectroscopy to be very similar and displayed absorption behavior and band gap (Eg = 3.711-3.772 eV) values between those expected for bulk cubic-ZnS (Eg = 3.54 eV) and hexagonal-ZnS (Eg = 3.91 eV).
- Sullivan, Hannah S. I.,Parish, James D.,Thongchai, Prem,Kociok-K?hn, Gabriele,Hill, Michael S.,Johnson, Andrew L.
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- Insertion of arynes into thioureas: A new amidine synthesis
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Arynes, generated from trimethylsilyl phenyltriflate precursors, have been found to react with thioureas via a formal π-insertion into the C=S bond. The reaction contrasts with that of ureas, which proceeds via benzyne σ-insertion into the C-N bond, and r
- Biswas, Kallolmay,Greaney, Michael F.
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supporting information; experimental part
p. 4946 - 4949
(2011/11/06)
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- A convenient method for the synthesis of substituted thioureas
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A convenient method for the synthesis of substituted thioureas by the reaction of primary amines with molybdenum dialkyl dithiocarbamates has been developed. Primary amines on reaction with 0.5 equiv of molybdenum xanthate produce the corresponding thiour
- Maddani, Mahagundappa,Prabhu, Kandikere Ramaiah
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p. 7151 - 7154
(2008/03/11)
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- Thiocarbamoylation of amine-containing compounds 5. The mechanism of reactions of tetramethylthiuram disulfide with aliphatic amines
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Thiocarbamoylation of aliphatic amines with tetramethylthiuram disulfide (TMTD) was studied. The reactions were established to proceed according to a two-stage mechanism. In the first stage, S-(thiocarbamoyl)thiohydroxylamines and dimethyl dithiocarbamates are formed. The latter exist in equilibrium with dimethyldithiocarbamic acid, which can undergo decomposition to give dimethylamine and carbon disulfide. In the second stage, several competitive transformations of these intermediates into the final products occur, viz., (1) the reactions of CS2 with primary amines on heating (70-110 deg C) yield mixed and symmetrical thioureas and the reactions of CS2 with secondary amines give symmetrical dithiocarbamates, and (2) insertion of CS2 into S-(thiocarbamoyl)thiohydroxylamines affords thiuram disulfides. Thiuram disulfides formed from primary amines decompose to give isothiocyanates, which are converted into thioureas by condensation with amines, whereas thiuram disulfides which are obtained in the reactions with secondary amines and which cannot form thioureas react with amines analogously to TMTD.
- Boi, Luu Van
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p. 335 - 343
(2007/10/03)
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- Thiocarbamoylation of amine-containing compounds 4. Reactions of tetramethylthiuram disulfide with aliphatic amines
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Thiocarbamoylation of primary and secondary aliphatic amines with tetramethylthiuram disulfide in various solvents at different temperatures was studied. At 110 °C, the reactions with primary amines afforded mixed N,N-dimethyl-N′-alkyl(cycloalkyl)thiourea
- Van Boi, Luu
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p. 2294 - 2298
(2007/10/03)
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- Reaction of 1,4,2-Dithiazolium Salts with Amino Compounds
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Systematic studies on the behavior of 1,4,2-dithiazolium cations (1) toward various amino compounds (ammonia, aliphatic and aromatic amines, hydrazine, semicarbazide, thiosemicarbazide derivatives, etc.) were performed.The reaction pathway could be classified into three types depending on possibile three fission modes of the initially-formed adduct.The main products were 5-imino-1,4,2-dithiazole, thiourea, and 1,3,4-thiadiazole derivatives, through the three different pathways, respectively.In order to clarify the factors controlling the reaction courses, the reactions of 1 with p-substituted aniline derivatives were carried out under systematically varying conditions.The strength of bases and the polaritiy of solvents had clear influence on the reactivity.The reaction mechanism is also discussed.
- Yonemoto, Katsumi,Shibuya, Isao
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p. 4043 - 4050
(2007/10/02)
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