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12068-90-5

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12068-90-5 Usage

Chemical Properties

gray powder(s); used as a semiconductor in solar cells, in thin-film transistors and in infrared detectors [HAW93] [STR93]

Uses

Different sources of media describe the Uses of 12068-90-5 differently. You can refer to the following data:
1. Mercury cadmium telluride (MCT)is the mostim- portantmaterial currently in use for the manufacture of high performance infrared (IR) detectors. Mercury telluride and mercury telluride-cadmium telluride are semiconductors which have been investigated as intrinsic infrared detecting materials. Complete coverage of the low-loss fiber windows by mercury telluride quantum dot are used in colloidal nanocrystals for telecommunications.
2. Semiconductor in solar cells, thin-film transistors, infrared detectors, ultrasonic amplifiers.

Check Digit Verification of cas no

The CAS Registry Mumber 12068-90-5 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,6 and 8 respectively; the second part has 2 digits, 9 and 0 respectively.
Calculate Digit Verification of CAS Registry Number 12068-90:
(7*1)+(6*2)+(5*0)+(4*6)+(3*8)+(2*9)+(1*0)=85
85 % 10 = 5
So 12068-90-5 is a valid CAS Registry Number.
InChI:InChI=1/Hg.Te/rHgTe/c1-2

12068-90-5 Well-known Company Product Price

  • Brand
  • (Code)Product description
  • CAS number
  • Packaging
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  • Detail
  • Alfa Aesar

  • (36666)  Mercury(II) telluride, 99.999% (metals basis)   

  • 12068-90-5

  • 2g

  • 839.0CNY

  • Detail
  • Alfa Aesar

  • (36666)  Mercury(II) telluride, 99.999% (metals basis)   

  • 12068-90-5

  • 10g

  • 3175.0CNY

  • Detail
  • Alfa Aesar

  • (88244)  Mercury(II) telluride, 99% (metals basis)   

  • 12068-90-5

  • 5g

  • 1591.0CNY

  • Detail
  • Alfa Aesar

  • (88244)  Mercury(II) telluride, 99% (metals basis)   

  • 12068-90-5

  • 25g

  • 7955.0CNY

  • Detail

12068-90-5SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 18, 2017

Revision Date: Aug 18, 2017

1.Identification

1.1 GHS Product identifier

Product name tellanylidenemercury

1.2 Other means of identification

Product number -
Other names telluroxomercury

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:12068-90-5 SDS

12068-90-5Downstream Products

12068-90-5Relevant articles and documents

Investigation on self-aligned HgTe nano-crystals induced by controlled precipitation in PbTe-HgTe quasi-binary compound semiconductor alloys

Lee, Manjong,Kim, Choong-Un

, p. 267 - 275 (2001)

The present paper reports the results of the controlled precipitation for the HgTe nano-crystals in the PbTe semiconductor matrix and demonstrates its effectiveness in producing well-organized and crystallographically aligned semiconductor nano-crystals. Following the same procedure used in metallic alloys, the semiconductor alloys are treated at 600°C for 48 h, quenched and aged up to 400 h at 300°C and 400°C to induce homogeneous nucleation and growth of HgTe precipitates. Examination of the resulting precipitates using transmission electron microscopy (TEM) reveals that the coherent HgTe precipitates form as thin disks along the {1 0 0} habit planes of PbTe matrix. It is also found that the precipitate undergoes a gradual shape change without any noticeable coarsening, from a disk to a cube, as the aging time increases. The microstructure after full aging is found to contain almost equal sized HgTe cubes, roughly 7 nm, that maintain coherency with {1 0 0} planes of the matrix. These results combined with the extreme dimension of the precipitates and the simplicity of the formation process leads to a belief that controlled precipitation can be an effective method in preparing a desirable quantum-dot microstructure.

Lawson, W. D.,Nielsen, S.,Putley, E.H.,Young, A. S.

, p. 325 - 329 (1959)

PYROELECTRICITY OF Cd-DOPED TELLURIDE THIN FILM.

Tawfik, A.,El Mekawey, F. M.

, p. 297 - 304 (1988)

The crystalline structure, electrical conductivity and pyroelectricity of freshly prepared Hg//0//. //7Cd//0//. //3Te thin film have been investigated in detail. In the initial heating stages, the pyroelectric current slowly falls, followed by abrupt decreases corresponding to the breaks in the curves at temperatures depending on the poling temperature, as a general trend in common. Thus 70 degree is the best poling temperature for attainment of a high generated pyroelectric current, holding up to relatively high working temperatures for the investigated HgCdTe films in the electronic and engineering industries. 13 Refs.

Solution-chemical syntheses of nanostructure HgTe via a simple hydrothermal process

Salavati-Niasari, Masoud,Bazarganipour, Mehdi,Davar, Fatemeh

, p. 121 - 125 (2010)

HgTe rod-shape composed of crystalline particles has been prepared by a hydrothermal method, and characterized by means of X-ray powder diffraction (XRD), scanning electron microscopy (SEM), and transition electron microscopy (TEM). The effects of capping agents, reductants, reaction temperatures, and reaction times on crystal structures and shapes of HgTe have been investigated. The results showed that the CTAB as capping agent plays a crucial role in the hydrothermal process. The synthesis procedure is simple and uses less toxic reagents than the previously reported methods.

Molar heat capacities of CdTe, HgTe and CdTe-HgTe alloys in the solid state

Gambino,Vassiliev,Bros

, p. 13 - 24 (1991)

Using a differential scanning calorimeter, the molar heat capacities of the two components HgTe and CdTe and of ten solid alloys of the CdTe-HgTe system were measured at constant pressure between 300 K and 523 K. Irregular variations of the Cp = f(T) curves of CdTe-HgTe alloys suggest the existence of a solid-state miscibility gap in this system. The limit of the (solid ? solid(1) + solid(2)) miscibility gap and coordinates of the critical temperature (xCdTe = 0.55, T = 455 K) are proposed. From Cp data obtained in a single-phase solid region, the excess molar heat capacities (ΔCp = Cp(exp) - Cp(calc)) at 500 K were deduced: the maximum negative excess Cp is located at xCdTe = 0.5.

Ghandhi, S. K.,Bhat, I. B.,Ehsani, H.,Nucciarone, D.,Miller, G.

, p. 137 - 139 (1989)

Zorll, U.

, p. 167 - 169 (1954)

LOW TEMPERATURE SYNTHESIS OF Hg1 - xCdxTe, O less than equivalent to x less than equivalent to 1.

Ben-Dor,Yellin,Shaham

, p. 1229 - 1233 (1983)

Solid solutions of Hg//1// minus //xCd//xTe with O less than equivalent to x less than equivalent to 1. 0 were prepared at low temperatures, where the Hg pressure is about 1 atm. For the composition x less than 0. 7, complete reaction was observed within

Harman, T. C.,Logan, M. J.,Goering, H. L.

, p. 228 - 235 (1958)

Bridgman, P. W.

, p. 237 - 239 (1940)

Brukl, A.

, (1924)

Colloidal HgTe nanocrystals with widely tunable narrow band gap energies: From telecommunications to molecular vibrations

Kovalenko, Maksym V.,Kaufmann, Erich,Pachinger, Dietmar,Roither, Juergen,Huber, Martin,Stangl, Julian,Hesser, Guenter,Schaeffler, Friedrich,Heiss, Wolfgang

, p. 3516 - 3517 (2006)

A convenient, aqueous-based synthesis of stable HgTe nanocrystals with widely size-tunable room temperature emission between wavelengths of 1.2 to 3.7 μm is demonstrated. By the choice of the thiols, applied as stabilizers, we optimized the growth dynamics, the luminescence quantum yields (up to 40%), and a ligand-exchange procedure, required to transfer the nanocrystals from water to nonpolar organic solvents. The latter is greatly improved and facilitated by the use of mercaptoethylamine as initial stabilizer. The possibility to tune the HgTe nanocrystal sizes from 3 to 12 nm and to control their surface functionalities (hydrophobic and hydrophilic) makes them very promising for the development of infrared optical devices, emitting in the wavelength region between the telecommunications and the molecular vibrations. Copyright

Rb2Hg3Te4: A New Layered Compound Synthesized from Solvothermal Reactions

Li, Jing,Chen, Zhen,Lam, Kin-Chung,Mulley, Suzanne,Proserpio, Davide M.

, p. 684 - 687 (1997)

A layered mercury telluride, Rb2Hg3Te4, was discovered during an exploration of hydro(solvo)thermal synthesis of tellurides at temperatures somewhat above the boiling point of ethylenediamine. Crystals of Rb2Hg3Te4 were grown from solvothermal reactions using ethylenediamine as a solvent. Single crystal X-ray diffraction analysis shows that this compound belongs to the orthorhombic system, space group Pbcn (No. 60) with lattice parameters a = 12.177(2) A?, b = 7.245(2) A?, c = 14.545(2) A?, and Z = 4. The structure contains two-dimensional layers of ∞2[Hg3Te42-] which are separated by the Rb+ counterions. The interlayer Te-Te distances imply weak van der Waals interactions. Rb2Hg3Te4 is the first two-dimensional mercury telluride prepared by an unconventional low-temperature technique.

Kulifay, S. M.

, p. 4916 - 4919 (1961)

Bis(3-methyl-2-pyridyl)ditelluride and pyridyl tellurolate complexes of zinc, cadmium, mercury: Synthesis, characterization and their conversion to metal telluride nanoparticles

Kedarnath,Jain, Vimal K.,Wadawale, Amey,Dey, Gautam K.

, p. 8378 - 8385 (2010/03/04)

Treatment of an acetonitrile solution of metal chloride with bis(3-methyl-2-pyridyl)ditelluride, [Te2(pyMe)2], in the same solvent yielded complexes of composition [MCl2{Te 2(pyMe)2}] (M = Zn or Cd) w

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