13801-49-5

Basic information

• Product Name: TETRAKIS(DIETHYLAMINO)ZIRCONIUM
• Synonyms: Tetrakis(diethylaMino)zirconiuM(IV), 99%;Zirconium, tetrakis(diethylamino)-;TETRAKIS(DIETHYLAMINO)ZIRCONIUM;ZIRCONIUM DIETHYLAMIDE;TETRAKIS(DIETHYLAMIDO)ZIRCONIUM(IV), ELECTRONIC GRADE, 99.99+%;Tetrakis(diethylamino)zirkonium;Tetrakis(diethylamino)zirconium,99%;tetrakis(diethylamido)zirconium(iv)
• CAS NO: 13801-49-5
• Molecular Formula: 4C₄H₁₀N*Zr
• Molecular Weight: 379.74
• Product Categories: metal amide complex;Precursors by Metal;Vapor Deposition Precursors;Zirconium
• Mol File: 13801-49-5.mol

Chemical Properties

• Boiling Point: 128 °C0.05 mm Hg(lit.)
• Flash Point: 54 °F
• Appearance: yellow/liquid
• Density: 1.026 g/mL at 25 °C(lit.)
• Vapor Pressure: 218mmHg at 25°C
• Refractive Index: n20/D 1.51(lit.)
• Storage Temp.: water-free area
• Sensitive: Moisture Sensitive
• CAS DataBase Reference: TETRAKIS(DIETHYLAMINO)ZIRCONIUM(CAS DataBase Reference)
• NIST Chemistry Reference: TETRAKIS(DIETHYLAMINO)ZIRCONIUM(13801-49-5)
• EPA Substance Registry System: TETRAKIS(DIETHYLAMINO)ZIRCONIUM(13801-49-5)

Safety Data

• Hazard Codes: F,Xi
• Statements: 11-14-36/37/38
• Safety Statements: 16-26-36
• RIDADR: UN 3398 4.3/PG 2
• WGK Germany: 3
• HazardClass: 4.3
• PackingGroup: II
• Hazardous Substances Data: 13801-49-5(Hazardous Substances Data)

Usage

Uses

Used in Thin Film Deposition:
Tetrakis(diethylamino)zirconium is used as a precursor for the deposition of thin film ferroelectric materials by chemical vapor deposition (CVD). Its role in this process is crucial for creating high-quality films with desired properties.
Used in Olefin Polymer Production:
In the chemical industry, Tetrakis(diethylamino)zirconium is used as a catalyst precursor for the production of olefin polymers. Its application in this field contributes to the synthesis of various polymers with specific characteristics, enhancing their performance and applicability in different industries.
Used in ZrN Film Deposition:
Tetrakis(diethylamino)zirconium is employed as a precursor in the deposition of ZrN films using the remote plasma-enhanced atomic layer deposition (APEX) method. This application is essential for creating ZrN films with precise control over their thickness and properties, which are vital for various applications in the electronics and materials science industries.
Used in Organic Chemical Reactions:
As a catalytic precursor, Tetrakis(diethylamino)zirconium is also utilized in various organic chemical reactions. Its role in these reactions enables the synthesis of complex organic molecules with specific functionalities, which are essential for the development of new materials and pharmaceuticals.

Reference

Greenwald, Anton C. "CVD thin film compounds." US, US5104690. 1992. Murray, Rex Eugene. "Catalyst for the production of olefin polymers." US, US 6320005 B1. 2001. Cho, Seungchan, et al. "Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis (diethylamino) zirconium Precursor." Japanese Journal of Applied Physics 46. 7A (2007):4085-4088.

InChI:InChI=1/4C4H10N.Zr/c4*1-3-5-4-2;/h4*3-4H2,1-2H3;/q4*-1;+4

Downstream Products

• 7440-67-7 zirconium(IV) oxide 

Relevant articles and documents

Organometallic compound, its synthesis method, and solution raw material and metal-containing thin film containing the same

The organometallic compound of the present invention is a compound that has bonds between metal atoms and nitrogen atoms or bonds between semimetal atoms and nitrogen atoms, and the content of chlorine in the compound is 200 ppm or less and the content of water is 30 ppm or less. In addition, the general formula of this compound is represented by the following formula (1): M[(R1)2N](n?s)(R2)s??(1) wherein, M represents a metal atom or semimetal atom, with the metal atom being Hf, Zr, Ta, Ti, Ce, Al, V, La, Nb or Ni, and the semimetal atom being Si, R1 represents a methyl group or ethyl group, R2 represents an ethyl group, n represents the valence of M, and s represents an integer of 0 to n?1.