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10025-78-2

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10025-78-2 Usage

Chemical Description

Trichlorosilane is used in the reduction of 5-phenyl-hexafluoro-2,8-di(N,N-dimethylamino)dibenzophosphole-5-oxide.

Physical and chemical properties

Trichlorosilane is pungent stench flowable volatile colorless liquid at room temperature and pressure. It is highly flammable in air, it also has the risk of fire at below-18 ℃, when meets open fire, it burns strongly with red flames and white smoke, and SiO2, HCl and Cl2 can generate: SiHCl3 + O2 → SiO2 + HCl + Cl2; the vapor of three chlorosilane and air can form a wide range of concentrations of explosive gas mixture, and it can cause violent explosion when be heated. The thermal stability is better than dichlorosilane, it can decompose into toxic fumes chloride (HCl), Cl2 and Si at 900℃. When meets moisture, it can generate smoke, it can react violently with water: 2SiHCl3 + 3H2O → (HSiO) 2O + 6HCl; It can decompose in lye and release hydrogen: SiHCl3 + 3NaOH + H2O → Si (OH) 4 + 3NaCl + H2; and when it contacts oxidative substances, explosive reaction can occur. The reaction with acetylene, hydrocarbons and other organic hydrocarbons can produce chlorosilane: SiHCl3 + CH≡CH → CH2CHSiCl3, SiHCl3 + CH2 = CH2 → CH3CH2SiCl3; In the presence of lithium aluminum hydride, lithium borohydride, SiHCl3 can be reduced to silane. When the container is subjected to strong shock, liquid SiHCl3 will fire. It is soluble in benzene, ether etc.. Anhydrous trichlorosilane can not corrode iron and stainless steel, but in the presence of moisture, it can corrode most metals.

Trichlorosilane

Trichlorosilane is also known as trichlorosilane, silicon chloroform, it can be used the raw material of polymer organic silicon compound. Trichlorosilane is not only the important intermediate of manufacturing silane coupling agent, and other organic silicon products, but also the major raw material to manufacture polysilicon. Silane coupling agent is an important, high-tech, high value-added silicone composite material, the non-crosslinked resin can crosslink or modify by silane coupling agent, so it is increasingly and widely used in glass fiber, foundry, tires rubber and other industries. Silicon tetrachloride which is the major byproduct in the production of trichlorosilane is also the main raw material of silicone, the manufactures contain silicon ester, silicone oil, high temperature insulation paint, silicone resin, silicone rubber and heat-resistant padded material . High-purity silicon tetrachloride or high-purity silica is important raw material in manufacturing of inorganic silicon compounds, quartz fibers and optical fiber. The main purpose of the polysilicon product: 1. It can be made into solar cell, the radiant energy can be turned into electrical energy; 2. high purity crystalline silicon is an important semiconductor material; 3. it is important material in cermet, Astronautical; 4. it can be used in optical fiber communication which is recent modern communication means; 5. it can be used in excellent properties of the organosilicon compounds. The above information is edited by the lookchem of Wang Xiaodong.

Toxicity

After several minutes of inhaling trichlorosilane vapor, people show excitement, breathing reflex disorders, respiratory inflammation. When spills on the skin, it can cause necrosis, long-term healing of ulcers. Maximum allowable concentration is 1 mg/m3 (must test HCl). Production staff should wear closed-type overalls, protective masks, sealed glasses, latex gloves and other protective clothing to prevent direct contact with the respiratory organs, eyes and skin. Production equipment must be sealed, workshop should be ventilated. After work, people should take a shower, and aobserve personal hygiene. Production workers should have pre-employment and periodic medical examinations.

Chemical properties

It is colorless liquid. It is soluble in carbon disulfide, carbon tetrachloride, chloroform, benzene etc.

Uses

Different sources of media describe the Uses of 10025-78-2 differently. You can refer to the following data:
1. It can be used the raw material for polymer organic silicon compound, it can also be used in industrial instrumentation. It can be used the raw material for producing organic silicon compound, it is also the basic raw material of production polysilicon.
2. In organic synthesis.
3. Trichlorosilane is used in process of hydrosilylation. It is also used for reductive hydrazination which is a high yielding method for preparation of 1,1-disubstituted hydrazines.

Production method

The method of boiling chlorination Silicon powder after dried is added into boiling chloride furnace, and reacts with dry hydrogen chloride gas which passes into the furnace of at 340 ℃. The generated crude trichlorosilane goes through the wet dust collector, condenser tube and comes into distillation column to separate silicon tetrachloride, trichlorosilane gas from the distillation column is condensed to obtain finished trichlorosilane. Si + 3HCl → SiHCl3 + H2

Toxicity grading

Mid toxicity.

Acute oral toxicity

rat LD50: 1030 mg/kg; Inhalation-Mouse LC50: 1500 mg/m/2 hours.

Flammability hazard characteristics

It is flammable in case of fire, high temperature, oxidant; it can generate toxic fumes of chlorides and fluorides in case of water or high temperature.

Storage characteristics

Treasury should be ventilated and low-temperature dried; it should be stored separately with oxidants, acids.

Extinguishing agent

Dry powder, dry sand, carbon dioxide, foam.

Chemical Properties

Clear liquid with acrid odor of hydrogen chloride

General Description

A colorless fuming liquid with a pungent odor. Flash point 7°F. Vapor and liquid cause burns. More dense than water. Vapors are heavier than air.

Air & Water Reactions

Highly flammable. Ignites spontaneously in air [NFPA, 1991]. Reacts violently with water, steam, moisture in air to generate heat and flammable (H2) and corrosive (HCl) gases. [Handling Chemicals Safely 1980. p. 924].

Reactivity Profile

Trichlorosilane reacts with alcohols, acetone, light metals with generation of heat and combustible (H2) and corrosive (HCl) gases [Handling Chemicals Safely 1980. p. 924].

Health Hazard

Inhalation causes severe irritation of respiratory system. Liquid causes severe burns of eyes and skin. Ingestion causes severe burns of mouth and stomach.

Flammability and Explosibility

Substances and mixtureswhichincontactwithwateremitflammablegases

Chemical Reactivity

Reactivity with Water Reacts violently to form hydrogen chloride fumes (hydrochloric acid); Reactivity with Common Materials: Reacts with surface moisture to form hydrochloric acid which corrodes metals and generates flammable hydrogen gas; Stability During Transport: Stable; Neutralizing Agents for Acids and Caustics: Flush with water and rinse with sodium bicarbonate or lime solution; Polymerization: Not pertinent; Inhibitor of Polymerization: Not pertinent.

Safety Profile

Moderately toxic by ingestion and inhalation. A corrosive irritant to skin, eyes, and mucous membranes. A very dangerous fire hazard when exposed to heat, flame, or by chemical reaction. May be ignited by spark or impact. Spontaneously flammable in air. Explosive reaction with acetonitrile + diphenyl sulfoxide. Will react with water or steam to produce heat and toxic and corrosive fumes. Can react vigorously with oxidizing materials. To fight fire, use CO2, dry chemical. When heated to decomposition it emits toxic fumes of Cl-. See also CHLOROSILANES.

Check Digit Verification of cas no

The CAS Registry Mumber 10025-78-2 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,0,0,2 and 5 respectively; the second part has 2 digits, 7 and 8 respectively.
Calculate Digit Verification of CAS Registry Number 10025-78:
(7*1)+(6*0)+(5*0)+(4*2)+(3*5)+(2*7)+(1*8)=52
52 % 10 = 2
So 10025-78-2 is a valid CAS Registry Number.
InChI:InChI=1/Cl3Si/c1-4(2)3

10025-78-2 Well-known Company Product Price

  • Brand
  • (Code)Product description
  • CAS number
  • Packaging
  • Price
  • Detail
  • TCI America

  • (T0398)  Trichlorosilane  >98.0%(T)

  • 10025-78-2

  • 5g

  • 135.00CNY

  • Detail
  • TCI America

  • (T0398)  Trichlorosilane  >98.0%(T)

  • 10025-78-2

  • 25g

  • 185.00CNY

  • Detail
  • TCI America

  • (T0398)  Trichlorosilane  >98.0%(T)

  • 10025-78-2

  • 500g

  • 1,130.00CNY

  • Detail
  • Alfa Aesar

  • (14078)  Trichlorosilane, 98%   

  • 10025-78-2

  • 25g

  • 83.0CNY

  • Detail
  • Alfa Aesar

  • (14078)  Trichlorosilane, 98%   

  • 10025-78-2

  • 100g

  • 326.0CNY

  • Detail
  • Alfa Aesar

  • (14078)  Trichlorosilane, 98%   

  • 10025-78-2

  • 500g

  • 959.0CNY

  • Detail

10025-78-2SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 10, 2017

Revision Date: Aug 10, 2017

1.Identification

1.1 GHS Product identifier

Product name Trichlorosilane

1.2 Other means of identification

Product number -
Other names trichlorosilyl hydride

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only. Intermediates
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:10025-78-2 SDS

10025-78-2Synthetic route

silicon
7440-21-3

silicon

A

Methyltrichlorosilane
75-79-6

Methyltrichlorosilane

B

tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

C

trichlorosilane
10025-78-2

trichlorosilane

D

dimethylsilicon dichloride
75-78-5

dimethylsilicon dichloride

Conditions
ConditionsYield
With methylene chloride; copper In neat (no solvent) mixt. of CH3Cl/N2 (2:5) and Si-Cu (9:1) at 300°C;;A 4%
B n/a
C n/a
D 86.5%
With methylene chloride; copper In neat (no solvent) mixt. of CH3Cl/N2 (2:5) and Si-Cu (9:1) at 300°C;;A 4%
B n/a
C n/a
D 86.5%
With methylene chloride; copper In neat (no solvent) CH3Cl and Si-Cu mixt. (8:2) at 350°C;;
n-propyltrichlorosilane
141-57-1

n-propyltrichlorosilane

trichlorosilane
10025-78-2

trichlorosilane

Conditions
ConditionsYield
With hydrogen; Rh, Re/C at 550℃; under 5807.73 Torr; for 10.1h; Product distribution / selectivity;82%
hydrogenchloride
7647-01-0

hydrogenchloride

Cu(b),Si(20) (X%)

Cu(b),Si(20) (X%)

A

tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

B

trichlorosilane
10025-78-2

trichlorosilane

Conditions
ConditionsYield
In neat (no solvent) reaction at 300 °C;;A 20%
B 80%
In neat (no solvent) reaction at 300 °C;;A 20%
B 80%
ethyltrichlorosilane
115-21-9

ethyltrichlorosilane

trichlorosilane
10025-78-2

trichlorosilane

Conditions
ConditionsYield
With hydrogen; Rh, Re/C at 700℃; under 5947.36 Torr; for 17.8833h; Product distribution / selectivity;75.3%
Methyltrichlorosilane
75-79-6

Methyltrichlorosilane

A

tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

B

trichlorosilane
10025-78-2

trichlorosilane

Conditions
ConditionsYield
With hydrogen; Rh/C at 800℃; Product distribution / selectivity;A 73.3%
B 25.1%
tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

hydrogen
1333-74-0

hydrogen

trichlorosilane
10025-78-2

trichlorosilane

Conditions
ConditionsYield
In neat (no solvent) SiCl4 reacted with H2 in thermo-plasma at 50 kW at 3500-5000 K;72.9%
In neat (no solvent) Kinetics; byproducts: hydrogen chloride; bubbling H2 through liq. SiCl4 at constant temp.; introducing into the discharge zone; various product ratios yield various H2:SiCl4 molar ratio, molar energy input, and pressure; gas chromy.;60%
at 900 - 1300℃; under 1125.11 - 3750.38 Torr; Product distribution / selectivity;
Methyltrichlorosilane
75-79-6

Methyltrichlorosilane

trichlorosilane
10025-78-2

trichlorosilane

Conditions
ConditionsYield
With hydrogen; Rh, Re/C at 550℃; under 4556.19 Torr; for 4.55h; Product distribution / selectivity;70.8%
hydrogenchloride
7647-01-0

hydrogenchloride

silicon
7440-21-3

silicon

trichlorosilane
10025-78-2

trichlorosilane

Conditions
ConditionsYield
With CuO-ZnO-In2O3 mesocrystal microspheres Reagent/catalyst;61.2%
In not given heating of silicon washed with HCl and dried in a stream of HCl at 450-500 °C;;
In not given heating of silicon washed with HCl and dried in a stream of HCl at 450-500 °C;;
at 230 - 260℃;
Methyltrichlorosilane
75-79-6

Methyltrichlorosilane

A

Dichloromethylsilane
75-54-7

Dichloromethylsilane

B

tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

C

trichlorosilane
10025-78-2

trichlorosilane

Conditions
ConditionsYield
With hydrogen; Rh/C at 700℃; Product distribution / selectivity;A 5.5%
B 28.2%
C 22.9%
tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

hydrogen
1333-74-0

hydrogen

silicon
7440-21-3

silicon

trichlorosilane
10025-78-2

trichlorosilane

Conditions
ConditionsYield
copper(l) chloride at 525℃; Product distribution / selectivity;6.14%
at 525℃; Product distribution / selectivity;4.6%
at 500℃; under 22502.3 Torr; Product distribution / selectivity; Industry scale;
1,2-Dichloropropane
26198-63-0, 78-87-5

1,2-Dichloropropane

nitrogen

nitrogen

copper containing silicon

copper containing silicon

A

tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

B

allyltrichlorosilane
107-37-9

allyltrichlorosilane

C

1,2-bis-trichlorosilanyl-propane
18171-37-4

1,2-bis-trichlorosilanyl-propane

D

trichlorosilane
10025-78-2

trichlorosilane

Conditions
ConditionsYield
at 300℃; Produkt 5: 2-Dichlorsilyl-1-trichlorsilyl-propan;
chloroform
67-66-3

chloroform

silicon-copper

silicon-copper

A

tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

B

1,1,1,3,3,3-hexachloro-1,3-disilapropane
4142-85-2

1,1,1,3,3,3-hexachloro-1,3-disilapropane

C

tris(trichlorosilyl)methane
4775-56-8

tris(trichlorosilyl)methane

D

trichlorosilane
10025-78-2

trichlorosilane

Conditions
ConditionsYield
at 300℃;
hydrogenchloride
7647-01-0

hydrogenchloride

tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

hydrogen
1333-74-0

hydrogen

silicon
7440-21-3

silicon

trichlorosilane
10025-78-2

trichlorosilane

Conditions
ConditionsYield
copper(l) chloride at 300℃; Product distribution / selectivity;
dibromochlorosilane
82146-27-8

dibromochlorosilane

trimethylstannane
1631-73-8

trimethylstannane

A

tribromosilane
7789-57-3

tribromosilane

B

SiClBrH2
21479-75-4

SiClBrH2

C

SiCl2HBr
82146-25-6

SiCl2HBr

D

trichlorosilane
10025-78-2

trichlorosilane

E

monosilane
7440-21-3

monosilane

Conditions
ConditionsYield
In neat (no solvent) condensing of equimolar amts. of tinhydride and SiClHBr2 (trace of SiCl2HBr present) into cold finger, reaction at room temp. (30 min); further products; not isolated; IR spectroscopy;
hydrogenchloride
7647-01-0

hydrogenchloride

chloroform
67-66-3

chloroform

silicon
7440-21-3

silicon

A

tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

B

trichlorosilane
10025-78-2

trichlorosilane

Conditions
ConditionsYield
With methylene chloride; cadmium; copper mixing of Cu and Si; drying (300°C, 5 h, dry nitrogen), rising temp. to 350°C, addn. of MeCl (4 h), removal of MeSiCl3 and Me2SiCl2, Cd addn. at room temp., rising temp. to 300°C, CHCl3 and HCl addn., 40 h; product collection, distn., receiver cooled to -20.degree, dist. of remains in flask,;
hydrogenchloride
7647-01-0

hydrogenchloride

silicon
7440-21-3

silicon

A

tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

B

trichlorosilane
10025-78-2

trichlorosilane

Conditions
ConditionsYield
In solid Kinetics; gas-solid react.; temp. 200 - 600°C; not isolated; detn. by DSC, XRD;
In gas Kinetics; (H2) reacted at pressure 9.0E+4 Pa, and at temp. 623, 673, or 723 K, Q=300 sccm and concd. HCl=1.0, 3.3, 10 vol %;
In neat (no solvent) dried HCl is used; glowing heat;; product mixture obtained;;
tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

trimethylstannane
1631-73-8

trimethylstannane

A

trichlorosilane
10025-78-2

trichlorosilane

B

trimethyltin(IV)chloride
1066-45-1

trimethyltin(IV)chloride

C

monosilane
7440-21-3

monosilane

D

Dichlorosilane
4109-96-0

Dichlorosilane

Conditions
ConditionsYield
In neat (no solvent) inert atmosphere (N2, Ar or high vac.), room temperature, equimolar amts. of halosilane/tinhydride, reactn. time 36 h; not isolated; IR spectroscopy (identified 25-30% SiCl3H, 15% SiCl2H2 and 10% SiH4 in product mixt.);
trimethylstannane
1631-73-8

trimethylstannane

bromo trichloro silane
13465-74-2

bromo trichloro silane

A

tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

B

trichlorosilane
10025-78-2

trichlorosilane

C

monosilane
7440-21-3

monosilane

Conditions
ConditionsYield
In neat (no solvent) inert atmosphere (N2, Ar or high vac.), room temperature, equimolar amts. of halosilane/tinhydride, reactn. time 3 h; not isolated; IR spectroscopy (identified 85% SiCl3H, 5% SiH4 and 5% SiCl4 in product mixt.);
trimethylstannane
1631-73-8

trimethylstannane

dibromo dichlorosilane
13465-75-3

dibromo dichlorosilane

A

SiCl2HBr
82146-25-6

SiCl2HBr

B

trichlorosilane
10025-78-2

trichlorosilane

C

trimethyltin bromide
1066-44-0

trimethyltin bromide

D

monosilane
7440-21-3

monosilane

Conditions
ConditionsYield
In neat (no solvent) inert atmosphere (N2, Ar or high vac.), room temperature, two equiv. of tinhydride, reactn. time 2 h; not isolated; IR spectroscopy (identified 35-40% SiCl3H, 40% SiH4 and 10% SiCl2HBr in product mixt.);
calcium hydride
7789-78-8

calcium hydride

tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

A

trichlorosilane
10025-78-2

trichlorosilane

B

chlorosilane
13966-57-9

chlorosilane

C

Dichlorosilane
4109-96-0

Dichlorosilane

Conditions
ConditionsYield
In neat (no solvent) byproducts: H2, HCl; passing SiCl4 vapor over CaH2 below red heat;;A n/a
B 0%
C 0%
In neat (no solvent) byproducts: H2, HCl; passing SiCl4 vapor over CaH2 below red heat;;A n/a
B 0%
C 0%
nitrogen trichloride
10025-85-1

nitrogen trichloride

monosilane
7440-21-3

monosilane

A

trichlorosilane
10025-78-2

trichlorosilane

B

chlorosilane
13966-57-9

chlorosilane

Conditions
ConditionsYield
In gaseous matrix byproducts: HCl, H2; Ar carrier gas, room temp., static vac. glass reactor with quartz window (reaction mixt. made up in reactor); manometric monitoring, chemiluminescence spectroscopy;
tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

trichlorosilane
10025-78-2

trichlorosilane

Conditions
ConditionsYield
With Cu; H2S In neat (no solvent) byproducts: Cu sulfide, H2O; passing H2S through a mixture SiCl4 and Cu powder on boiling;;0%
With H2 In neat (no solvent) reaction at glowing heat;;
With Zn; HCl In neat (no solvent) byproducts: H2; heating of SiCl4 with Zn powder in a HCl stream up to boiling;;
With hydrogen; silica gel; zinc In water at 450℃; for 48h;
With hydrogen; copper at 750℃; for 1h;
tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

monosilane
7440-21-3

monosilane

A

trichlorosilane
10025-78-2

trichlorosilane

B

chlorosilane
13966-57-9

chlorosilane

C

Dichlorosilane
4109-96-0

Dichlorosilane

Conditions
ConditionsYield
In gas reactor temp.: 250 - 500°C; detn. by gas chromy.;
tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

hydrogen sulfide
7783-06-4

hydrogen sulfide

trichlorosilane
10025-78-2

trichlorosilane

Conditions
ConditionsYield
With Cu In neat (no solvent) byproducts: H2; treatment of the mixture in a liquid air cooled bomb tube;;0%
hydrogenchloride
7647-01-0

hydrogenchloride

tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

trichlorosilane
10025-78-2

trichlorosilane

Conditions
ConditionsYield
With Zn In neat (no solvent) byproducts: H2; heating of SiCl4 with Zn and liquid HCl in a sealed tube at 100 °C;;0%
tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

hydrogen
1333-74-0

hydrogen

A

hydrogenchloride
7647-01-0

hydrogenchloride

B

trichlorosilane
10025-78-2

trichlorosilane

C

silicon
7440-21-3

silicon

Conditions
ConditionsYield
byproducts: HCl; equil. reaction, at 1170-1540 K;
tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

hydrogen
1333-74-0

hydrogen

A

aluminium trichloride
7446-70-0

aluminium trichloride

B

trichlorosilane
10025-78-2

trichlorosilane

C

Dichlorosilane
4109-96-0

Dichlorosilane

Conditions
ConditionsYield
With aluminium In neat (no solvent) byproducts: SiCl4; reaction by passing SiCl4 vapor with H2 (1:1) over Al at 400 °C;; distn.;;
With Al In neat (no solvent) byproducts: SiCl4; reaction by passing SiCl4 vapor with H2 (1:1) over Al at 400 °C;; distn.;;
tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

hydrogen
1333-74-0

hydrogen

A

trichlorosilane
10025-78-2

trichlorosilane

B

Dichlorosilane
4109-96-0

Dichlorosilane

Conditions
ConditionsYield
With co-catalyst: pyrimidine or P(OPh)3; tri-n-butyl-tin hydride In toluene absence of air; H2-stream; further alternate co-catalysts: PCy3 or PBu3 or N-methylimidazole or pyridine or chinoline; gas chromy.;
tri-n-butyl-tin hydride In acetonitrile absence of air; H2-stream; gas chromy.;
With Al or Mg or Zn In neat (no solvent, gas phase) passing SiCl4 vapor and H2 over granulated Al, Mg or Zn at 350-450 °C;; condensation of the gaseous reaction product by dry ice, separation of the mixture by fractionation;;
With Al or Mg or Zn In gas passing SiCl4 vapor and H2 over granulated Al, Mg or Zn at 350-450 °C;; condensation of the gaseous reaction product by dry ice, separation of the mixture by fractionation;;
trichlorosilane
10025-78-2

trichlorosilane

5-((4-dodec-11-en-1-yl)phenyl)-5’-(4-hexylphenyl)-2,2’-bithiophene

5-((4-dodec-11-en-1-yl)phenyl)-5’-(4-hexylphenyl)-2,2’-bithiophene

trichloro(12-(4-(5’-(4-hexylphenyl)-[2,2’-bithiophen]-5-yl)phenyl)dodecyl)silane

trichloro(12-(4-(5’-(4-hexylphenyl)-[2,2’-bithiophen]-5-yl)phenyl)dodecyl)silane

Conditions
ConditionsYield
With platinum(0)-1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex In toluene at 90℃; Glovebox; Sealed tube;100%
4-vinylpyridine
100-43-6

4-vinylpyridine

trichlorosilane
10025-78-2

trichlorosilane

trichloro(hydrido)bis(4-vinylpyridine)silicon
1154061-81-0

trichloro(hydrido)bis(4-vinylpyridine)silicon

Conditions
ConditionsYield
In toluene at -78 - 20℃;99.5%
2-octene
111-67-1

2-octene

trichlorosilane
10025-78-2

trichlorosilane

(n-hep-1-me)SiCl3
18225-07-5

(n-hep-1-me)SiCl3

Conditions
ConditionsYield
In not given HSiCl3 and 2-octene at 50-60°C with peroxide;;99%
oct-1-ene
111-66-0

oct-1-ene

trichlorosilane
10025-78-2

trichlorosilane

octyltrichlorosilane
5283-66-9

octyltrichlorosilane

Conditions
ConditionsYield
In not given HSiCl3 and 1-octene at about 55°C with diacetylperoxide;;99%
In neat (no solvent) HSiCl3 and 1-octene at 150°C in presence of Cu;;
In neat (no solvent) HSiCl3 and 1-octene at 300°C under pressure;;
In neat (no solvent) HSiCl3 and 1-octene at 300°C under pressure;;
1.2-CH2CHCH2-1.2-C2B10H10
30620-32-7

1.2-CH2CHCH2-1.2-C2B10H10

trichlorosilane
10025-78-2

trichlorosilane

1,2-[(CH2)3SiCl3]2-1,2-C2B10H10
888501-94-8

1,2-[(CH2)3SiCl3]2-1,2-C2B10H10

Conditions
ConditionsYield
With catalyst:Karstedt platinum catalyst (3-3.5percent Pt) In neat (no solvent) (Ar); stirred for 2 h at room temp.; evapd., obtained as oil;99%
p-phenylpyridine
939-23-1

p-phenylpyridine

trichlorosilane
10025-78-2

trichlorosilane

trichloro(hydrido)bis(4-phenylpyridine)silicon
1154061-84-3

trichloro(hydrido)bis(4-phenylpyridine)silicon

Conditions
ConditionsYield
In toluene at -78 - 20℃;99%
pyridine
110-86-1

pyridine

trichlorosilane
10025-78-2

trichlorosilane

trichloro(hydrido)bis(pyridine)silicon
17748-48-0, 38685-10-8

trichloro(hydrido)bis(pyridine)silicon

Conditions
ConditionsYield
In toluene at -78 - 20℃;98.8%
C5H10Cl4N2Si
1421683-29-5

C5H10Cl4N2Si

trichlorosilane
10025-78-2

trichlorosilane

C5H12Cl2N2Si
1610766-37-4

C5H12Cl2N2Si

Conditions
ConditionsYield
In tetrahydrofuran at 20℃; for 12h; Inert atmosphere; Schlenk technique;98%
trichlorosilane
10025-78-2

trichlorosilane

trichlorobis[4-(dimethylamino)pyridine](hydrido)silicon
1154061-83-2

trichlorobis[4-(dimethylamino)pyridine](hydrido)silicon

Conditions
ConditionsYield
In tetrahydrofuran at -78 - 20℃;97.4%
[(1',1'-diallyloxycarbonyl)-1,2-methano]-1,2-dihydro-C60-fullerene
1355962-66-1

[(1',1'-diallyloxycarbonyl)-1,2-methano]-1,2-dihydro-C60-fullerene

trichlorosilane
10025-78-2

trichlorosilane

Conditions
ConditionsYield
With dicyclopentadienyl platinum dichloride In toluene at 70℃; for 24h; Inert atmosphere; Schlenk technique;97%
trichlorosilane
10025-78-2

trichlorosilane

silicon
7440-21-3

silicon

Conditions
ConditionsYield
Stage #1: trichlorosilane under 3.75038 Torr; for 6h; Pulsed microwave radiation (25-50W);
Stage #2: With hydrogen at 900℃;
96.7%
With hydrogen chemical vapor deposition (8% SiHCl3 in H2, 1100°C);
With hydrogen chemical vapor deposition (hot-wall reactor, basic pressure 10 or 76 Torr, 1223 K);
picoline
108-89-4

picoline

trichlorosilane
10025-78-2

trichlorosilane

trichloro(hydrido)bis(4-methylpyridine)silicon
1154061-79-6

trichloro(hydrido)bis(4-methylpyridine)silicon

Conditions
ConditionsYield
In toluene at -78 - 20℃;96.3%
4-tert-butylpyridine
3978-81-2

4-tert-butylpyridine

trichlorosilane
10025-78-2

trichlorosilane

bis(4-tert-butylpyridine)trichloro(hydrido)silicon
1154061-82-1

bis(4-tert-butylpyridine)trichloro(hydrido)silicon

Conditions
ConditionsYield
In toluene at -78 - 20℃;96.1%
trichlorosilane
10025-78-2

trichlorosilane

phenol
108-95-2

phenol

triphenoxysilane
3898-65-5

triphenoxysilane

Conditions
ConditionsYield
at 50℃; for 4h;96%
allyl methacrylate
96-05-9

allyl methacrylate

trichlorosilane
10025-78-2

trichlorosilane

3-(trichlorosilyl)propyl 2-methylprop-2-enoate
7351-61-3

3-(trichlorosilyl)propyl 2-methylprop-2-enoate

Conditions
ConditionsYield
With platinum(0)-1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex In toluene at 70℃; for 3h;96%
trichlorosilane
10025-78-2

trichlorosilane

hydrogen
1333-74-0

hydrogen

monosilane
7440-21-3

monosilane

Conditions
ConditionsYield
With titanium tetrachloride In melt melting NaCl, KCl and AlCl3 at ca. 150°C, heating to ca. 300°C, addn. of TiCl4 and Al under H2 within 2 h, addn. of more Al at 230°C, then addn. of SiHCl3 under H2 with stirring within 1 h; sepn. of the chlorosilane/silane mixture by fractional condensation and rectification;96%
(carbonyl)(chloro)(hydrido)tris(triphenylphosphine)ruthenium(II)
157072-60-1, 61521-25-3, 166941-05-5, 16971-33-8

(carbonyl)(chloro)(hydrido)tris(triphenylphosphine)ruthenium(II)

trichlorosilane
10025-78-2

trichlorosilane

Ru(SiCl3)Cl(CO)(P(C6H5)3)2

Ru(SiCl3)Cl(CO)(P(C6H5)3)2

Conditions
ConditionsYield
In toluene at 60℃; for 0.333333h; Inert atmosphere; Schlenk technique;96%
KRYTOX allyl ether KDP-4599

KRYTOX allyl ether KDP-4599

trichlorosilane
10025-78-2

trichlorosilane

KRYTOX 3-trichlorosilylpropyl KDP-4599

KRYTOX 3-trichlorosilylpropyl KDP-4599

Conditions
ConditionsYield
dihydrogen hexachloroplatinate at 165℃; for 6h;95%
dihydrogen hexachloroplatinate at 175℃; for 8h;95%
decacarbonyldirhenium(0)
14285-68-8

decacarbonyldirhenium(0)

trichlorosilane
10025-78-2

trichlorosilane

Re(CO)5(SiCl3)

Re(CO)5(SiCl3)

Conditions
ConditionsYield
In hexane under N2; Re2(CO)10 and the silane in hexane was pressurized with CO (70 atm., autoklave), heated at 200°C for 16 h; cooled, gases were vented, washed with hexane, dried with a stream of N2, sublimation;95%
trichlorosilane
10025-78-2

trichlorosilane

2,3,4,5,6-pentafluorophenylmagnesium bromide
879-05-0

2,3,4,5,6-pentafluorophenylmagnesium bromide

tris(pentafluorophenyl)silane
20160-40-1

tris(pentafluorophenyl)silane

Conditions
ConditionsYield
In diethyl ether reaction at -12°C (1hour) and heating under reflux for 12 hours;;95%
In diethyl ether reaction at -12°C (1hour) and heating under reflux for 12 hours;;95%
dodecacarbonyl-triangulo-triruthenium
15243-33-1

dodecacarbonyl-triangulo-triruthenium

trichlorosilane
10025-78-2

trichlorosilane

cis-Ru(CO)4(SiCl3)2
36570-60-2

cis-Ru(CO)4(SiCl3)2

Conditions
ConditionsYield
In hexane byproducts: CO; Irradiation (UV/VIS); in a closed quartz tube filled with CO gas (2 atm) irradiation during 3d with stirring; cooling at -78°C, 2h, drying the crystals in vac., sublimation at 40°C, 0.02 Torr onto a probe cooled to -78°C;95%
trichlorosilane
10025-78-2

trichlorosilane

water
7732-18-5

water

hidrogen-silsesquioxane

hidrogen-silsesquioxane

Conditions
ConditionsYield
In water addn. of water to silicon compd. at -78°C with stirring; filtration, washing ppt. with water, drying in vac. at 85°C overnight;95%
In diethyl ether cooling (ice), stirring (1 d, room temp.); filtn., washing, drying (vac. 1E-3 mbar, 2 d, 80°C);
bis(ethylene)(tricyclohexylphosphine)platinum
57158-83-5

bis(ethylene)(tricyclohexylphosphine)platinum

trichlorosilane
10025-78-2

trichlorosilane

[(Pt(μ-H)(SiCl3)[P(C6H11)3])2] * toluene

[(Pt(μ-H)(SiCl3)[P(C6H11)3])2] * toluene

Conditions
ConditionsYield
In toluene N2-atmosphere; condensing of excess silane into soln. of Pt-complex (-196°C), warming to room temp. (pptn.); filtration, washing (hexane), drying (vac.); elem. anal.;95%
4-Ethylpyridine
536-75-4

4-Ethylpyridine

trichlorosilane
10025-78-2

trichlorosilane

trichlorobis(4-ethylpyridine)(hydrido)silicon
1154061-80-9

trichlorobis(4-ethylpyridine)(hydrido)silicon

Conditions
ConditionsYield
In toluene at -78 - 20℃;95%
octadec-1-ene
112-88-9

octadec-1-ene

trichlorosilane
10025-78-2

trichlorosilane

octadecyltrichlorosilane
112-04-9

octadecyltrichlorosilane

Conditions
ConditionsYield
In neat (no solvent) HSiCl3 and 1-octadecene at about 300°C under pressure;;94%
In neat (no solvent) HSiCl3 and octadecene at 300°C under pressure;;94%
In neat (no solvent) HSiCl3 and 1-octadecene at about 300°C under pressure;;94%
In neat (no solvent) HSiCl3 and octadecene at 300°C under pressure;;94%
With SiliaCat Pt(0) - mesoporous organosilica microspheres doped with Pt nanoparticles In neat (no solvent) at 65℃; for 1h;87 %Spectr.
chloro-carbonyl-hydrido-bis(triphenylphosphine)osmium
129134-01-6

chloro-carbonyl-hydrido-bis(triphenylphosphine)osmium

trichlorosilane
10025-78-2

trichlorosilane

OsCl(triphenylphosphine)2(CO)(trichlorosilyl)
129133-98-8

OsCl(triphenylphosphine)2(CO)(trichlorosilyl)

Conditions
ConditionsYield
In toluene N2-atmosphere; addn. of excess HSiCl3 to soln. of Os-complex, stirring for 20 min at 60°C; concn., crystn. on addn. of hexane;94%
[Os(κ2-dimethyldithiocarbamate)H(CO)(PPh3)2]
56800-92-1

[Os(κ2-dimethyldithiocarbamate)H(CO)(PPh3)2]

trichlorosilane
10025-78-2

trichlorosilane

[Os(κ2-dimethyldithiocarbamate)(SiCl3)(CO)(PPh3)2]
895138-95-1

[Os(κ2-dimethyldithiocarbamate)(SiCl3)(CO)(PPh3)2]

Conditions
ConditionsYield
In toluene toluene and HSiCl3 were added to Os complex in Schlenk tube; sealed; cooled in liq. N2; evacuated; warmed to ambient temp.; heated at 100°C for 12 h; cooled; concd. (vac.); hexane added; filtered; recrystd. (CH2Cl2/hexane); elem. anal.;94%
(η5-cyclopentadienyl)methylbis(methyldiphenylphosphine)ruthenium
114674-46-3

(η5-cyclopentadienyl)methylbis(methyldiphenylphosphine)ruthenium

trichlorosilane
10025-78-2

trichlorosilane

Cp(PMePh2)2RuSiCl3
475635-32-6

Cp(PMePh2)2RuSiCl3

Conditions
ConditionsYield
In further solvent(s) byproducts: CH4; (Ar); mixing ruthenium complex with HSiCl3, freezing with liq. N2, swarming to room temp., sealing, heating at 100°C for 16 h, cooling toroom temp.; evapn., dissolving in CH2Cl2, filtration through glass wool, addn. of hexanes, concn., filtration, drying; elem. anal.;92%
styrene
292638-84-7

styrene

trichlorosilane
10025-78-2

trichlorosilane

1-phenyl-2-(trichlorosilyl)ethane
940-41-0

1-phenyl-2-(trichlorosilyl)ethane

Conditions
ConditionsYield
Stage #1: trichlorosilane; C17H36N2OPtSi2 for 0.0833333h; Inert atmosphere; Cooling with water bath;
Stage #2: styrene at 16℃; for 7h; Product distribution / selectivity; Inert atmosphere;
92%
C17H36N2OPtSi2 In dodecane for 7h; Product distribution / selectivity; Inert atmosphere;
trichlorosilane
10025-78-2

trichlorosilane

sodium dioctylphosphinate
67206-59-1

sodium dioctylphosphinate

dioctylphosphinyl chloride
7539-86-8

dioctylphosphinyl chloride

Conditions
ConditionsYield
In chloroform at 80℃; for 16h;91.5%

10025-78-2Relevant articles and documents

Analysis of the pyrolysis products of dimethyldichlorosilane in the chemical vapor deposition of silicon carbide in argon

Cagliostro,Riccitiello,Carswell

, p. 607 - 614 (1990)

A study of the products and reactions occurring during the chemical vapor deposition of silicon carbide from dimethyldichlorosilane in argon is presented. The silicon carbide solid that formed showed the presence of hydrogen and chlorine as impurities, wh

Amorphous silicon: New insights into an old material

Spomer, Natalie,Holl, Sven,Zherlitsyna, Larissa,Maysamy, Fariba,Frost, Andreas,Auner, Norbert

, p. 5600 - 5616 (2015)

Amorphous silicon is synthesized by treating the tetrahalosilanes SiX4 (X=Cl, F) with molten sodium in high boiling polar and non-polar solvents such as diglyme or nonane to give a brown or a black solid showing different reactivities towards suitable reagents. With regards to their technical relevance, their stability towards oxygen, air, moisture, chlorine-containing reaction partners RCl (R=H, Cl, Me) and alcohols is investigated. In particular, reactions with methanol are a versatile tool to deliver important products. Besides tetramethoxysilane formation, methanolysis of silicon releases hydrogen gas under ambient conditions and is thus suitable for a decentralized hydrogen production; competitive insertion into the MeO-H versus the Me-OH bond either yields H- and/or methyl-substituted methoxy functional silanes. Moreover, compounds, such as MenSi(OMe)4-n (n=0-3) are simply accessible in more than 75% yield from thermolysis of, for example, tetramethoxysilane over molten sodium. Based on our systematic investigations we identified reaction conditions to produce the methoxysilanes MenSi(OMe)4-n in excellent (n=0:100%) to acceptable yields (n=1:51%; n=2:27%); the yield of HSi(OMe)3 is about 85%. Thus, the methoxysilanes formed might possibly open the door for future routes to silicon-based products. Amorphous silicon is easily synthesized from tetrahalosilanes SiX4 (X=Cl, F) and molten sodium in different solvents. Reactivity studies prove the resulting materials as versatile tools for the formation of technical important silanes, such as the silicon chloro-, alkoxy-, and methylalkoxy-substituted derivatives (see figure; bl=black, br=brown).

Yolk-Shell-Structured CuO?ZnO?In2O3 Trimetallic Oxide Mesocrystal Microspheres as an Efficient Catalyst for Trichlorosilane Production

Guo, Xiangfeng,Ji, Yongjun,Jia, Lihua,Li, Jing,Li, Qiongguang,Li, Xin,Liu, Hezhi,Su, Fabing,Zhang, Yu,Zhong, Ziyi

, (2020)

Trichlorosilane (TCS), the primary chemical feedstock for production of high-purity Si used in Si-based solar cells, is currently manufactured industrially via a non-catalytic hydrochlorination of metallurgical Si. This process generates a huge amount of undesirable silicon tetrachloride (STC) byproduct. Here we report the synthesis of yolk-shell-structured CuO?ZnO?In2O3 trimetallic oxide mesocrystal microspheres that can be employed as an efficient catalyst to produce TCS catalytically. The CuO?ZnO?In2O3 microspheres with multiple hetero-interfaces were prepared using a facile solvothermal reaction followed by calcination. We found that differing from a single CuO mesocrystal, the electronic density on Cu atoms in the CuO phase within CuO?ZnO and CuO?ZnO?In2O3 can be tuned by varying the composition. When used as a catalyst for Si hydrochlorination reaction to produce TCS, CuO?ZnO?In2O3 shows excellent catalytic performance with very high Si conversion and TCS selectivity. Under the same reaction conditions, the TCS yield increased 13 times relative to the catalyst-free process. This work demonstrates the possibility to decrease the amount of STC needed for the catalytic manufacture of TCS, and provides an approach to the facile synthesis of multi-component mesocrystal materials with a specific structure.

Hydrodechlorination of silicon tetrachloride to trichlorosilane over ordered mesoporous carbon catalysts: Effect of pretreatment of oxygen and hydrochloric acid

Kwak, Do-Hwan,Akhtar, M. Shaheer,Kim, Ji Man,Yang, O-Bong

, p. 1802 - 1805 (2016)

This paper reports on the catalytic reaction for the conversion of silicon tetrachloride (STC) to trichlorosilane (TCS) over pretreated ordered mesoporous carbon (OMC) catalysts by oxygen (denoted as OMC-O2) and hydrochloric acid (denoted as OM

Formation of 1,1-dichloro-2-vinyl-1-silacyclopropane by a photoinduced reaction between dichlorosilylene and 1,3-butadiene

Boganov, Sergey E.,Promyslov, Vladimir M.,Rynin, Stanislav S.,Krylova, Irina V.,Egorov, Mikhail P.

, p. 574 - 576 (2018)

A matrix FTIR study of interaction between SiCl2 and 1,3-butadiene revealed that at low temperatures, it stops at the step of complexation between the reactants. This allowed us to investigate a photochemical version of this interaction resulti

Preparation of trichlorosilane by plasma hydrogenation of silicon tetrachloride

Gusev,Kornev,Sukhanov

, p. 1023 - 1026 (2006)

We have studied silicon tetrachloride hydrogenation in an rf (40.68 MHz) plasma and have determined the trichlorosilane yield as a function of the molar energy input, H2: SiCl4 molar ratio, and pressure. The highest trichlorosilane y

Reaction of Si with HCl to form chlorosilanes time dependent nature and reaction model

Noda, Suguru,Tanabe, Katsuaki,Yahiro, Takashi,Osawa, Toshio,Komiyama, Hiroshi

, p. C399-C404 (2004)

We propose a chemical vapor deposition (CVD) process with closed gas recycling for making low-cost, crystalline silicon thin films for solar cells, which connects chlorosilane synthesis from Si and HCl with Si thin-film growth by CVD from chlorosilanes. In this work we studied the formation of chlorosilanes by the reaction of Si with HCl at temperatures ranging from 623 to 723 K. The reaction rate is time dependent, and many pores are formed on the surface of particles after reaction. These pores are active sites for chemical reactions, and the reaction rates increase with increasing pore area. The rate can be correlated with the conversion ratio of Si, and the temporal evolution of the reaction rate can be explained by a reaction model called the shrinking-core model with growing pores. By using this model, we estimated the reaction rates per unit area of activated surfaces and converted them into a rate equation that can be used for the reactor design. The incubation time of the reaction can be shortened by pretreating the Si particles in a fluidized bed, which probably creates defects in the native oxide layers on the particles, which in turn become reactive sites.

-

Paetzold,Roewer,Herzog

, p. 147 - 152 (1996)

Bu3SnH is an effective reagent for partial conversion of Si-Cl into Si-H groups. The presented hydrogenation mechanism postulates the coordination of the catalyst (Lewis bases) or the solvent to silicon, giving an intermediate with higher coordinated silicon atom in the first step, followed by the attack of tributyltin hydride by a single electron transfer. This mechanism implies that the intermediate having a hypervalent silicon atom reacts more rapidly than the starting tetracoordinated silane.

Direct synthesis of tris(chlorosilyl)methanes containing Si-H bonds

Han, Joon Soo,Yeon, Seung Ho,Yoo, Bok Ryul,Jung, Il Nam

, p. 93 - 95 (1997)

Direct reaction of elemental silicon with a mixture of chloroform and hydrogen chloride has been studied in the presence of a copper catalyst using a stirred reactor equipped with a spiral band agitator at various temperatures from 280 to 340 °C. Tris(chlorosilyl)methanes 1a-e with Si-H bonds were obtained as the major products along with byproducts of bis(chlorosilyl)methanes, derived from the reaction of silicon with methylene chloride formed by the decomposition of chloroform, and trichlorosilane and tetrachlorosilane produced from the reaction of elemental silicon with hydrogen chloride. The decomposition of chloroform was suppressed and the production of polymeric carbosilanes reduced by adding hydrogen chloride to chloroform. The deactivation problem of elemental silicon due to the decomposition of chloroform and polycarbosilanes was eliminated. Cadmium was a good promoter for the reaction, while zinc was found to be an inhibitor for this particular reaction.

METHOD FOR THE DEHYDROGENATION OF DICHLOROSILANE

-

Paragraph 0102; 0103, (2021/06/22)

Dichlorosilane and trichlorosilane are dehydrogenated at elevated temperature in the presence of an ammonium or phosphonium salt as a catalyst, and a halogenated hydrocarbon or hydrogen halide. The method may be used to synthesize organochlorosilane.

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