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12133-44-7

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12133-44-7 Usage

Chemical Properties

-100 mesh of 99.9% purity; there is a Cd3P2, 12014-28-7, melting point 700°C, with same properties [CER91] [ALD94]

Check Digit Verification of cas no

The CAS Registry Mumber 12133-44-7 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,1,3 and 3 respectively; the second part has 2 digits, 4 and 4 respectively.
Calculate Digit Verification of CAS Registry Number 12133-44:
(7*1)+(6*2)+(5*1)+(4*3)+(3*3)+(2*4)+(1*4)=57
57 % 10 = 7
So 12133-44-7 is a valid CAS Registry Number.

12133-44-7SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 20, 2017

Revision Date: Aug 20, 2017

1.Identification

1.1 GHS Product identifier

Product name CADMIUM PHOSPHIDE

1.2 Other means of identification

Product number -
Other names -

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:12133-44-7 SDS

12133-44-7Downstream Products

12133-44-7Relevant articles and documents

Phase transformations of the ferromagnetic semiconductor Cd1-x MnxGeP2 at pressures of up to 5 GPa

Novotortsev,Mollaev,Kamilov,Arslanov,Zalibekov,Marenkin,Varnavskii

, p. 826 - 829 (2006)

The electrical resistivity and Hall coefficient of Cd1-x Mn xGeP2 (x=0-0.19) have been measured at 300 K and hydrostatic pressures of up to 5 GPa. The results indicate that CdGeP 2 dissociates to CdP2 and Ge at p = 3.2 GPa, while the incorporation of manganese stabilizes the crystal structure of CdGeP 2, and Cd0.81Mn0.19GeP2 undergoes a reversible phase transition at p = 3.5 GPa. Pleiades Publishing, Inc., 2006.

Charge and magnetization transport in Cd0.81mn 0.19GeP2 dilute magnetic semiconductor under high pressures

Mollaev,Kamilov,Arslanov,Novotortsev,Marenkin,Trukhan,Arslanov,Zalibekov,Fedorchenkob

, p. 987 - 990 (2012)

Cd0.81Mn0.19GeP2 dilute magnetic semiconductor (DMS) has been subjected to a complex study of electric and magnetic properties under high hydrostatic pressures of up to 7 GPa with pressure rise and release. Electrical resistivity, Hall factor, transverse magnetoresistance, relative magnetic susceptibility, and volume magnetostriction have been measured. Compressibility (k) and spontaneous magnetization coeffi-cient (ωS) have been calculated. Pleiades Publishing, Ltd., 2012.

Structural models for covalent non-oxidic glasses. Atomic distribution and local order in glassy CdGeP2 studied by 31P and 113Cd MAS and spin-echo and 31P-113Cd spin-echo double resonance NMR spectroscopy

Franke, Deanna,Maxwell, Robert,Lathrop, David,Eckert, Hellmut

, p. 4822 - 4830 (2007/10/02)

The structure of glassy CdGeP2 is discussed on the basis of complementary solid-state NMR experiments, including 31P and 113Cd magic-angle spinning (MAS) and spin-echo techniques, as well as 31P-113Cd spin-echo double resonance (SEDOR) NMR. Modeling of the dipolar interactions in conjunction with experimental studies on the crystalline model compounds CdP2 and CdGeP2 reveals the short-range order present in crystalline CdGeP2 is not preserved upon verification. In contrast to the crystalline analogue, glassy CdGeP2 contains a substantial fraction of phosphorus-phosphorus bonds which can be quantitated by means of 31P spin-echo decay data. The analysis reveals that the number of P-P bonds amounts to 55 ± 5% of that expected for a completely random distribution of atoms. The 113Cd-31P SEDOR results are qualitatively consistent with this conclusion but suggest a more complete randomization of the Cd atoms. As a consequence of this randomization of atomic occupancies, the number of Cd-P bonds is significantly reduced in the glassy state. The study provides important experimental data for the development of realistic atomic distribution models for covalent non-oxidic glasses.

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