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CAS No.: | 10544-73-7 | ||||
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Name: | dinitrogen trioxide | ||||
Article Data: | 304 | ||||
Molecular Structure: | |||||
Formula: | N2O3 | ||||
Molecular Weight: | 76.0116 | ||||
Synonyms: | Dinitrogentrioxide;Nitrogen sesquioxide;Nitrogen trioxide;Nitrogen trioxide (N2O3);Nitrous anhydride;asym-Dinitrogen trioxide; | ||||
EINECS: | 234-128-5 | ||||
Density: | 1.94g/cm3 | ||||
Melting Point: | -103.15°C | ||||
Boiling Point: | °Cat760mmHg | ||||
Flash Point: | °C | ||||
Safety: |
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PSA: | 75.25000 | ||||
LogP: | 0.46770 |
Conditions | Yield |
---|---|
In toluene -20°C,for 2h; | 94.4% |
In toluene -20°C,for 2h; | 94.4% |
-20°C, absorption of NO; |
dinitrogen tetraoxide
phosphorus trichloride
A
dinitrogen trioxide
C
pyrophosphoryl chloride
D
nitrogen(II) oxide
E
trichlorophosphate
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: NOCl, NO2Cl; Irradiation (UV/VIS); passing dry N2O4 over the surface of freshly distd. PCl3 cooled at -40 °C and under irradiation with UV light; absortion under formation of a dark red liq.; expelling NO, N2O3, NOCl, NO2Cl;; isolation of liquid products by fractionation; liquid phase containing POCl3, P2O3Cl4 and P4O4Cl10; yield of P2O3Cl4 25 %, P4O4Cl10 3 %;; | A n/a B 3% C 25% D n/a E n/a |
In neat (no solvent) byproducts: NOCl, NO2Cl; passing dry N2O4 over the surface of freshly distd. PCl3 cooled at -40 °C; absortion under formation of a dark red liq.; expelling NO, N2O3, NOCl, NO2Cl; liquid phase contg. POCl3, P2O3Cl4 and a small amount of P4O4Cl10;; isolation of liquid products by fractionation; yield of P2O3Cl4 5 %, P4O4Cl10 10 %;; | A n/a B 10% C 5% D n/a E n/a |
dinitrogen tetraoxide
phosphorus trichloride
A
dinitrogen trioxide
D
pyrophosphoryl chloride
E
trichlorophosphate
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: NOCl, NO2Cl, NO; passing dry N2O4 over the surface of freshly distd. PCl3 cooled at -10 °C; absortion under formation of a dark red liq.; expelling NO, N2O3, NOCl, NO2Cl and pptn. of P2O6NCl2; liquid phase contg. POCl3, P2O3Cl4 and a small amount of P4O4Cl10;; isolation of liquid products by fractionation; yield of P2O3Cl4 17 % and of P4O4Cl10 5 %;; | A n/a B 5% C n/a D 17% E n/a |
B
dinitrogen trioxide
C
nitrosyl azide
D
Nitrogen dioxide
E
dinitrogen monoxide
Conditions | Yield |
---|---|
With sulfuric acid byproducts: N2; addition of NOSO2OH in concd. H2SO4 at -195.8°C, next handle from -30 to -35°C for 8-24 h; | A n/a B n/a C 6% D n/a E n/a |
With H2SO4 byproducts: N2; addition of NOSO2OH in concd. H2SO4 at -195.8°C, next handle from -30 to -35°C for 8-24 h; | A n/a B n/a C 6% D n/a E n/a |
nitric acid
B
dinitrogen trioxide
C
nitrosyl azide
D
Nitrogen dioxide
E
dinitrogen monoxide
Conditions | Yield |
---|---|
With sulfuric acid byproducts: N2; addition of 1:1 mixture of HNO3 - H2SO4 at -195.8°C, next handle from -30 to -35°C for 8-24 h; | A n/a B n/a C 5% D n/a E n/a |
With H2SO4 byproducts: N2; addition of 1:1 mixture of HNO3 - H2SO4 at -195.8°C, next handle from -30 to -35°C for 8-24 h; | A n/a B n/a C 5% D n/a E n/a |
byproducts: N2; 70% HNO3 addition at -195.8°C, next handle from -30 to -35°C for 8-24 h; | A n/a B n/a C 4% D n/a E n/a |
Conditions | Yield |
---|---|
With oxygen; nitric acid byproducts: H2O; at 90°C 45 min with 2-fold excess of 30% HNO3; | A n/a B 5% |
With oxygen; nitric acid byproducts: H2O; at 90°C 45 min with 2-fold excess of 55% HNO3; |
Conditions | Yield |
---|---|
With oxygen; nitric acid byproducts: H2O; at 90°C 45 min with 2-fold excess of 30% HNO3; | A n/a B 5% |
With oxygen; nitric acid byproducts: H2O; at 90°C 45 min with 2-fold excess of 55% HNO3; |
nitrogen(II) oxide
ozone
A
N-oxo-N-nitrosoamine
B
peroxo nitrate radical
C
dinitrogen trioxide
D
nitrous anhydride
E
Nitrogen dioxide
Conditions | Yield |
---|---|
In gaseous matrix Kinetics; in gas phase (Ar); further product: N2O4; 0.5-1 h deposition on 10 K CsI window; characterized IR spect.; |
Nitrogen dioxide
ozone
A
dinitrogen tetroxide
B
dinitrogen trioxide
C
dinitrogen tetraoxide
D
dinitrogen pentoxide
Conditions | Yield |
---|---|
In gaseous matrix gas-phase react. of NO2/ Ar deposited on a cold CsI window with O3/ Ar (deposition rates of O3: 0.09 to less than 0.27 mmol/ h); not isolated, detected by IR spectroscopy;; |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: SiO2; | |
In neat (no solvent) byproducts: SiO2; |