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7450-59-1

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7450-59-1 Usage

Uses

PDDPA can be used to functionalize zinc nanoparticles which may be used to modify the work function for solar cell (SC) based applications. It can also modify the surface of titanium by fabricating biomimetic calcium-phosphate layers which can be used in the surface treatment of dental implants.

General Description

(12-Phosphonododecyl)phosphonic acid (PDDPA) is a phosphonic acid derivate that forms a self-assembled monolayer (SAM) on a variety of nanoparticle surfaces. The phosphonate groups interact with the hydroxyl groups of the nanoparticles to form stable interfacial linkages.

Check Digit Verification of cas no

The CAS Registry Mumber 7450-59-1 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 7,4,5 and 0 respectively; the second part has 2 digits, 5 and 9 respectively.
Calculate Digit Verification of CAS Registry Number 7450-59:
(6*7)+(5*4)+(4*5)+(3*0)+(2*5)+(1*9)=101
101 % 10 = 1
So 7450-59-1 is a valid CAS Registry Number.

7450-59-1 Well-known Company Product Price

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  • Aldrich

  • (685437)  (12-Phosphonododecyl)phosphonicacid  97%

  • 7450-59-1

  • 685437-1G

  • 888.03CNY

  • Detail

7450-59-1SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 15, 2017

Revision Date: Aug 15, 2017

1.Identification

1.1 GHS Product identifier

Product name 12-phosphonododecylphosphonic acid

1.2 Other means of identification

Product number -
Other names dodecane-1,12-diyldiphosphonic acid

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:7450-59-1 SDS

7450-59-1Downstream Products

7450-59-1Relevant articles and documents

Organic Thin-Film Transistors Fabricated by Solution-Processed and Low-Temperature Condensed Hybrid Gate Dielectrics

Song, Youngmin,Ha, Young-Geun

, p. 123 - 126 (2020)

Herein, we report on the preparation of new solution-processed and low-temperature condensed organic–inorganic hybrid dielectric films and their electrical properties for applications in low-power organic thin-film transistors (OTFTs). The low-temperature condensed hybrid dielectric films (~19 nm thick) were simply fabricated by spin coating a mixture solution of a zirconium chloride and synthesized bifunctional phosphonic acid organic reagents, followed by annealing at a relatively low temperature (~90 °C). The prepared hybrid dielectric films exhibited excellent dielectric properties (low leakage current density ?6 A/cm2 and high capacitance of 520 nF/cm2) as well as a smooth surface (RMS roughness a relatively low operating bias (?2 V) and exhibited great TFT characteristics (hole mobility: 0.3 cm2/V/s, low threshold voltage: ?0.7 V, low subthreshold swing: 0.17 V/dec, on/off current ratio: 105).

Rapid one-pot synthesis of alkane-α ω, diylbisphosphonic acids from dihalogenoalkanes under microwave irradiation

Villemin, Didier,Moreau, Bernard,Kaid, M'Hamed,Didi, Mohamed Amine

experimental part, p. 1583 - 1586 (2010/10/01)

A one-pot, two-step synthesis of alkylenebisphosphonic acids from dihalogenoalkanes was performed under microwave irradiation. The reaction is very rapid and convenient for the synthesis of small samples of alkylenebisphosphonic acids. Copyright Taylor & Francis Group, LLC.

The role of substrate identity in determining monolayer motional relaxation dynamics

Horne,Blanchard

, p. 6336 - 6344 (2007/10/03)

We report on the lifetime and motional dynamics of Zirconium Phosphonate (ZP) monolayers containing oligothiophene chromophores in a range of concentrations. Monolayers were formed on fused silica substrates and on a 15 ? oxide layer formed on crystalline Si(100) substrates. For both interfaces, the fluorescence lifetime behavior of the chromophores is identical and does not depend on chromophore concentration within the monolayer. Transient anisotropy measurements reveal that, for both substrates, the chromophores are oriented at ~35°with respect to the surface normal. For monolayers formed on silica, there is no evidence for chromophore motion, while motion is seen for monolayers formed on silicon. Despite the substantial similarity between the two families of monolayers, the surface roughness of the primed silicon substrate allows for greater motional freedom of the chromophores in the monolayers. We discuss these findings in the context of the differences in substrate surface roughness and domain sizes as measured by atomic force microscopy (AFM).

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