Paper
Journal of Materials Chemistry C
˚
Mo Ka radiation (l ¼ 0.71073 A). The data were collected at
173 K for TIPS–ABT and TMS–ABT. The structures were resolved
by the direct method and rened by full-matrix least-squares on
F2 using the SHELXL-97 program. All of the non-hydrogen
atoms were rened anisotropically. Complete crystallographic
data for the three compounds are available.
Notes and references
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Crystallographic data for single crystal TIPS–ABT-1:
˚
C
42H52SSi2; FM ¼ 645.08; monoclinic; P21/c; a ¼ 8.545(2) A; b ¼
ꢁ
ꢁ
ꢁ
˚
˚
17.738(4) A; c ¼ 25.019(6) A; a ¼ 90 ; b ¼ 90.907(4) ; g ¼ 90.00 ;
V ¼ 3791.9(16) A ; Z ¼ 4; rcalculated ¼ 1.130 g cmꢀ3. Convergence
3
˚
to R ¼ 0.1742 (wR2 ¼ 0.1834) was obtained. The nal value of S
was 1.234.
Crystallographic data for single crystal TIPS–ABT-2:
˚
¨
V. Enkelmann, M. Baumgarten and K. Mullen, J. Org.
C
42H52SSi2; FM ¼ 645.08, monoclinic, P21/n; a ¼ 12.241(2) A;
ꢁ
ꢁ
˚
˚
Chem., 2008, 73, 9207; (d) S. Tierney, C. Wang and
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b ¼ 15.168(3) A; c ¼ 20.461(4) A; a ¼ 90.00 ; b ¼ 93.260(3) ; g ¼
3
ꢁ
˚
90.00 ; V ¼ 3793.0(12) A ; Z ¼ 4; rcalculated ¼ 1.130. Convergence
to R ¼ 0.0812 (wR2 ¼ 0.0896) was obtained. The nal value of S
was 1.241.
Crystallographic data for single crystal TMS–ABT: FM ¼
˚
˚
ꢀ
476.76; triclinic; P1; a ¼ 7.2587(15) A; b ¼ 13.877(3) A;
ꢁ
ꢁ
ꢁ
˚
c ¼ 13.896(3) A; a ¼ 75.68(3) ; b ¼ 87.39(3) ; g ¼ 78.99(3) ; V ¼
1331.4 (5) A ; Z ¼ 2; rcalculated ¼ 1.189 g cmꢀ3. Convergence to
3
˚
R ¼ 0.1460 (wR2 ¼ 0.1529) was obtained. The nal value of S was
1.165.
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FET device fabrication and measurement
Organic eld-effect transistors (OFETs) were fabricated in a top-
contact bottom-gate conguration. Before the deposition of the
organic semiconductors, octadecyltrichlorosilane (OTS) treat-
ment was performed on the SiO2 gate dielectrics in a vacuum to
form an OTS self-assembled monolayer. Then a layer of organic
semiconductor lm was deposited onto the OTS-treated
substrates under vacuum-deposition conditions (about 30 nm
thickness), under a vacuum of ca. 6 ꢂ 10ꢀ4 Pa at preset
substrate temperatures (Tsub). Gold source and drain contacts of
50 nm were patterned by thermal evaporation using shadow
masks. The OTS-modied Si/SiO2 substrates were kept under
different temperatures. The eld-effect characteristics of the
devices were determined in air using a Keithley 4200 SCS
semiconductor parameter analyzer. The mobility of the devices
was calculated in the saturation regime. The equation is as
follows:
IDS ¼ (W/2L)Cim(VGS ꢀ Vth)2
´
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where W/L is the channel width/length, Ci is the insulator
capacitance per unit area, and VGS and Vth are the gate voltage
and threshold voltage, respectively.
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H. Yamochi, K. Seki, Y. Higuchi and N. Yasuoka, Nature,
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Acknowledgements
This research was nancially supported by the National Science
Foundation of China (20825208 and 21021091), the Major State
Basic Research Development Program (2011CB808403,
2011CB932303), and the Chinese Academy of Sciences.
This journal is ª The Royal Society of Chemistry 2013
J. Mater. Chem. C