J. Yuan, W. Ma / Organic Electronics 39 (2016) 279e287
283
device performance, since it has been proven to be an efficient and
universal post-treatment to improve the morphology of polymer-
fullerene films [23].
and hole mobility are crucial to achieve efficient and balanced
carrier transport. To compare the charge transport properties of
molecule/N2200 blends, hole only and electron-only diodes were
fabricated and measured [25], with a device structure of ITO/
PEDOT:PSS (40 nm)/blend/MoOx (6 nm)/Ag(80 nm) and ITO/ZnO
(40 nm)/blend/LiF (0.6 nm)/Al (80 nm). As shown in Fig. 5b, the
hole mobilities of the Optimized DPP-B/N2200, DPP-N/N2200 and
M-P BHJ blends cast from neat solvent without any treatment
exhibited a PCE of 0.04%, 0.05% and 1.18% for DPP-B, DPP-N and
DPP-P, respectively, with corresponding Voc values of 0.85 V, 0.74V
and 0.88 V. The relatively low PCEs were due to the low Jsc and FF. As
shown in Table 1, thermal annealing hardly enhances the photo-
voltaic performance in all the devices, probably due to the unfav-
ourable self-contained morphology from the initial blend films.
However, as shown in Table 1 and Fig. 4c, significant improvements
were observed upon introduction DIO as a solvent additive to the
processing solvent, giving highest PCEs of 0.20%, 0.50% and 1.75%
for DPP-B, DPP-N and DPP-P, respectively. The enhancement of PCEs
was mainly due to the improved Jsc and FF. Finally, we realized a
highest PCE of 2.05% for DPP-P/N2200 solar cell device through the
synergistic effect between thermal annealing and solvent additive,
which is also among the highest report for the less focused M-P
nonfullerene solar cells [12,13]. External quantum efficiency (EQE)
curves are shown in Fig. 4d. All M-P devices show a broad EQE
response from 300 to 800 nm, however, DPP-B/N2200 and DPP-N/
N2200 exhibit average value less than 5% across the 500e750 nm
range. In contrast, DPP-P/N2200 display quite higher quantum ef-
ficiency values, with maximum EQE value over 30% and the Jsc
values calculated from integration of the EQE with the AM1.5G
reference spectrum are in agreement (±5%) with the Jsc obtained
from the J-V measurements.
ꢀ
6
2
ꢀ1
ꢀ1
s ,
DPP-P/N2200 blends are 1.7*10
cm
V
1.6*10
ꢀ5
2
ꢀ1 ꢀ1
ꢀ4
2
ꢀ1 ꢀ1
cm
V
s
and 3.2*10 cm
V
s , respectively, which are
about one order enhancement when incorporating benzene,
naphthalene and pyrene into the molecular backbone as the end
groups. In contrast, the J-V curves of electron-only devices based on
the optimized DPP-B/N2200, DPP-N/N2200 and DPP-P/N2200
blends are quite similar, with SCLC fitting slope value of 5.0, 4.9
and 6.5, respectively. Further we can calculated the electron mo-
ꢀ5
2
ꢀ1 ꢀ1
bilities of these blend are roughly around 3.5*10
cm
V s ,
which exhibit similar value compared to the previous report for the
N2200 based blend film [11,12]. Herein, all the blends exhibit quite
similar electron mobilities, the major difference in hole mobilities
will govern the Jsc and the FF of the M-P solar cell devices. DPP-P
with enhanced crystallinity and intermolecular contacts show
higher hole mobility in the BHJ blend under the same experimental
condition, which proves the selection of highly crystalline small
molecule donor could be an efficient approach to improve the M-P
2
nonfullerene OSCs. However, the Jsc in our work (~4.5 mA/cm ) and
2
even in the best M-P solar cell device (~8.0 mA/cm ) [12] is still
relatively lower compared to other type nonfullerene OSCs (over
2
In order to understand the major effect on small molecule donor
properties on device performance, we carried out several in-
vestigations on charge extraction, generation and transport. The
dependence of the photocurrent density (Jph) on the effective
voltage (Veff) was firstly recorded under illumination at 100
15 mA/cm ) [9], which may probably due to the lower electron
affinity, limited exciton diffusion length and higher electron traps
in these polymer acceptors [12a].
2.5. Blend morphology
ꢀ
2
mWcm . Jph is equal to J
current under illumination and in dark, respectively. Veff is equal to
-V where V is the voltage when Jph is zero and V is the applied
voltage [24]. As shown in Fig. 5a, at low effective voltage below
.5 V, the Jph of DPP-P/N2200 increases drastically and reaches a
L D L D
-J , where J and J are the measured
Lots of previous reports [1,2] have demonstrated that the
exciton dissociation and charge transport process is strongly
affected by the polymer/PCBM blend morphology. Therefore, a
thorough morphological study may be helpful to understand the
less efficient carrier generation and transport process in non-
fullerene solar cells. The morphology of DPP-B/N2200, DPP-N/
N2200 and DPP-P/N2200 blend films was first examined by atomic
force microscopy (AFM) (Fig. 6). By adopting different end groups to
DPP-based donor molecules, the increased backbone rigidity and
intermolecular contacts can promote the aggregation and crystal-
lization process of the donor molecules. The enhanced packing and
crystallinity further promote the molecular/N2200 demixing,
leading to a rougher surface and large “needle” like domains
(Fig. 6c). DIO is believed to allow a slower crystallization process
during spin-coating, thus improving morphology through
enhanced intermolecular ordering and well-developed phase sep-
aration [26]. Therefore, we observed that DPP-B/N2200 and DPP-N/
N2200 blend films processed with DIO exhibited rougher surface
and larger phase separation domains, which may lead to a more
efficient charge transport. However, for DPP-P/N2200, the addition
of DIO further enhanced the mixing the donor and acceptor do-
mains, leading to a more uniformly distributed height surface. In
order to confirm the speculation, we also investigated the blend
film morphology by using GIWAXS, as shown in Fig. 7. For all the
molecule/N2200 blend films, after the addition of DIO, the
morphology showed a dramatic change from the original amor-
phous film to a semi-crystalline blend films with defined rings and
peaks, the crystalline domains is the desired morphology for effi-
cient carrier transport. However, for DPP-P/N2200, distinctive
donor molecular structure has already established the strong
intermolecular contacts and higher degree of structural order.
Compared to DPP-B and DPP-P based blend GIWAXS patterns, the
V
0
a
0
a
0
plateau at higher voltage, suggesting that free charges are swept
out efficiently. In comparison, the Jph of DPP-B/N2200 and DPP-N/
N2200 increase with a slower rate, indicating less efficient carrier
extraction. More importantly, the Jph of the latter is significantly
smaller than that of the DPP-P/N2200 at normal device operational
voltage, which is in accordance with its lower Jsc value. Thus the low
J
ph density suggests that the carrier generation process for DPP-B
and DPP-N must be less efficient than that of DPP-P/N2200 sys-
tem, which may attributed to the different blend morphology.
The charge carrier mobility is another important factor that af-
fects solar cell device performance. In addition, both the electron
Table 1
Photovoltaic properties of PSCs, under an illumination of AM1.5G, 100 mW/cm2
sc (mA/cm2)
Treatment
None
V
oc (V)
J
FF (%)
PCE (%)
DPP-B
DPP-B
DPP-B
DPP-N
DPP-N
DPP-N
DPP-P
DPP-P
DPP-P
DPP-P
0.85
0.69
0.63
0.74
0.69
0.83
0.88
0.79
0.78
0.78
0.14
0.06
0.69
0.26
0.30
1.14
2.89
3.64
4.47
4.45
33.3
46.9
43.4
27.1
43.4
53.2
46.2
45.9
50.3
58.5
0.04
0.02
0.20
0.05
0.09
0.50
1.18
1.32
1.75
2.05
ꢁ
a
TA 120
C
0.5% DIO
None
TA 120 Ca
0.5% DIO
ꢁ
None
TA 120 ꢁCa
0.5% DIO
0.5% DIOb
a
Annealed prior to cathode deposition, 20 min.
Additionally annealed at 120 C for 3 min post to cathode deposition.
b
ꢁ