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12024-10-1

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12024-10-1 Usage

Chemical Properties

6mm pieces and smaller with 99.999% purity; hexagonal, lamellar structure; air sensitive [KIR78] [STR93] [CER91]

Check Digit Verification of cas no

The CAS Registry Mumber 12024-10-1 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,2 and 4 respectively; the second part has 2 digits, 1 and 0 respectively.
Calculate Digit Verification of CAS Registry Number 12024-10:
(7*1)+(6*2)+(5*0)+(4*2)+(3*4)+(2*1)+(1*0)=41
41 % 10 = 1
So 12024-10-1 is a valid CAS Registry Number.
InChI:InChI=1/2Ga.3S/q2*+3;3*-2

12024-10-1SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 16, 2017

Revision Date: Aug 16, 2017

1.Identification

1.1 GHS Product identifier

Product name GALLIUM SULFIDE

1.2 Other means of identification

Product number -
Other names GaS

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:12024-10-1 SDS

12024-10-1Upstream product

12024-10-1Downstream Products

12024-10-1Related news

Mechanical stabilities and nonlinear properties of monolayer GALLIUM SULFIDE (cas 12024-10-1) under tension08/02/2019

The mechanical stabilities and nonlinear properties of monolayer Gallium sulfide (GaS) under tension are investigated using density functional theory (DFT). The ultimate stresses and ultimate strains, and the structure evolutions of monolayer GaS under armchair, zigzag, and equiaxial tensions ar...detailed

Fractal characteristics of nanocrystalline indium and GALLIUM SULFIDE (cas 12024-10-1) particles08/01/2019

The structure of nano-sized powders of indium sulfide (In2S3) and gallium sulfide (Ga2S3), prepared by single source precursor route has been investigated by small angle X-ray scattering technique. The particle morphology shows interesting fractal nature. For In2S3, the nanoparticle aggregates s...detailed

Conventional and rapid thermal annealing of spray pyrolyzed copper indium GALLIUM SULFIDE (cas 12024-10-1) thin films07/31/2019

With this study for the first time effects of post annealing on morphological, structural, optical and electrical properties of spray pyrolyzed copper–indium–gallium–sulfide (CuInGaS2) thin films have been investigated. Pros-and-cons of conventional (CA) and rapid thermal annealing (RTA) have...detailed

Silylated gallium–sulfur ring systems as single source precursors to hexagonal GALLIUM SULFIDE (cas 12024-10-1) (GaS)07/30/2019

New single source precursors to hexagonal gallium sulfide (GaS) were investigated. Four organometallic compounds containing a Ga2S2 ring core, [R2Ga(μ-SSiR′3)]2 (R = Me, Et; R′ = Ph, iPr), were prepared and thermally decomposed to give chemically pure gallium sulfide. The decomposition temper...detailed

GALLIUM SULFIDE (cas 12024-10-1) and indium sulfide nanoparticles from complex precursors: Synthesis and characterization07/29/2019

Nanocrystalline gallium sulfide (Ga2S3) and indium sulfide (In2S3) have been prepared by a two-step process. The first step involves metathesis reaction of trimethyl gallium/indium ether adduct (Me3Ga/In·OEt2) with 1,2-ethanedithiol (HSCH2CH2SH) resulting in the formation of a polymeric precurs...detailed

Mechanical characteristics of GALLIUM SULFIDE (cas 12024-10-1) crystals measured using micro- and nanoindentation07/27/2019

Gallium sulfide single crystal is a potential material for nonlinear optics. Due to its high non-linearity it can be used as a material for IR and THz frequency converters. In the present work GaS bulk crystals of precise stoichiometry and high quality were melt grown using vertical zone melting...detailed

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