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12039-76-8

12039-76-8

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12039-76-8 Usage

Chemical Properties

cub crystal(s); superconducting; -100 mesh; as a 99.5% pure sputtering target, used to produce resistant and semiconducting films in the fabrication of integrated circuits [LID94] [ALF93] [CER91]

Check Digit Verification of cas no

The CAS Registry Mumber 12039-76-8 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,3 and 9 respectively; the second part has 2 digits, 7 and 6 respectively.
Calculate Digit Verification of CAS Registry Number 12039-76:
(7*1)+(6*2)+(5*0)+(4*3)+(3*9)+(2*7)+(1*6)=78
78 % 10 = 8
So 12039-76-8 is a valid CAS Registry Number.
InChI:InChI=1/Si.3V

12039-76-8SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 17, 2017

Revision Date: Aug 17, 2017

1.Identification

1.1 GHS Product identifier

Product name silicon,vanadium

1.2 Other means of identification

Product number -
Other names Trivanadium silicide

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:12039-76-8 SDS

12039-76-8Upstream product

12039-76-8Downstream Products

12039-76-8Related news

Formation of VANADIUM SILICIDE (cas 12039-76-8) by high dose ion implantation08/05/2019

The vanadium silicide system has been found to be of increasing interest because one of the silicide phases viz. V3Si with the A-15 structure is often accompanied by a high temperature superconductivity. We have studied the formation of vanadium silicide layers by high dose ion implantation. 30 ...detailed

The ohmic contact to the silicon Schottky barrier using VANADIUM SILICIDE (cas 12039-76-8) and gold or silver metallization08/04/2019

The purity check of silicon by DLTS and other capacitance spectroscopy techniques requires high-quality ohmic contact to the silicon structure with a gold Schottky barrier using a vanadium silicide layer on the back side of the structure. The samples were made from n-type silicon wafers with a c...detailed

Low-energy Ar+ ion-beam induced VANADIUM SILICIDE (cas 12039-76-8) formation at V/Si interfaces07/30/2019

Vanadium/silicon interfaces produced by V thin film deposition on Si substrates were ion-beam mixed using 2 and 3 keV Ar+ ions at room temperature. The ion-beam mixing (IBM) has been studied by means of X-ray photoelectron spectroscopy, factor analysis and TRIDYN simulations. Comparison of the e...detailed

Electrical characterization of flash memory structure with VANADIUM SILICIDE (cas 12039-76-8) nano-particles07/28/2019

We fabricated vanadium silicide (V3Si) nano-particles embedded in silicon dioxide dielectric layer and characterized their charging effect to apply a non-volatile memory device. To create the V3Si nano-particles, the first post-annealing process in N2 gas ambient by rapid thermal annealing metho...detailed

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