Welcome to LookChem.com Sign In|Join Free

CAS

  • or

7440-36-0

Post Buying Request

7440-36-0 Suppliers

Recommended suppliersmore

  • Product
  • FOB Price
  • Min.Order
  • Supply Ability
  • Supplier
  • Contact Supplier

7440-36-0 Usage

General Description

Antimony is a metalloid element with the atomic number 51 and the symbol Sb. It is a brittle, silvery-white metal that is commonly found in nature as a sulfide mineral. Antimony is used in a variety of industrial applications, including in the production of flame retardant materials, lead-acid batteries, and as an alloying agent in metal products. It is also used in the production of semiconductors, fireworks, and glass. Antimony compounds have been used for centuries in medicine and as a pigment in paints. However, antimony is also considered toxic and can cause health issues if ingested or inhaled in large quantities.

Check Digit Verification of cas no

The CAS Registry Mumber 7440-36-0 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 7,4,4 and 0 respectively; the second part has 2 digits, 3 and 6 respectively.
Calculate Digit Verification of CAS Registry Number 7440-36:
(6*7)+(5*4)+(4*4)+(3*0)+(2*3)+(1*6)=90
90 % 10 = 0
So 7440-36-0 is a valid CAS Registry Number.
InChI:InChI=1/Sb

7440-36-0 Well-known Company Product Price

  • Brand
  • (Code)Product description
  • CAS number
  • Packaging
  • Price
  • Detail
  • Alfa Aesar

  • (10095)  Antimony lump, 1.25cm (0.49in) & down, 99.5% (metals basis)   

  • 7440-36-0

  • 100g

  • 175.0CNY

  • Detail
  • Alfa Aesar

  • (10095)  Antimony lump, 1.25cm (0.49in) & down, 99.5% (metals basis)   

  • 7440-36-0

  • 500g

  • 644.0CNY

  • Detail
  • Alfa Aesar

  • (10095)  Antimony lump, 1.25cm (0.49in) & down, 99.5% (metals basis)   

  • 7440-36-0

  • 2kg

  • 1954.0CNY

  • Detail
  • Alfa Aesar

  • (14640)  Antimony powder, -200 mesh, 99.999% (metals basis)   

  • 7440-36-0

  • 1g

  • 141.0CNY

  • Detail
  • Alfa Aesar

  • (14640)  Antimony powder, -200 mesh, 99.999% (metals basis)   

  • 7440-36-0

  • 5g

  • 525.0CNY

  • Detail
  • Alfa Aesar

  • (14640)  Antimony powder, -200 mesh, 99.999% (metals basis)   

  • 7440-36-0

  • 25g

  • 1949.0CNY

  • Detail
  • Aldrich

  • (266329)  Antimony  powder, -100 mesh, 99.5% trace metals basis

  • 7440-36-0

  • 266329-250G

  • 513.63CNY

  • Detail

7440-36-0SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 16, 2017

Revision Date: Aug 16, 2017

1.Identification

1.1 GHS Product identifier

Product name Antimony

1.2 Other means of identification

Product number -
Other names Antymon

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only. Inorganic substances
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:7440-36-0 SDS

7440-36-0Synthetic route

antimony(III) sulfide

antimony(III) sulfide

antimony
7440-36-0

antimony

Conditions
ConditionsYield
With hydrogen In neat (no solvent) red heat;;100%
With H2 In neat (no solvent) red heat;;100%
With potassium ferrocyanide In melt under KCN;; impured with up to 3% Fe;;72%
antimony(III) trioxide

antimony(III) trioxide

antimony
7440-36-0

antimony

Conditions
ConditionsYield
With urea byproducts: H2O, CO2, N2; react. in a crucible over a low Meker flame, heating gently for 10 min; metal was extd. manually with a spatula;98%
With P3N5 In neat (no solvent) heating Sb2O3 with P3N5;;
Electrolysis; in melted mixt. of 2B2O3*Na2O and NaF at 800°C;
antimony(III) sulfide

antimony(III) sulfide

antimony
7440-36-0

antimony

Conditions
ConditionsYield
In water in an aq. soln. of potassium sulfide, 200-240°C, 60-85 MPa;97%
antimony(V) chloride
7647-18-9

antimony(V) chloride

A

antimony
7440-36-0

antimony

B

antimony(III) chloride
10025-91-9

antimony(III) chloride

Conditions
ConditionsYield
With hydrogen In neat (no solvent) in a reversed chlorine detonating gas flame;;A 93%
B 7%
antimony(III) chloride
10025-91-9

antimony(III) chloride

antimony
7440-36-0

antimony

Conditions
ConditionsYield
With sodium hydroxide; isopropyl alcohol In water other Radiation; NaOH soln. dropping into Sb-salt soln. (hydrolysis prevention, PVA or SDS as surfactant, i-PrOH as scavenger of OH radicals ), bubbling with N2 for 1 h, irradiation in a field of 70000 Ci (60)Co γ-ray source, 8.82E+4 Gy radiation dose, pptn.; ppt. filtration off, washing (water, alcohol), vac. drying at 60°C; optical microscopy;70%
With sodium hydroxide; isopropyl alcohol In water other Radiation; NaOH soln. dropping into Sb-salt soln. (hydrolysis prevention, PVA or SDS as surfactant, i-PrOH as scavenger of OH radicals ), bubbling with N2 for 1 h, irradiation in a field of 70000 Ci (60)Co γ-ray source, 6.24E+4 Gy radiation dose, pptn.; ppt. filtration off, washing (water, alcohol), vac. drying at 60°C; optical microscopy;62%
With sodium hydroxide; isopropyl alcohol In water other Radiation; NaOH soln. dropping into Sb-salt soln. (hydrolysis prevention, PVA or SDS as surfactant, i-PrOH as scavenger of OH radicals ), bubbling with N2 for 1 h, irradiation in a field of 70000 Ci (60)Co γ-ray source, 5.14E+4 Gy radiation dose, pptn.; ppt. filtration off, washing (water, alcohol), vac. drying at 60°C; optical microscopy;45%
cobalt(II) oxide
1307-96-6

cobalt(II) oxide

antimony(III) trioxide

antimony(III) trioxide

A

antimony
7440-36-0

antimony

B

cobalt antimonide

cobalt antimonide

Conditions
ConditionsYield
With Na2CO3 In melt Electrolysis; (N2); at 650-700°C; voltages 3-5 V; current 1 A; graphite electrodes; 95 mol.% metaantimonate in the melt;A 70%
B 29%
triphenylantimony
603-36-1

triphenylantimony

trifluoroacetic acid
76-05-1

trifluoroacetic acid

A

antimony
7440-36-0

antimony

B

triphenylantimony bis(trifluoroacetate)
36971-66-1

triphenylantimony bis(trifluoroacetate)

Conditions
ConditionsYield
In benzene reflux for 2 h;A n/a
B 62%
In benzene reflux for 2 h;A n/a
B 62%
antimony(III) trioxide

antimony(III) trioxide

antimony(III) sulfide

antimony(III) sulfide

A

antimony
7440-36-0

antimony

B

sulfur dioxide
7446-09-5

sulfur dioxide

Conditions
ConditionsYield
by heating in inert gas flow;A n/a
B 50%
by heating in inert gas flow;A n/a
B 50%
antimony(III)tris(oxalato)antimonate(III) dihydrate

antimony(III)tris(oxalato)antimonate(III) dihydrate

A

antimony(III) trioxide

antimony(III) trioxide

B

antimony
7440-36-0

antimony

C

antimony suboxide

antimony suboxide

Conditions
ConditionsYield
In neat (no solvent) Kinetics; byproducts: H2O, CO, CO2; sample heating in DSC apparatus in dynamic N2 at 10 K/min up to 670°C; DSC, XRD;A 1%
B n/a
C n/a
(99)Ge0965(00)Sb0035

(99)Ge0965(00)Sb0035

A

germanium
7440-56-4

germanium

B

antimony
7440-36-0

antimony

Conditions
ConditionsYield
In neat (no solvent) Kinetics; decompn. on heating to 670-770K;; X-ray microspectral and microstructural investigation; solid mixture obtained;;
In melt Kinetics; decompn. on heating to 860-870K;; X-ray microspectral and microstructural investigation; liquid mixture obtained;;
Sb4Ge3O12

Sb4Ge3O12

A

antimony
7440-36-0

antimony

B

germanium dioxide

germanium dioxide

Conditions
ConditionsYield
With isopropyl alcohol In isopropyl alcohol High Pressure; interaction in autoclave with supercritical isopropanol; identified by X-ray diffraction;
cobalt antimonide

cobalt antimonide

antimony(III) chloride
10025-91-9

antimony(III) chloride

A

antimony
7440-36-0

antimony

B

cobalt(II) chloride
7646-79-9

cobalt(II) chloride

Conditions
ConditionsYield
In neat (no solvent) below 800 °C very slow reactn., above 1000 °C very lively reactn.;;
In neat (no solvent) below 800 °C very slow reactn., above 1000 °C very lively reactn.;;
antimony(III) chloride
10025-91-9

antimony(III) chloride

LiC(P(C6H5)2)2(Si(CH3)3)

LiC(P(C6H5)2)2(Si(CH3)3)

antimony
7440-36-0

antimony

Conditions
ConditionsYield
In tetrahydrofuran byproducts: Ph2P(Cl)=C(PPh2)(SiMe3); N2 atm.; cooling (-78°C to room temp.), stirring (12 h);
Sodium borate

Sodium borate

antimony(III) sulfide

antimony(III) sulfide

sodium fluoride

sodium fluoride

antimony
7440-36-0

antimony

Conditions
ConditionsYield
In melt Electrolysis; 800 °C;; contains only traces of S;;
In melt Electrolysis; 800 °C;; contains only traces of S;;
selenium
7782-49-2

selenium

galium antimonide

galium antimonide

A

antimony
7440-36-0

antimony

B

gallium selenide

gallium selenide

Conditions
ConditionsYield
equilibrium;
equilibrium;
selenium
7782-49-2

selenium

galium antimonide

galium antimonide

A

antimony
7440-36-0

antimony

B

gallium(I) selenide

gallium(I) selenide

Conditions
ConditionsYield
equilibrium;
equilibrium;
selenium
7782-49-2

selenium

galium antimonide

galium antimonide

A

antimony
7440-36-0

antimony

B

gallium(II) selenide

gallium(II) selenide

Conditions
ConditionsYield
equilibrium;
equilibrium;
antimony(III) sulfide

antimony(III) sulfide

potassium nitrate

potassium nitrate

A

antimony
7440-36-0

antimony

B

antimony(V) sulfide

antimony(V) sulfide

Conditions
ConditionsYield
deflagration;;
lead(II) sulfide

lead(II) sulfide

antimony(III) sulfide

antimony(III) sulfide

A

lead
7439-92-1

lead

B

antimony
7440-36-0

antimony

C

antimony subsulfide

antimony subsulfide

D

sulfur
7704-34-9

sulfur

Conditions
ConditionsYield
in gaseous phase;
lead(II) sulfide

lead(II) sulfide

antimony(III) sulfide

antimony(III) sulfide

A

antimony
7440-36-0

antimony

falkmanite

falkmanite

Conditions
ConditionsYield
With hydrogen sulfide in H2-H2S atm. at 400°C PbS:Sb2S3 mol. ratio 1-6:1; H2S in 22.0%; equilibrium;
With H2S in H2-H2S atm. at 400°C PbS:Sb2S3 mol. ratio 1-6:1; H2S in 22.0%; equilibrium;
lead(II) sulfide

lead(II) sulfide

antimony(III) sulfide

antimony(III) sulfide

A

antimony
7440-36-0

antimony

falkmanite

falkmanite

boulangerite

boulangerite

Conditions
ConditionsYield
With hydrogen sulfide in H2-H2S atm. at 400°C PbS:Sb2S3 mol. ratio 1-6:1; H2S in 24.7%; equilibrium;
With H2S in H2-H2S atm. at 400°C PbS:Sb2S3 mol. ratio 1-6:1; H2S in 24.7%; equilibrium;
lead(II) sulfide

lead(II) sulfide

antimony(III) sulfide

antimony(III) sulfide

A

antimony
7440-36-0

antimony

B

5PbS*3Sb2S3=Pb5Sb6S14

5PbS*3Sb2S3=Pb5Sb6S14

C

7PbS*5Sb2S3=Pb7Sb10S22

7PbS*5Sb2S3=Pb7Sb10S22

Conditions
ConditionsYield
With hydrogen sulfide in H2-H2S atm. at 400°C PbS:Sb2S3 mol. ratio 1-6:1; H2S in 33.6%; equilibrium;
With H2S in H2-H2S atm. at 400°C PbS:Sb2S3 mol. ratio 1-6:1; H2S in 33.6%; equilibrium;
lead(II) sulfide

lead(II) sulfide

antimony(III) sulfide

antimony(III) sulfide

A

antimony
7440-36-0

antimony

B

5PbS*3Sb2S3=Pb5Sb6S14

5PbS*3Sb2S3=Pb5Sb6S14

boulangerite

boulangerite

Conditions
ConditionsYield
With hydrogen sulfide in H2-H2S atm. at 400°C PbS:Sb2S3 mol. ratio 1-6:1; H2S in 30.1%; equilibrium;
With H2S in H2-H2S atm. at 400°C PbS:Sb2S3 mol. ratio 1-6:1; H2S in 30.1%; equilibrium;
lead(II) sulfide

lead(II) sulfide

antimony(III) sulfide

antimony(III) sulfide

A

antimony
7440-36-0

antimony

B

5PbS*4Sb2S3=Pb5Sb8S17

5PbS*4Sb2S3=Pb5Sb8S17

C

7PbS*5Sb2S3=Pb7Sb10S22

7PbS*5Sb2S3=Pb7Sb10S22

Conditions
ConditionsYield
With hydrogen sulfide in H2-H2S atm. at 400°C PbS:Sb2S3 mol. ratio 1-6:1; H2S in 35.9%; equilibrium;
With H2S in H2-H2S atm. at 400°C PbS:Sb2S3 mol. ratio 1-6:1; H2S in 35.9%; equilibrium;
lead(II) sulfide

lead(II) sulfide

antimony(III) sulfide

antimony(III) sulfide

A

antimony
7440-36-0

antimony

B

5PbS*4Sb2S3=Pb5Sb8S17

5PbS*4Sb2S3=Pb5Sb8S17

C

Pb(SbS2)2

Pb(SbS2)2

Conditions
ConditionsYield
With hydrogen sulfide in H2-H2S atm. at 400°C PbS:Sb2S3 mol. ratio 1-6:1; H2S in 37.0%; equilibrium;
With H2S in H2-H2S atm. at 400°C PbS:Sb2S3 mol. ratio 1-6:1; H2S in 37.0%; equilibrium;
lead(II) sulfide

lead(II) sulfide

antimony(III) sulfide

antimony(III) sulfide

A

antimony
7440-36-0

antimony

B

Pb(SbS2)2

Pb(SbS2)2

Conditions
ConditionsYield
With hydrogen sulfide in H2-H2S atm. at 400°C PbS:Sb2S3 mol. ratio 1-6:1; H2S in 39.8%; equilibrium;
With H2S in H2-H2S atm. at 400°C PbS:Sb2S3 mol. ratio 1-6:1; H2S in 39.8%; equilibrium;
K(1+)*{C4H2O6SbH2O}(1-)=K{C4H2O6Sb(H2O)}

K(1+)*{C4H2O6SbH2O}(1-)=K{C4H2O6Sb(H2O)}

antimony
7440-36-0

antimony

Conditions
ConditionsYield
In not given Electrolysis; electrodeposition of Sb (ionic strength = 0.54 (KNO3));
antimony(III) chloride
10025-91-9

antimony(III) chloride

potassium
7440-09-7

potassium

A

antimony
7440-36-0

antimony

B

potassium chloride

potassium chloride

Conditions
ConditionsYield
In toluene reactn. in boiling toluene soln.;;
In toluene reactn. in boiling toluene soln.;;
antimony
7440-36-0

antimony

osmium

osmium

OsSb2

OsSb2

Conditions
ConditionsYield
at 1150℃; Sealed tube;100%
melting in an evacuated quartz tube, annealing between 800 and 1000°C;
melting in an evacuated quartz tube, annealing between 800 and 1000°C;
in evacuated quartz tube;
at 999.84℃; Inert atmosphere;
gallium
7440-55-3

gallium

germanium
7440-56-4

germanium

antimony
7440-36-0

antimony

Ge#dotGa#dotSb

Ge#dotGa#dotSb

Conditions
ConditionsYield
In neat (no solvent) Ge, Ga and Sb placed in evacuated (1E-2 Pa), sealed quartz ampoules, annealed (800°C, 1400 h); single phase (microstructural analysis), samples prepared with total of 0.25 at.% dopant (Ge = 99.75 at.%) and others with total dopant content of 5 E19 cm-3, also Ge:Sb = 3:1, 1:1 and 1:3;100%
indium
7440-74-6

indium

antimony
7440-36-0

antimony

indium(III) antimonide

indium(III) antimonide

Conditions
ConditionsYield
In neat (no solvent) In, Sb evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 500.+-.20°C, 70h or heated at 400.+-.20°C, 110h;100%
In melt crystn. from the melt with nearly stoichiometric composition;; single crystals obtained;;
In neat (no solvent) High Pressure; 0.7 GPa, laser heating;
antimony
7440-36-0

antimony

sulfur
7704-34-9

sulfur

antimony(III) sulfide

antimony(III) sulfide

Conditions
ConditionsYield
In melt melting of Sb and S at 450-500 °C gives complete reaction; slow cooling;;100%
heating;
mixt. fusing (evac. quartz ampoule); vac. sublimation;
antimony
7440-36-0

antimony

antimony(III) trioxide

antimony(III) trioxide

Conditions
ConditionsYield
With air at 800°C from melted metal; filtering;100%
With carbon dioxide byproducts: CO; at 830-1100°C;
Electrolysis; at Sb anode;
europium

europium

manganese
7439-96-5

manganese

antimony
7440-36-0

antimony

Eu10Mn6Sb13

Eu10Mn6Sb13

Conditions
ConditionsYield
With tin at 999.84℃; for 36h; Glovebox; Inert atmosphere;100%
In further solvent(s) Sn, Eu, Mn, and Sb layered into an alumina crucible, placed into a fusedsilica tube with a 2-nd crucible filled with SiO2 wood placed on top, s ealed under Ar, heated slowly to 500°C, allowed to dwell for 1 h,heated slowly to 1100°C,; the react. vessel slowly cooled to 600°C, removed, inverted, placed into a centrifuge, spun for 1 min at 6500 rpm;
In further solvent(s) Sn, Eu, Mn, and Sb placed in a graphite tube, vac.-sealed in a fused silica tube, heated to 1000°C slowly, held at 1000°C for 24 h, cooled to 550°C slowly, held at 550°C for 4 d, cooled toroom temp. slowly;
antimony
7440-36-0

antimony

sodium
7440-23-5

sodium

rubidium

rubidium

Na16(RbRb6)Sb7

Na16(RbRb6)Sb7

Conditions
ConditionsYield
In neat (no solvent) byproducts: RbSb; molar ratio Na:Rb:Sb stoichiometric to 2:1:1; heating (12 h to 873 K; 120 h, 873 K), cooling (48 h, room temp.); XRD;100%
germanium
7440-56-4

germanium

antimony
7440-36-0

antimony

germanium doped with antimony

germanium doped with antimony

Conditions
ConditionsYield
In neat (no solvent) Ge and Sb placed in evacuated (1E-2 Pa), sealed quartz ampoules, annealed (800°C, 1400 h); single phase (microstructural analysis), dopant content of 5 E19 cm-3;100%
In neat (no solvent) evapg. Ge with Sb;; coating;;
In neat (no solvent) Ge single crystals homogenized with Sb at 970 K for 1450 h in sealed quartz ampule evacuated (1.3E-3 Pa);
gallium
7440-55-3

gallium

antimony
7440-36-0

antimony

galium antimonide

galium antimonide

Conditions
ConditionsYield
In neat (no solvent) Ga, Sb evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 580.+-.20°C, 140h;100%
melting in a quartz crucible in flowing hydrogen (purified over Pd, flow rate 70 ml/min); for compensation of evapn. of Sb, 0.1% excess Sb was applied;;
In neat (no solvent) Sb/Ga flux ratio was approx. 8.5, GaAs(001) as substrate, mol. beam epitaxy;
antimony
7440-36-0

antimony

zirconium
7440-67-7

zirconium

nickel
7440-02-0

nickel

ZrNiSb

ZrNiSb

Conditions
ConditionsYield
In neat (no solvent) Electric Arc; heating (650°C, 4 d; dynamic Ar atm., arc melting), annealing (5 h, 1050-1200°C);100%
In neat (no solvent) vac. (5E-3 mbar); stoichiometric ratio, heating (1 week, 1100°C);
In melt Electric Arc; arc melted under Ar gettered with Ti; 5 wt.-% of Sb required to compensate evaporative losses during arc-melting; ingots sealed in evacuated fused-silica tubes and annealed at 870 K for 720 h; quenched in cold water; XRD; EDX;
antimony
7440-36-0

antimony

praseodymium(III) bromide
13536-53-3

praseodymium(III) bromide

Pr5Sb3Br

Pr5Sb3Br

Conditions
ConditionsYield
In neat (no solvent) (N2), heating (950°C, 2 weeks);100%
hafnium

hafnium

antimony
7440-36-0

antimony

nickel
7440-02-0

nickel

HfNiSb

HfNiSb

Conditions
ConditionsYield
In neat (no solvent) Electric Arc; heating (650°C, 4 d; dynamic Ar atm., arc melting);100%
In neat (no solvent) Electric Arc; repeated remelting, annealing in evac. quartz tube for 250 h at 800°C, quenching (cold water);
germanium
7440-56-4

germanium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.4Sn0.4Sb0.13Te

Ge0.4Sn0.4Sb0.13Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0286Sn0286In0143Sb0143Te

Ge0286Sn0286In0143Sb0143Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.72Sn0.08In0067Sb0067Te

Ge0.72Sn0.08In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.24Sn0.56In0067Sb0067Te

Ge0.24Sn0.56In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.08Sn0.72In0067Sb0067Te

Ge0.08Sn0.72In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.4Sn0.4In0067Sb0067Te

Ge0.4Sn0.4In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.35Sn0.35In0.1Sb0.1Te

Ge0.35Sn0.35In0.1Sb0.1Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.5Sn0.5InSbTe4

Ge0.5Sn0.5InSbTe4

Conditions
ConditionsYield
at 550 - 950℃; for 240h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

GeSnInSbTe5

GeSnInSbTe5

Conditions
ConditionsYield
at 350 - 950℃; for 240h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.8In0067Sb0067Te

Ge0.8In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
antimony
7440-36-0

antimony

tellurium

tellurium

Sn0.8Sb0.13Te

Sn0.8Sb0.13Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Sn0.8In0067Sb0067Te

Sn0.8In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
antimony
7440-36-0

antimony

nitric acid
7697-37-2

nitric acid

antimony pentoxide

antimony pentoxide

Conditions
ConditionsYield
In water byproducts: NO2; Sb powder was covered with concd. nitric acid, heated under an open hood and over a bunsen burner flame, solid was filtered, washed with water,left to dry, heated in open beaker over a bunsen burner flame;99.729%
antimony
7440-36-0

antimony

barium
7440-39-3

barium

Ba11Sb10

Ba11Sb10

Conditions
ConditionsYield
In melt Electric Arc; 1:1-mixt. of Sr and Sb;99%
In melt under Ar; mixt. of Ba (12.43 mmol) and Sb (8.276) heated to 850°Cwith 200°C/h, cooled to room temp. with 100°C/h;
In melt 5:4-mixt. of Ba and Sb heated in alumina or Ta-crucible to 1100°C, kept at this temp. for ca. 1 h, cooled with 50-100°C/h;
bismuth
7440-69-9

bismuth

antimony
7440-36-0

antimony

mercury

mercury

mercury dibromide

mercury dibromide

Hg6Sb4(4+)*BiBr6(3-)*Br(1-)=Hg6Sb4BiBr7

Hg6Sb4(4+)*BiBr6(3-)*Br(1-)=Hg6Sb4BiBr7

Conditions
ConditionsYield
In neat (no solvent) mixt. of HgBr2, Hg, Sb, Bi (molar ratio 7/5/8/2) was heated in sealed evacuated glass ampoule at temp. 270-290°C, after seven days ppt. was deposited on colder part of ampoule; XRD;99%
germanium
7440-56-4

germanium

antimony
7440-36-0

antimony

ytterbium

ytterbium

Yb8Ge3Sb5

Yb8Ge3Sb5

Conditions
ConditionsYield
In neat (no solvent, solid phase) Electric Arc; mixt. of 1 mmol of Yb, 0.38 mmol of Ge and 0.63 mmol of Sb cold pressed into pellet, arc melting, annealed at 750°C for 1 week; elem. anal.;99%
In neat (no solvent, solid phase) Yb, Ge and Sb combined, pressed into pellet, loaded in carbon-coated quartz tube, heated to 850°C in 10 h, held at 850°C for 72 h,cooled to 50°C in 12 h;
antimony
7440-36-0

antimony

thallium

thallium

mercury

mercury

mercury dibromide

mercury dibromide

Hg3Sb2TlBr3

Hg3Sb2TlBr3

Conditions
ConditionsYield
In neat (no solvent, solid phase) Hg, HgBr2, Sb and Tl in molar ratio 3:3:4:2 sealed in glass ampoule, heated at 300°C for 48 h; cooled to 260°C;99%

7440-36-0Relevant articles and documents

A facile route to fabricate single-crystalline antimony nanotube arrays

Li, Liang,Xiao, Yanhe,Yang, Youwen,Huang, Xiaohu,Li, Guanghai,Zhang, Lide

, p. 930 - 931 (2005)

Single-crystalline antimony nanotube arrays are fabricated in the anodic alumina membranes using the pulsed electrodeposition technique for the first time. The thickness of Au layer sputtered on the anodic alumina membrane and the pulsed electrode-position technique are two key factors to produce single-crystalline nanotubes. Copyright

Thermal behavior of antimony nanowire arrays embedded in anodic aluminum oxide template

Zhang,Ding,Zhang,Hao,Meng,Zhang

, p. 493 - 497 (2007)

Highly oriented single crystal antimony nanowire arrays have been synthesized within anodic aluminum oxide (AAO) template by pulsed electrodeposition. Thermal behavior and oxidation analysis of the antimony nanowires have been investigated by means of thermogravimetry and differential scanning calorimetry in Ar and air atmosphere, respectively. Compared to bulk antimony, the antimony nanowires exhibit a lower sublimation temperature at 496.4°C. Evident oxidation of the Sb nanowires occurs at 429.8°C in air atmosphere and α-Sb2O4 nanowires have been obtained as the oxidation product. The results indicate that the sublimation and the oxidation of the antimony nanowires in the AAO template is a slow multi-step process. The present results are of relevance when processing antimony nanowries for thermoelectric applications at high temperatures.

Solution synthesis of a new thermoelectric Zn1+ xSb nanophase and its structure determination using automated electron diffraction tomography

Birkel, Christina S.,Mugnaioli, Enrico,Gorelik, Tatiana,Kolb, Ute,Panthoefer, Martin,Tremel, Wolfgang

, p. 9881 - 9889 (2010)

Engineering materials with specific physical properties have recently focused on the effect of nanoscopic inhomogeneities at the 10 nm scale. Such features are expected to scatter medium- and long-wavelength phonons thereby lowering the thermal conductivity of the system. Low thermal conductivity is a prerequisite for effective thermoelectric materials, and the challenge is to limit the transport of heat by phonons, without simultaneously decreasing charge transport. A solution-phase technique was devised for synthesis of thermoelectric Zn4Sb3 nanocrystals as a precursor for phase segregation into ZnSb and a new Zn-Sb intermetallic phase, Zn 1+δSb, in a peritectoid reaction. Our approach uses activated metal nanoparticles as precursors for the synthesis of this intermetallic compound. The small particle size of the reactants ensures minimum diffusion paths, low activation barriers, and low reaction temperatures, thereby eliminating solid-solid diffusion as the rate-limiting step in conventional bulk-scale solid-state synthesis. Both phases were identified and structurally characterized by automated electron diffraction tomography combined with precession electron diffraction. An ab initio structure solution based on electron diffraction data revealed two different phases. The new pseudo-hexagonal phase, Zn1+δSb, was identified and classified within the structural diversity of the Zn-Sb phase diagram.

Cohn, G.,Goodeve, C. F.

, p. 433 (1940)

Antimony film electrode for direct cathodic measurement of sulfasalazine

Nigovi?, Biljana,Hocevar, Samo B.

, p. 523 - 527 (2011)

The antimony film electrode (SbFE) is presented for the first time for direct cathodic voltammetric measurement of an organic compound, i.e. sulfasalazine, which has been chosen due to its aptness for electrochemical reduction and its great importance as a pharmaceutical product. The SbFE was prepared ex situ on the surface of a glassy carbon supporting electrode and several important parameters were studied and optimized, such as preparation of the SbFE, stripping voltammetric settings, pH of the measurement solution, etc. In addition, the electroanalytical performance of the SbFE was compared to its bismuth counterpart and bare glassy carbon electrode. The SbFE exhibited excellent linear dependence in the examined concentration range of 3 × 10-6-2.5 × 10-4 M together with the detection limit of 7.8 × 10-7 M and good reproducibility with the RSD of ±0.7%. Finally, the applicability of the SbFE was successfully demonstrated through convenient measurements of sulfasalazine in its dosage forms of sulfasalazine delayed-release tablets.

Chalcogenolato Complexes of Bithmuth and Antimony. Syntheses, Termolysis Reactions, and Crystal Structure of Sb(SC6H2(i-Pr)3-2,4,6)3

Bochmann, Manfred,Song, Xuejing,Hursthouse, Michael B.,Karaulov, Alexander

, p. 1649 - 1652 (1995)

Antimony(III) and bismuth(III) complexes of sterically demanding arenechalcogenolato ligands, M(EC6H2R'3-2,4,6)3 (E = S or Se; M = Sb or Bi; R' = Me, i-Pr or t-Bu) have been prepared by either protolysis of the amides M3 with arenechalcogenols, or from MCl3 by halide exchange (M = Bi or Sb).The complexes are monomeric in the solid state and sublime readily.The crystal structure of Sb(SC6H2(i-Pr)3-2,4,6)3 has been determined by X-ray diffraction.The compound possesses a trigonal-pyramidal geometry, with Sb-S distances of 2.418(2)-2.438(2) Angstroem and S-Sb-S angles of 94.69(7)-98.29(8) deg.Preliminary X-ray results on Bi(SeC6H2(i-Pr)3-2,4,6)3 showed that the compounds of Sb and Bi are isostructural.Thermolytic decomposition of some of the compounds has been carried out in the solid state.Compounds with R' = Me or i-Pr undergo reductive elimination to give elemental bismuth or antimony, whereas the bulky selenolates M(SeC6H2(t-Bu)3-2,4,6)3 afford M2Se3.

Phase stability and thermoelectric properties of Cu10.5Zn1.5Sb4S13 tetrahedrite

Harish, Subramaniam,Sivaprahasam, Duraisamy,Battabyal, Manjusha,Gopalan, Raghavan

, p. 323 - 328 (2016)

Cu10.5Zn1.5Sb4S13 tetrahedrite compound was prepared by mechanical milling of Cu2S, ZnS and Sb2S3 powders and spark plasma sintered (SPS) to dense samples. The phase formation, chemical homogeneity, thermal stability of the compound and the thermoelectric properties of the sintered samples were evaluated. Single phase tetrahedrite with the crystallite size of 40 nm was obtained after 30 h of milling followed by annealing at 573 K for 6 h in an argon atmosphere. In-situ high-temperature X-ray diffraction studies revealed that the phase is stable up to 773 K. The Seebeck coefficient of the sintered samples of density >98% shows p-type behavior with maximum thermopower of 170 μV/K at 573 K. The electrical resistivity (ρ) decreases with temperature up to 475 K and then increases. A low thermal conductivity of 0.5 W/(m?K), in combination with moderate power factor gave a maximum ZT of ~0.038 at 573 K in Cu10.5Zn1.5Sb4S13 sample having a grain size of ~200 nm.

Thermoelectric properties of the Ru2Ni2Sb 12 ternary skutterudite

Navratil, Jiri,Laufek, Frantisek,Plechacek, Tomas,Drasar, Cestmir

, p. 2 - 7 (2012)

The synthesis of the Ru2-xNi2-xSb12 compounds (0≤x≤0.2), their structural characterization and temperature dependencies of selected transport and thermal properties are reported. At x=0, Ru2-xNi2-xSb12 displays cubic symmetry, space group Im3 with lattice parameter a=9.1767(1) A. From increasing electrical conductivity above 600 K the band gap (Eg~0.06 eV) was estimated using an Arrhenius plot. Different signs of the Seebeck coefficient (negative) and the Hall coefficient (positive) have been explained as a consequence of a multicarrier transport. The substitution on a cation site, i.e., formation of the Ru2-xNi2-xSb12 ternary skutterudites proved to be effective way in suppressing of the thermal conductivity.

Synthesis and Structural Evolution of RuSb3, a New Metastable Skutterudite Compound

Smalley, Arwyn L. E.,Jespersen, Michael L.,Johnson, David C.

, p. 2486 - 2490 (2004)

A thin-layer synthesis technique was used to synthesize bulk amounts of the metastable phase, RuSb3, a novel compound with the skutterudite structure. The compound crystallized at 350 °C and was stable to 525 °C. When annealed above 550 °C, it decomposed into RuSb2 and Sb. Rietveld refinement of X-ray diffraction data showed the presence of excess Sb residing in the interstitial site in the skutterudite structure. X-ray diffraction and thermal analysis experiments allowed us to examine the evolution of the sample as a function of annealing and determine the reaction pathway. The activation energy for the crystallization of the compound was determined to be 3 eV/nucleation event, while the activation energy for decomposition was approximately 8 eV.

Nanoscale electrocrystallisation of Sb and the compound semiconductor AlSb from an ionic liquid

Aravinda,Freyland

, p. 1703 - 1705 (2006)

Aluminium antimonide nanoclusters with an apparent band gap energy of 0.92 ± 0.2 eV have been electrodeposited from the neutral ionic melt AlCl 3-1-butyl-3-methylimidazolium chloride {AlCl3-[C 4mim]+Cl-/su

Hovorka, F.,Chapman, G. H.

, p. 955 - 2024 (1941)

Thermally stable thermoelectric Zn4 Sb3 by zone-melting synthesis

Pedersen,Iversen

, (2008)

The thermal stability of thermoelectric Zn4 Sb3 has been investigated on samples produced by a new zone-melting technique, as well as by the conventional quench method. The multitemperature synchrotron powder diffraction data reveal that while conventionally synthesized, Zn4 Sb3 samples have almost 40% degradation in the first heating cycle at 625 K, samples prepared by zone melting only have 3% degradation. Repeated thermal cycling induces additional degradation of the quenched sample of up to 58%, compared to ~9% degradation in the zone-melted sample. Thus, zone-melting produces Zn4 Sb3 samples that are significantly more thermally stable, which make them promising for commercial implementation.

A rational complexing-reduction route to antimony nanotubes

Hu, Hanmei,Mo, Maosong,Yang, Baojun,Shao, Mingwang,Zhang, Shuyuan,Li, Qiaowei,Qian, Yitai

, p. 1161 - 1163 (2003)

Antimony nanotubes with inner diameters of 15-80 nm, wall thickness of 10-30 nm and lengths of up to several micrometers have been successfully prepared by a rational complexing-reduction route using zinc powder as reductant at low temperature (80-140°C).

Cohn, G.,Hedvall, J. A.

, p. 603 - 607 (1943)

Soft-Chemical Method for Synthesizing Intermetallic Antimonide Nanocrystals from Ternary Chalcogenide

Jiang, Yilan,Yuan, Long,Xu, Yanyan,Ma, Jiaojiao,Sun, Yu,Gao, Xia,Huang, Keke,Feng, Shouhua

, p. 15131 - 15136 (2019)

The synthesis of intermetallic antimonides usually depends on either the high-temperature alloying technique from high-purity metals or the flux method in highly poisonous Pb-melt. In this paper, we introduced a soft-chemical method to synthesize intermetallic antimonides from ternary chalcogenide precursors under an argon atmosphere below 200 °C. Powder X-ray diffraction and compositional analysis clearly indicate that a new phase of the Ag3Sb nanocrystal was synthesized from the Ag3SbS3 precursors. Three types of trialkylphosphines (TAPs) were applied as desulfurization agents, and the transformation mechanism was elucidated. The capability of the desulfurization agent follows the sequence of triphenylphosphine (TPP) > tributylphosphine (TBP) > trioctylphosphine (TOP). Besides, this TAP-driven desulfurization route to synthesize the intermetallic phase could also be possible for AgSbSe2 and Sb2S3. Therefore, this paper provides an efficient and mild technique for the fabrication of intermetallic nanocrystals.

Thermal reduction of mechanically activated cinnabar (HgS) and stibnite (Sb2S3)

Balaz,Godocikova

, p. 51 - 57 (2001)

The reduction of cinnabar (HgS) and stibnite (Sb2S3) by hydrogen was investigated. These investigations were performed in the temperature region 636-765 K for cinnabar and in the region 825-954 K for stibnite. It has appeared that the mechanical activation positively affects the thermal reduction of the sulphides. The thermal decomposition of HgS is accompanied by a change in mechanism taking place at 744 K. As to Sb2S3, the change in mechanism in the investigated temperature region was not observed.

Mechanism of formation and electronic structure of semiconducting ZnSb nanoclusters electrodeposited from an ionic liquid

Mann, Olivier,Freyland, Werner

, p. 518 - 524 (2007)

Electrocrystallization of Sb and the compound semiconductor ZnSb has been investigated by in situ SPM methods at the electrified ionic liquid/Au(1 1 1) interface at an elevated temperature of 50 °C for the first time employing the ionic liquid ZnCl2-[C4mim]+Cl- (45:55). Prior to the underpotential deposition (UPD) process of Sb, ZnCl3- anions adsorb on the gold surface at the open-circuit potential (OCP). An ordered region - showing the characteristic of a Moire?-like pattern - coexists with a disordered region indicative of an interfacial phase transition. When the potential is reduced to -0.40 V versus Pt/Pt(II), 2D electrocrystallization of Sb starts showing a typical fenced(sqrt(3) × sqrt(3)) structure of the first monolayer. Further decreasing the potential to -0.5 V a second layer of Sb islands occurs. Stepping the potential from the UPD region to -0.60 V, the OPD of Sb sets in showing randomly dispersed clusters of homogeneous size. Near the ZnSb deposition potential, at ~-0.95 V, a nearly homogeneous distribution of clusters of spherical shape with diameters up to 15 nm is found. Their corresponding STS curves exhibit an obvious semiconducting behaviour with a gap-energy of ~0.6 ± 0.2 eV. Experiments at deposition conditions on the Sb-rich or Zn-rich side relative to the ZnSb deposition potential show an obvious doping effect - in the case of Zn excess - which is revealed by the corresponding normalized conductance (NC) spectra.

Konopik, N.,Werner, E.

, (1950)

Characterization of CuSbSe2 crystallites synthesized using a hot injection method

Hsiang, Hsing-I.,Yang, Chang-Ting,Tu, Jui-Huan

, p. 99297 - 99305 (2016)

In this study, a novel and facile hot injection method for the synthesis of single phase CuSbSe2 crystallites was developed by using low toxic triethylene glycol (TEG) as both the solvent and reducing agent and triethylenetetramine (TETA) as co-reducing agent. The effects of the amounts of TETA addition and reaction temperatures on the phase development were investigated. The crystalline structures, morphologies, chemical compositions and optical characterization of the synthesized products were investigated using XRD, TEM, EDS, XPS, and UV-Vis-NIR. A single phase CuSbSe2 crystallites can be obtained by using triethylene glycol as the solvent and reducing agent and triethylenetetramine as co-reducing agent. TETA addition plays a key role in determining the final phase. The presence of the intermediate phase, Cu3SbSe4 phase could be due to the existence of Cu2+, resulting from the insufficient reducibility in the solution. A sufficient amount of TETA can facilitate the reduction of Cu2+ into Cu+, leading to the preformed Cu3SbSe4 phase dissolved and reacted with Sb2Se3 to form CuSbSe2. The obtained CuSbSe2 phase had a direct band gap with the band gap value of 1.06 eV.

In situ TEM observation of synergistic electronic-excitation-effects of phase stability in III-V binary compound nanoparticles

Yasuda,Tanaka,Usui,Mori,Lee

, p. 177 - 180 (2007)

Electronic-excitation-effects of phase stability in III-V binary compound nanoparticles have been studied by TEM. When GaSb particles were excited by 75 keV electrons, the compound transforms to a two-phase consisting of an antimony core and a gallium shell or an amorphous phase, or remains the original crystalline phase, depending on particle size and/or temperature. It is suggested that such nonlinear responses of the phase stability may arise from synergistic effects of bond instability under excited states, formation of high density of excited states, chemical equilibrium under excited states and temperature dependence of defects mobility. EDP Sciences/Societa? Italiana di Fisica/Springer-Verlag 2007.

Large-scale growth of hollow Sb microspheres

Zhang, Wanqun,Xu, Liqiang,Xi, Guangchen,Yu, Weichao,Qian, Yitai

, p. 1476 - 1477 (2004)

Uniform hollow antimony micron spheres were synthesized on a large scale using SbCl3 and dithizone as starting reagents in ethylenediamine at 140°C for 72 h. XRD and Raman results reveal that the as-obtained final product is pure Sb. FE-SEM and TEM observation reveals that the prepared hollow microspheres are composed of nanoparticles. The possible formation mechanism was briefly discussed.

Shrinking nanowires by kinetically controlled electrooxidation

Thompson,Menke,Martens,Penner

, p. 36 - 41 (2006)

Nanowires composed of antimony, gold, and bismuth telluride (Bi 2Te3) were reduced in diameter by electrooxidation in aqueous solutions. When electrooxidation was carried out using low current densities (Jox -2), the mean wire diameter decreased in direct proportion to the oxidation time, as expected for a kinetically controlled process. Under these conditions, the diameter uniformity of nanowires remained constant as wires were shrunk from initial diameters of more than 120 nm to less than 40 nm, for Sb and Bi 2Te3, and less than 60 nm for Au. Oxidized nanowires remained continuous for more than 100 μm. Electrooxidation at higher current densities rapidly introduced breaks into these nanowires. Electrochemical wire growth and shrinking by electrooxidation were integrated into a single electrochemical experiment that allowed the final mean diameter of nanowires to be specified with a precision of 5-10 nm.

Langstroth, G. O.,McRae, D. R.

, p. 282 - 282 (1938)

Price, S. J. W.,Trotman-Dickenson, A. F.

, p. 1630 - 1637 (1958)

Solvothermal Syntheses, Crystal Structures, and Thermal Properties of New Manganese Thioantimonates(III): The First Example of the Thermal Transformation of an Amine-Rich Thioantimonate into an Amine-Poorer Thioantimonate

Schaefer, Michael,Naether, Christian,Lehnert, Nicolai,Bensch, Wolfgang

, p. 2914 - 2921 (2004)

Two new neutral thioantimonates(III) were first prepared by the reaction of elemental manganese, antimony, and sulfur in tren (tren = tris(2-aminoethyl)amine, C6H18N4) at 140 °C. In the amine-rich compound [Mn(tren)]2Sb2S 5 (1) the trigonal SbS3 pyramids are connected via common corners (S(3)) into the tetradentate [Sb2S5]4- anion. Four S atoms have bonds to the manganese atoms of the [Mn(tren)2+] cations. A special structural feature is the large Sb-S(3)-Sb(a) angle of 134°. Density functional calculations clearly demonstrate that this large angle results from the steric interactions between the two Mn(tren) subunits. In the crystal structure of the amine-poorer compound [Mn(tren)] 2Mn2Sb4S10 (2), MnS4 tetrahedra and SbS3 pyramids are linked via common corners and edges to form a new heterometallic [Mn2Sb4S10] core. The [Mn(C6H18N4)2+] cations are located at the periphery of the core and are bound to the [Mn2Sb 4S10] unit via two S atoms. The thermal behavior of both compounds was investigated using simultaneous thermogravimetry (TG), differential thermoanalysis, and mass spectroscopy. The amine-richer compound 1 decomposes in three steps upon heating. After the first TG step an intermediate phase is formed, which was identified as the amine-poorer compound 2 by X-ray diffraction. Reaction of compound 2 at 140 °C with an excess of tren forms the amine-rich compound 1.

Thermal decomposition of tris(O-ethyldithiocarbonato)-antimony(III)—a single-source precursor for antimony sulfide thin films

Adamson, Jasper,Eensalu, Jako S.,Krunks, Malle,Oja Acik, Ilona,T?nsuaadu, Kaia

, (2021/06/25)

Thermal decomposition of tris(O-ethyldithiocarbonato)-antimony(III) (1), a precursor for Sb2S3 thin films synthesized from an acidified aqueous solution of SbCl3 and KS2COCH2CH3, was monitored by simultaneous thermogravimetry, differential thermal analysis and evolved gas analysis via mass spectroscopy (TG/DTA-EGA-MS) measurements in dynamic Ar, and synthetic air atmospheres. 1 was identified by Fourier transform infrared spectroscopy (FTIR) and nuclear magnetic resonance (NMR) measurements, and quantified by NMR and elemental analysis. Solid intermediates and final decomposition products of 1 prepared in both atmospheres were determined by X-ray diffraction (XRD), Raman spectroscopy, and FTIR. 1 is a complex compound, where Sb is coordinated by three ethyldithiocarbonate ligands via the S atoms. The thermal degradation of 1 in Ar consists of three mass loss steps, and four mass loss steps in synthetic air. The total mass losses are 100% at 800?°C in Ar, and 66.8% at 600?°C in synthetic air, where the final product is Sb2O4. 1 melts at 85?°C, and decomposes at 90–170?°C into mainly Sb2S3, as confirmed by Raman, and an impurity phase consisting mostly of CSO22? ligands. The solid-phase mineralizes fully at ≈240?°C, which permits Sb2S3 to crystallize at around 250?°C in both atmospheres. The gaseous species evolved include CS2, C2H5OH, CO, CO2, COS, H2O, SO2, and minor quantities of C2H5SH, (C2H5)2S, (C2H5)2O, and (S2COCH2CH3)2. The thermal decomposition mechanism of 1 is described with chemical reactions based on EGA-MS and solid intermediate decomposition product analysis.

Post a RFQ

Enter 15 to 2000 letters.Word count: 0 letters

Attach files(File Format: Jpeg, Jpg, Gif, Png, PDF, PPT, Zip, Rar,Word or Excel Maximum File Size: 3MB)

1

What can I do for you?
Get Best Price

Get Best Price for 7440-36-0