Poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(bithiophene)]

Base Information

• Chemical Name: Poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(bithiophene)]
• CAS No.: 210347-56-1
• Molecular Formula: (C37H44 S2)n
• Molecular Weight: 0

Synonyms:2,2'-Bithiophene-9,9-dioctylfluorenecopolymer, SRU; F 8T2; Poly(9,9-dioctylfluorene-alt-bithiophene)

Chemical Property of Poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(bithiophene)]

Chemical Property:

• Melting Point: 228 °C
• PSA: 56.48000
• LogP: 13.52810

Purity/Quality:

99%, ^*data from raw suppliers

F8T2 99.9% ^*data from reagent suppliers

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Useful:

• Description: Poly(9,9-dioctylfluorene-alt-bithiophene), also known as F8T2, is a semiconducting material that is widely used in organic electronics such as organic photovoltaics, polymer light-emitting diodes (PLED) and organic field-effect transistors (OFETs). Comparing with poly-3-hexylthiophene, F8T2 has even higher mobilities of 0.1 cm2/V · s and relatively higher stability against chemical doping by environmental oxygen or residual impurities such as mobile sulphonic acid in the PEDOT/PSS ink. This enables devices with higher on-off current ratios exceeding 105 and with better operating stability than printed poly-3-hexylthiophene devices[1]. The absorption in the blue region of F8T2 makes it an excellent donor polymer to blend with an acceptor having complementary spectrum or assemble a tandem cell with other low bandgap-conjugated polymers with absorption extended in the red region. ▼▲ Device structure ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?? ITO/PEDOT:PSS/TFB/F8T2/Ca ?[3] ? ? ? ? ? ? ? ? ? ? ? ? ? ? Color Green ? Max.?Luminance 23,400 Max. Current Efficiency 3.68 cd/A Max. Power Efficiency 2.9?lm?W?1 Poly(9,9-dioctylfluorene-alt-bithiophene), also known as F8T2, is a semiconducting material that is widely used in organic electronics such as organic photovoltaics, polymer light-emitting diodes (PLED) and organic field-effect transistors (OFETs). Comparing with poly-3-hexylthiophene, F8T2 has even higher mobilities of 0.1 cm2/V·s and relatively higher stability against chemical doping by environmental oxygen or residual impurities such as mobile sulphonic acid in the PEDOT/PSS ink. This enables devices with higher on-off current ratios exceeding 105 and with better operating stability than printed poly-3-hexylthiophene devices.
• Uses: F8T2 can be majorly used in the fabrication of active layers for optoelectronics and energy based devices such as organic field effect transistors(OFETs), solar cells, light emitting diodes(LEDs) and electronic gas sensors.

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