114030-19-2Relevant academic research and scientific papers
Substrate processing device and manufacturing method of semiconductor device
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, (2007/10/10)
An apparatus and a method for manufacturing a semiconductor device can provide a good quality film growth in a highly clean reaction atmosphere unaffected by contamination from a furnace opening portion. A reverse-diffusion preventing body 8 is provided between a furnace opening flange 7 and a boat susceptor 19 so that a substrate processing space 20 is isolated from a furnace opening portion space 21 to thereby prevent reverse-diffusion of a contaminant which occurs at a furnace opening portion B, to the substrate processing space 20. At a furnace opening flange 7, a furnace opening exhausting tube 15 is provided which constitutes a furnace opening system for exhausting the space 21 independently of the space 20 so that the space 21 is exhausted while being purged by supplying a purge gas into the space 21, to thereby remove a contaminant from the space 21. A gas supplying nozzle 4 which is introduced from the flange 7 is extended from the space 21 to the space 20 so that a reaction gas is directly introduced into the space 20 to thereby prevent a contaminant Within the space 21 from being involved in the space 20.
