Technology Process of C26H34O4Si
There total 10 articles about C26H34O4Si which
guide to synthetic route it.
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synthetic route:
- Guidance literature:
-
With
1, 6-heptadien-4-ol; bis(trifluoromethanesulfonyl)amide;
In
dichloromethane;
at -78 ℃;
for 0.0833333h;
DOI:10.1021/ol8008057
- Guidance literature:
-
Multi-step reaction with 8 steps
1.1: (-)-B-methoxydiisopinocamphenylborane / diethyl ether / 1 h / 0 - 20 °C
1.2: 3 h / -78 °C
2.1: sodium hydride / tetrahydrofuran / 1 h / -10 - 20 °C
2.2: 12 h / 20 °C
3.1: 9-bora-bicyclo[3.3.1]nonane / tetrahydrofuran / 5 h / 0 - 20 °C
3.2: 2 h / Reflux
4.1: dimethyl sulfoxide; triethylamine; sulfur trioxide pyridine complex / dichloromethane / 2 h / -10 °C
5.1: diethyl ether / 3 h / -78 °C
6.1: acetic acid / water / 1.5 h / 70 °C
7.1: manganese(IV) oxide / dichloromethane / 6 h / 20 °C / Sonication
8.1: (+/-)-hepta-1,6-dien-3-ol; bis(trifluoromethanesulfonyl)amide / dichloromethane / 0.08 h / -78 °C
With
manganese(IV) oxide; (+/-)-hepta-1,6-dien-3-ol; (-)-B-methoxydiisopinocamphenylborane; sulfur trioxide pyridine complex; sodium hydride; bis(trifluoromethanesulfonyl)amide; acetic acid; dimethyl sulfoxide; triethylamine; 9-bora-bicyclo[3.3.1]nonane;
In
tetrahydrofuran; diethyl ether; dichloromethane; water;
DOI:10.3987/COM-12-S(N)54
- Guidance literature:
-
Multi-step reaction with 6 steps
1.1: 9-bora-bicyclo[3.3.1]nonane / tetrahydrofuran / 5 h / 0 - 20 °C
1.2: 2 h / Reflux
2.1: dimethyl sulfoxide; triethylamine; sulfur trioxide pyridine complex / dichloromethane / 2 h / -10 °C
3.1: diethyl ether / 3 h / -78 °C
4.1: acetic acid / water / 1.5 h / 70 °C
5.1: manganese(IV) oxide / dichloromethane / 6 h / 20 °C / Sonication
6.1: (+/-)-hepta-1,6-dien-3-ol; bis(trifluoromethanesulfonyl)amide / dichloromethane / 0.08 h / -78 °C
With
manganese(IV) oxide; (+/-)-hepta-1,6-dien-3-ol; sulfur trioxide pyridine complex; bis(trifluoromethanesulfonyl)amide; acetic acid; dimethyl sulfoxide; triethylamine; 9-bora-bicyclo[3.3.1]nonane;
In
tetrahydrofuran; diethyl ether; dichloromethane; water;
DOI:10.3987/COM-12-S(N)54