12006-40-5

Usage

Uses

Used in Photo Optic Applications:
Zinc arsenide is used as a material in photo optic applications due to its ability to effectively interact with light. Its properties make it suitable for use in devices that require efficient light transmission and manipulation.
Used in Semiconductor Manufacturing:
Zinc arsenide is also used as a component in the manufacture of semiconductors. Its high purity levels and electronic doping grade make it an ideal material for creating semiconductors with specific characteristics and functionalities.
Used as Dopants:
In addition to its use in photo optic applications and semiconductor manufacturing, zinc arsenide is also utilized as a dopant. This means that it can be added to other materials to modify their electrical or optical properties, enhancing their performance in various applications.
Chemical Properties:
Zinc arsenide is available in different mesh sizes and purities, such as -20 mesh with 99% purity for arsine generation and 99.9999% purity for electronic doping grade. These variations allow for the customization of the material to suit specific application requirements.

InChI:InChI=1/2As.3Zn/q2*-3;3*+2

Upstream product

• 7440-66-6 zinc 

Relevant academic research and scientific papers

Synthesis, structure, and properties of the electron-poor II-V semiconductor ZnAs

ZnAs was synthesized at 6 GPa and 1273 K utilizing multianvil high-pressure techniques and structurally characterized by single-crystal and powder X-ray diffraction (space group Pbca (No. 61), a = 5.6768(2) A, b = 7.2796(2) A, c = 7.5593(2) A, Z = 8). The compound is isostructural to ZnSb (CdSb type) and displays multicenter bonded rhomboid rings Zn2As 2, which are connected to each other by classical two-center, two-electron bonds. At ambient pressure ZnAs is metastable with respect to Zn3As2 and ZnAs2. When heating at a rate of 10 K/min decomposition takes place at ～700 K. Diffuse reflectance measurements reveal a band gap of 0.9 eV. Electrical resistivity, thermopower, and thermal conductivity were measured in the temperature range of 2-400 K and compared to thermoelectric ZnSb. The room temperature values of the resistivity and thermopower are ～1 ω cm and +27 μV/K, respectively. These values are considerably higher and lower, respectively, compared to ZnSb. Above 150 K the thermal conductivity attains low values, around 2 W/m·K, which is similar to that of ZnSb. The heat capacity of ZnAs was measured between 2 and 300 K and partitioned into a Debye and two Einstein contributions with temperatures of θD = 234 K, θE1 = 95 K, and θE2 = 353 K. Heat capacity and thermal conductivity of ZnSb and ZnAs show very similar features, which possibly relates to their common electron-poor bonding properties.