HOs₃(SCHNC₆H₄F)(CO)10

Base Information

Chemical Name:HOs₃(SCHNC₆H₄F)(CO)10
CAS No.:79737-56-7
Molecular Formula:C₁₇H₆FNO₁₀Os₃S
Molecular Weight:1005.9
Hs Code.:

HOs<sub>3</sub>(SCHNC<sub>6</sub>H<sub>4</sub>F)(CO)10

Synonyms:

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Business phase:: The product has achieved commercial mass production^*data from LookChem market partment

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Chemical Property of HOs₃(SCHNC₆H₄F)(CO)10

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Technology Process of HOs₃(SCHNC₆H₄F)(CO)10

There total 1 articles about HOs₃(SCHNC₆H₄F)(CO)10 which guide to synthetic route it. The literature collected by LookChem mainly comes from the sharing of users and the free literature resources found by Internet computing technology. We keep the original model of the professional version of literature to make it easier and faster for users to retrieve and use. At the same time, we analyze and calculate the most feasible synthesis route with the highest yield for your reference as below:

synthetic route:

Reference yield: 86.0%

: decacarbonyltriosmiumdihydride

: 1544-68-9
4-fluorophenyl isothiocyanate

: 79737-56-7
HOs₃(SCHNC₆H₄F)(CO)10

Guidance literature:: In hexane; an excess of p-FC6H4NCS was added under N2 to a hexane soln. of H2Os3(CO)10 over the course of 1 h, the mixt. was stirred for an addnl. hour; the vol. of the reaction mixt. was reduced in vacuo, cooled to -20°C, the mother liquor was decanted, ppt. washed with pentane at -20°C, dried under vac.;

Reference yield: 69.0%

: 79737-56-7
HOs₃(SCHNC₆H₄F)(CO)10

: 79994-14-2
HOs₃(SCHNC₆H₄F)(CO)9

Guidance literature:: In hexane; byproducts: CO; Irradiation (UV/VIS); a soln. of Os3-cluster in hexane was photolyzed with a 100-W high-pressure Hg arc lamp (Pyrex glassware) under N2 atmosphere for 1 h; the solvent was removed in vacuo, residue chromd. on SiO2 plates (eluent 9:1 hexane/CH2Cl2), recrystd. at -20°C from CH2Cl2-hexane;

Reference yield: 43.0%

: 79737-56-7
HOs₃(SCHNC₆H₄F)(CO)10

: 84027-41-8
HOs₃(S)(HCNC₆H₄F)(CO)9

Guidance literature:: In octane; a soln. of Os3-cluster in octane was heated to reflux under N2 for 3 h; the solvent was removed in vacuo, residue chromd. on SiO2 plates (eluent 9:1 hexane/CH2Cl2);