12038-12-9 Usage
Uses
Used in Optoelectronic Applications:
Praseodymium Telluride is used as a semiconductor material in optoelectronic applications due to its unique electronic and optical properties. Its ability to manipulate light and electricity makes it suitable for use in devices such as photodetectors, solar cells, and light-emitting diodes (LEDs).
Used in Thermoelectric Applications:
In the field of thermoelectric applications, Praseodymium Telluride is utilized as a thermoelectric material for its ability to convert temperature differences into electrical voltage. This property makes it a valuable component in devices that require efficient energy conversion, such as thermoelectric generators and Peltier coolers.
Used in Research and Development:
Due to its unique chemical and physical properties, Praseodymium Telluride is also used in research and development for studying the fundamental properties of rare earth tellurides and their potential applications in various fields, including electronics, energy, and materials science.
Used in Advanced Materials:
Praseodymium Telluride is employed as a component in the development of advanced materials with tailored properties for specific applications. Its unique combination of electrical, optical, and thermal properties allows it to be used in the creation of new materials with improved performance in various industries, such as aerospace, automotive, and electronics.
Check Digit Verification of cas no
The CAS Registry Mumber 12038-12-9 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,3 and 8 respectively; the second part has 2 digits, 1 and 2 respectively.
Calculate Digit Verification of CAS Registry Number 12038-12:
(7*1)+(6*2)+(5*0)+(4*3)+(3*8)+(2*1)+(1*2)=59
59 % 10 = 9
So 12038-12-9 is a valid CAS Registry Number.
InChI:InChI=1/Pr.3Te/rPrTe3/c2-1(3)4
12038-12-9Relevant academic research and scientific papers
Magnetic properties of rare-earth metal tritellurides RTe3 (R=Ce,Pr,Nd,Gd,Dy)
Iyeiri, Yuji,Okumura, Teppei,Michioka, Chishiro,Suzuki, Kazuya
, p. 1 - 7 (2008/10/08)
The magnetic properties of RTe3 (R=Ce, Pr, Nd, Gd, Dy), which has a structure consisting of the alternate stacking of one RTe layer and two Te layers, were investigated using magnetization and electrical resistivity measurements. The magnetic transition temperatures were found at 3.0 K for R=Ce, 3.2 K for Nd, 11,5 K for Gd, and 4.5 K for Dy, respectively, and the Pr compound showed van Vleck paramagnetism. The ordered magnetic moment of RTe3 lies within the layer. In contrast, the ordered magnetic moments of RTe2, having alternate stacking of one RTe and one Te layer, point to the layer-stacking direction, although the point symmetry at the R site and the coordination of the Te atoms to the R atoms are almost the same. The difference of the magnetic anisotropy in RTe2 and RTe3 was discussed in terms of the effective charge of the Te atoms in the Te layer with an electron charge transferred from the RTe layer. We propose magnetic compounds designed by charge introduction based on this result.
