1015071-22-3 Usage
General Description
5-Fluoro-2,3-thiophenedicarboxaldehyde is a chemical compound with the molecular formula C6H3FO3S. It is an aldehyde derivative of thiophene containing a fluorine atom. This chemical is primarily used in pharmaceutical and organic synthesis as a building block for various compounds. It is also known for its potential use as an intermediate in the development of new materials and drugs. Additionally, 5-Fluoro-2,3-thiophenedicarboxaldehyde is considered to have interesting properties that make it an important target for chemical research and development.
Check Digit Verification of cas no
The CAS Registry Mumber 1015071-22-3 includes 10 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 7 digits, 1,0,1,5,0,7 and 1 respectively; the second part has 2 digits, 2 and 2 respectively.
Calculate Digit Verification of CAS Registry Number 1015071-22:
(9*1)+(8*0)+(7*1)+(6*5)+(5*0)+(4*7)+(3*1)+(2*2)+(1*2)=83
83 % 10 = 3
So 1015071-22-3 is a valid CAS Registry Number.
InChI:InChI=1S/C6H3FO2S/c7-6-1-4(2-8)5(3-9)10-6/h1-3H
1015071-22-3Relevant articles and documents
Chromophore fluorination enhances crystallization and stability of soluble anthradithiophene semiconductors
Subramanian, Sankar,Sung, Kyu Park,Parkin, Sean R.,Podzorov, Vitaly,Jackson, Thomas N.,Anthony, John E.
, p. 2706 - 2707 (2008/09/19)
We report dramatic improvements in the stability and crystallinity arising from partial fluorination of soluble anthradithiophene derivatives. These fluorinated materials still behave as p-type semiconductors but with dramatic increases in thermal and photostability compared to the non-fluorinated derivatives. The triethylsilyl-substituted material forms highly crystalline films even from spin-cast solutions, leading to devices with maximum hole mobility greater than1.0 cm2/V s. In contrast, the triisopropylsilyl derivative forms large, high-quality crystals that could serve as the substrate for transistor fabrication. For this compound, mobility as high as 0.1 cm2/V s was measured on the free-standing crystal. Copyright
