Gallium(III)oxide

Base Information

• Chemical Name: Gallium(III)oxide
• CAS No.: 12024-21-4
• Molecular Formula: Ga2O3
• Molecular Weight: 187.44
• Hs Code.: 28259090
• DSSTox Substance ID: DTXSID9031359
• Wikidata: Q419487
• Mol file: 12024-21-4.mol

Synonyms:GALLIUM(III)OXIDE;Gallium(III) oxide, Puratronic?;MFCD00011020;Gallium (III) Oxide;Gallium Oxide Nanopowder;GA2O3;AKOS015903618;NS00085489;D95695;Q419487;Gallium(III) oxide, >=99.99% trace metals basis

Chemical Property of Gallium(III)oxide

Chemical Property:

• Appearance/Colour: white odourless powder
• Melting Point: 1740 °C
• Refractive Index: 1.92
• PSA: 43.37000
• Density: 6.44 g/mL at 25 °C
• LogP: -0.84260
• Storage Temp.: Sealed in dry,Room Temperature
• Water Solubility.: Soluble in acids. Insoluble in water
• Hydrogen Bond Donor Count: 0
• Hydrogen Bond Acceptor Count: 3
• Rotatable Bond Count: 0
• Exact Mass: 187.83502
• Heavy Atom Count: 5
• Complexity: 34.2

Purity/Quality:

99.99%-99.999% ^*data from raw suppliers

Gallium(III) oxide ^*data from reagent suppliers

Safty Information:

• Safety Statements: 24/25

MSDS Files:

SDS file from LookChem

Total 1 MSDS from other Authors

Useful:

• Canonical SMILES: O=[Ga]O[Ga]=O
• Physical properties: White crystals; exists in three crystalline modifications: alpha-, beta-, and gamma-Ga2O3; while the alpha-form is analogous to the corundum form of alumina, the beta-Ga2O3 is isomorphous with theta-alumina; alpha-form converts to beta-modification on calcination at high temperatures (600°C); gamma form is stable at low temperatures; density 6.44 g/cm3 (alpha-Ga2O3), 5.88 g/cm3 (betaGa2O3); melts at 1,725°C; soluble in most acids. Gallium(III) oxide is used in the manufacture of gadolinium gallium garnet as a substrate in bubble domain memories; these are compact devices not requiring the storage power demanded by other memory devices. Gallium(III) oxide is starting material for the preparation of Sr2CuGaO3S, an example of a rare square pyramidal gallium.
• Uses: The compound is used in spectroscopic analysis and in preparing gallium arsenide for making semiconductors. In semiconductors; gas sensing; catalysis. Nanostructures as blue and UV light emitters in optoelectronic device applications. Gallium(III) oxide has been reported in applications in lasers, phosphors, and luminescent materials. Monoclinic ?-Ga2O3 is used in gas sensors and luminescent phosphors and can be applied to dielectric coatings for solar cells. This stable oxide has also shown potential for deep-ultraviolet transparent conductive oxides, and transistor applications. Thin Ga2O3 films are of commercial interest as gas sensitive materials. ?-Gallium(III) oxide is used in the production of Ga2O3-Al2O3 catalyst. Gallium(III) oxide is used in vacuum deposition. It is useful for making semiconductor devices, gallium-alumina catalyst, gas sensors, luminescent phosphors and dielectric coatings of solar cells. It shows potential for developing deep-ultraviolet TCOs (Transparent Conductive Oxides) and transparent electrodes for ultraviolet optoelectronic devices. Recent studies report that gallium oxide can be a strong contender for power electronic devices for example, in ultrahigh-voltage power switching applications. Films made of gallium oxide have gained commercial interest owing to their gas sensitive characteristics, and glasses made with gallium oxide are the preferred optical materials for use in advanced technologies.