Technology Process of C30H58O4Si2
There total 11 articles about C30H58O4Si2 which
guide to synthetic route it.
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synthetic route:
- Guidance literature:
-
Multi-step reaction with 11 steps
1: 98 percent / CSA / CH2Cl2 / 0 - 20 °C
2: 78 percent / Li; liq. NH3 / tetrahydrofuran / 0.17 h / -33 °C
3: 70 percent / Et3N; DMAP / CH2Cl2 / 0 - 20 °C
4: 92 percent / TBAF / tetrahydrofuran / 0 - 20 °C
5: (COCl)2; DMSO; Et3N / CH2Cl2 / 2 h / -78 - 0 °C
6: CH2Cl2 / 20 °C
7: 86 percent / LiBH4 / tetrahydrofuran / 16 h / 0 - 20 °C
8: 96 percent / NaHMDS / tetrahydrofuran; dimethylformamide / 0 - 20 °C
9: 65 percent / TFA / 2-methyl-propan-2-ol / 2 h / 20 °C
10: 100 percent / 2,6-lutidine / 0.17 h / 0 °C
11: 75 percent / HF; pyridine / tetrahydrofuran / 5 h / 0 - 20 °C
With
pyridine; 2,6-dimethylpyridine; dmap; lithium borohydride; oxalyl dichloride; camphor-10-sulfonic acid; hydrogen fluoride; tetrabutyl ammonium fluoride; ammonia; sodium hexamethyldisilazane; lithium; dimethyl sulfoxide; triethylamine; trifluoroacetic acid;
In
tetrahydrofuran; dichloromethane; N,N-dimethyl-formamide; tert-butyl alcohol;
DOI:10.1016/j.tetlet.2007.04.016
- Guidance literature:
-
Multi-step reaction with 10 steps
1: 78 percent / Li; liq. NH3 / tetrahydrofuran / 0.17 h / -33 °C
2: 70 percent / Et3N; DMAP / CH2Cl2 / 0 - 20 °C
3: 92 percent / TBAF / tetrahydrofuran / 0 - 20 °C
4: (COCl)2; DMSO; Et3N / CH2Cl2 / 2 h / -78 - 0 °C
5: CH2Cl2 / 20 °C
6: 86 percent / LiBH4 / tetrahydrofuran / 16 h / 0 - 20 °C
7: 96 percent / NaHMDS / tetrahydrofuran; dimethylformamide / 0 - 20 °C
8: 65 percent / TFA / 2-methyl-propan-2-ol / 2 h / 20 °C
9: 100 percent / 2,6-lutidine / 0.17 h / 0 °C
10: 75 percent / HF; pyridine / tetrahydrofuran / 5 h / 0 - 20 °C
With
pyridine; 2,6-dimethylpyridine; dmap; lithium borohydride; oxalyl dichloride; hydrogen fluoride; tetrabutyl ammonium fluoride; ammonia; sodium hexamethyldisilazane; lithium; dimethyl sulfoxide; triethylamine; trifluoroacetic acid;
In
tetrahydrofuran; dichloromethane; N,N-dimethyl-formamide; tert-butyl alcohol;
DOI:10.1016/j.tetlet.2007.04.016