12040-00-5Relevant articles and documents
Bihan, T. Le,Darracq, S.,Heathman, S.,Benedict, U.,Mattenberger, K.,Vogt, O.
, (1995)
Physicochemical study of SmTe-In2Te3 and SmTe-InTe systems
Akhmedova,Agapashaeva,Aliev
, p. 1662 - 1663 (2009)
SmTe-In2Te3 and SmTe-InTe quasi-binary joins were studied using physicochemical methods. The SmTe-In2Te3 system forms two compounds, SmIn2Te4 and SmIn 4Te7, which melt
Two new binary lanthanide polytellurides: Syntheses and crystal structures of CeTe1.90 and SmTe1.80
Ijjaali, Ismail,Ibers, James A.
, p. 3456 - 3460 (2006)
Single crystals of the new binaries CeTe1.90 and SmTe1.80 have been obtained. CeTe1.90 was synthesized at 1023 K from the reaction of Ce, TeO2, and Te with the use of a CsCl flux. It crystallizes in the tetragonal space group P42/n with 20 formula units in a cell of dimensions at 153 K of a = 10.0261 (5), c = 18.1336 (12) A, V = 1822.84 (18) A3. It is isostructural with the LnSe1.9 polyselenides (Ln=La, Ce, Pr) and with SmS1.90. SmTe1.80 was synthesized at 1223 K from the reaction of Sm and Te in a KBr flux. SmTe1.80 crystallizes in a new structural type in the tetragonal space group P4/n with 20 formula units in a cell of dimensions at 153 K of a = 9.7026 (4), c = 18.0072 (14) A, V = 1695.21 (14) A3. Both of these layered structures, which may be derived from the ZrSiS structure type, consist of double layers of [LnTe] polyhedra separated by planar Te nets that contain vacancies. In these nets the shortest Te-Te distances are 2.9194(5), 3.1204(5), and 3.3324(6) A in CeTe1.90 and 2.878(1), 2.9932(3), and 3.2114(7) A in SmTe1.80. Neither a simple delineation of the Te-Te bonding nor an assignment of individual formal oxidation states is possible in either of these compounds if one takes strict account of the Te-Te distances.
The Superstructure of Semiconducting SmTe2-x
Park, Seon-Mi,Park, So-Jeong,Kim, Sung-Jin
, p. 300 - 306 (1998)
SmTe1.84was synthesized and the crystal structure was studied by the single-crystal technique. The substructure was isostructural with LaTe2-x, where corrugated rock salt LaTe slabs alternate with planar tellurium square lattices. The substructure of SmTe1.84is tetragonal anti-Cu2Sb type and the superstructure is √5×√5 of the tetragonal subcell. The superstructure is tetragonal, withP42/nsymmetry,a=9.709(1) A andc=18.007(7) A. There are both ordered and disordered defects in the Te sheet. The superstructure obtained consists of the three possible stable solutions suggested by Lee and Foran, and all three solutions were found in a single crystal. The resistivity dependence on temperature indicates that SmTe1.84is semiconducting, which seems due to structural modulation. The structural stability of the other phases of SmTen(n=1-2) is discussed in terms of temperature and ionic radius ratio.