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12040-00-5

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12040-00-5 Usage

General Description

Samarium telluride is a compound composed of samarium and tellurium atoms, with a chemical formula of SmTe. It is a semiconductor material with potential applications in thermoelectric and optoelectronic devices. Samarium telluride has a unique electronic structure, with a narrow band gap and high carrier mobility, making it suitable for use in thermoelectric generators and infrared detectors. It also exhibits interesting magnetic and electronic properties, which make it useful for various research and industrial applications. Additionally, the compound has potential for use in quantum computing and spintronics due to its unique combination of magnetic and semiconductor properties. Overall, samarium telluride is a promising material for various technological applications due to its unique electronic and magnetic properties.

Check Digit Verification of cas no

The CAS Registry Mumber 12040-00-5 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,4 and 0 respectively; the second part has 2 digits, 0 and 0 respectively.
Calculate Digit Verification of CAS Registry Number 12040-00:
(7*1)+(6*2)+(5*0)+(4*4)+(3*0)+(2*0)+(1*0)=35
35 % 10 = 5
So 12040-00-5 is a valid CAS Registry Number.

12040-00-5SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 17, 2017

Revision Date: Aug 17, 2017

1.Identification

1.1 GHS Product identifier

Product name SAMARIUM TELLURIDE

1.2 Other means of identification

Product number -
Other names -

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:12040-00-5 SDS

12040-00-5Downstream Products

12040-00-5Related news

Synthesis of SAMARIUM TELLURIDE (cas 12040-00-5) thin films by successive ionic layer adsorption and reaction (SILAR) method for supercapacitor application07/28/2019

The present paper deals with synthesis of samarium telluride (Sm2Te3) thin films using simple and low cost successive ionic layer adsorption and reaction (SILAR) method for supercapacitor application. The Sm2Te3 thin films are characterized by X-ray diffraction (XRD) for structural determination...detailed

One-step chemical synthesis of SAMARIUM TELLURIDE (cas 12040-00-5) thin films and their supercapacitive properties07/27/2019

The letter reports synthesis of samarium telluride (Sm2Te3) thin films through a one-step chemical route. The formation of Sm2Te3 is confirmed by X-ray diffraction and X-ray photoelectron spectroscopy studies. The surface morphological study is carried out using field emission scanning electron ...detailed

12040-00-5Relevant articles and documents

Bihan, T. Le,Darracq, S.,Heathman, S.,Benedict, U.,Mattenberger, K.,Vogt, O.

, (1995)

Physicochemical study of SmTe-In2Te3 and SmTe-InTe systems

Akhmedova,Agapashaeva,Aliev

, p. 1662 - 1663 (2009)

SmTe-In2Te3 and SmTe-InTe quasi-binary joins were studied using physicochemical methods. The SmTe-In2Te3 system forms two compounds, SmIn2Te4 and SmIn 4Te7, which melt

Two new binary lanthanide polytellurides: Syntheses and crystal structures of CeTe1.90 and SmTe1.80

Ijjaali, Ismail,Ibers, James A.

, p. 3456 - 3460 (2006)

Single crystals of the new binaries CeTe1.90 and SmTe1.80 have been obtained. CeTe1.90 was synthesized at 1023 K from the reaction of Ce, TeO2, and Te with the use of a CsCl flux. It crystallizes in the tetragonal space group P42/n with 20 formula units in a cell of dimensions at 153 K of a = 10.0261 (5), c = 18.1336 (12) A, V = 1822.84 (18) A3. It is isostructural with the LnSe1.9 polyselenides (Ln=La, Ce, Pr) and with SmS1.90. SmTe1.80 was synthesized at 1223 K from the reaction of Sm and Te in a KBr flux. SmTe1.80 crystallizes in a new structural type in the tetragonal space group P4/n with 20 formula units in a cell of dimensions at 153 K of a = 9.7026 (4), c = 18.0072 (14) A, V = 1695.21 (14) A3. Both of these layered structures, which may be derived from the ZrSiS structure type, consist of double layers of [LnTe] polyhedra separated by planar Te nets that contain vacancies. In these nets the shortest Te-Te distances are 2.9194(5), 3.1204(5), and 3.3324(6) A in CeTe1.90 and 2.878(1), 2.9932(3), and 3.2114(7) A in SmTe1.80. Neither a simple delineation of the Te-Te bonding nor an assignment of individual formal oxidation states is possible in either of these compounds if one takes strict account of the Te-Te distances.

The Superstructure of Semiconducting SmTe2-x

Park, Seon-Mi,Park, So-Jeong,Kim, Sung-Jin

, p. 300 - 306 (1998)

SmTe1.84was synthesized and the crystal structure was studied by the single-crystal technique. The substructure was isostructural with LaTe2-x, where corrugated rock salt LaTe slabs alternate with planar tellurium square lattices. The substructure of SmTe1.84is tetragonal anti-Cu2Sb type and the superstructure is √5×√5 of the tetragonal subcell. The superstructure is tetragonal, withP42/nsymmetry,a=9.709(1) A andc=18.007(7) A. There are both ordered and disordered defects in the Te sheet. The superstructure obtained consists of the three possible stable solutions suggested by Lee and Foran, and all three solutions were found in a single crystal. The resistivity dependence on temperature indicates that SmTe1.84is semiconducting, which seems due to structural modulation. The structural stability of the other phases of SmTen(n=1-2) is discussed in terms of temperature and ionic radius ratio.

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