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12044-55-2

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12044-55-2 Usage

Uses

Zinc arsenide is often used as a component in the manufacture of semiconductors.

Check Digit Verification of cas no

The CAS Registry Mumber 12044-55-2 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,4 and 4 respectively; the second part has 2 digits, 5 and 5 respectively.
Calculate Digit Verification of CAS Registry Number 12044-55:
(7*1)+(6*2)+(5*0)+(4*4)+(3*4)+(2*5)+(1*5)=62
62 % 10 = 2
So 12044-55-2 is a valid CAS Registry Number.
InChI:InChI=1/2As2H.Zn/c2*1-2;/h2*1H;/q2*-1;+2

12044-55-2 Well-known Company Product Price

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  • Alfa Aesar

  • (36189)  Zinc arsenide, 99.999% (metals basis)   

  • 12044-55-2

  • 2g

  • 460.0CNY

  • Detail
  • Alfa Aesar

  • (36189)  Zinc arsenide, 99.999% (metals basis)   

  • 12044-55-2

  • 10g

  • 1656.0CNY

  • Detail

12044-55-2SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 17, 2017

Revision Date: Aug 17, 2017

1.Identification

1.1 GHS Product identifier

Product name Zinc arsenide

1.2 Other means of identification

Product number -
Other names ZINC ARSENIDE

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:12044-55-2 SDS

12044-55-2Upstream product

12044-55-2Downstream Products

12044-55-2Relevant academic research and scientific papers

Phase relations in the Zn3As2-ZnAs 2-CdAs2-Cd3As2 system

Marenkin,Vol'fkovich,Mikhailov,Astakhov

, p. 911 - 915 (2003)

Phase relations along the Cd3As2-ZnAs2 and Zn3As2-CdAs2 joins are studied by differential thermal analysis, x-ray diffraction, and microstructural analysis. The results, in conjunction with

Phase relations in the Si-ZnAs2 system in the range 45-100 mol % ZnAs2

Marenkin,Fedorchenko,Shabunina,Kupriyanova

, p. 1321 - 1325 (2009)

The Si-ZnAs2 pseudobinary join of the Zn-Si-As system has been studied using physicochemical characterization techniques. It contains a congruently melting compound of composition ZnSiAs2 and has two eutectics: Si-ZnSiAs2,

Phase diagram of ZnAs2–MnAs system

Marenkin, Sergey F.,Ril, Alexey I.,Fedorchenko, Irina V.

, p. 219 - 221 (2018)

The ZnAs2–MnAs system, characterized by X-ray powder diffraction, differential thermal and microstructure studies, is of the eutectic type, with the coordinates of eutectic 73 mol% ZnAs2 and 27 mol% MnAs and Tm = 716 °C. T

Join Si-ZnAs2 of the ternary system Zn-Si-As

Fedorchenko,Kupriyanova,Marenkin,Kochura

, p. 1139 - 1143 (2008)

The quasi-binary join Si-ZnAs2 of the system Zn-Si-As was studied by physicochemical methods. The congruently melting compound ZnSiAs 2 and eutectics Si + ZnSiAs2 and ZnSiAs2 + ZnAs2 are formed along

Phase equilibria in the ZnGeAs2-CdGeAs2 system

Fedorchenko, Irina V.,Aronov, Alexey N.,Kilanski, Lukasz,Domukhovski, Victor,Reszka, Anna,Kowalski, Bogdan J.,L?hderanta, Erkki,Dobrowolski, Witold,Izotov, Alexander D.,Marenkin, Sergey F.

, p. 121 - 126 (2014)

The phase equilibria in the ZnGeAs2-CdGeAs2 system were investigated by X-ray, DTA, EDXRF, microstructure observations and SEM. The solid solutions are present in all range of concentrations above 440 C. Below this temperature a deca

Magnetic properties of the new diluted magnetic semiconductor Zn1-xMnxAs2: evidence of MnAs clusters

Laiho,Lisunov,Lahderanta,Zakhvalinskii

, p. 555 - 568 (1999)

The preparation and magnetic properties of the diluted magnetic semiconductor Zn1-xMnxAs2, opening a novel group of II-V2 compounds alloyed with transition metal elements, are reported for the first time. Single crystals of Zn1-xMnxAs2 are obtained with a modified Bridgman method. For x ≤ 0.2 their structure is isomorphic to the ZnAs2 parent compound. Magnetic properties of Zn1-xMnxAs2 are investigated for x = 0.01, 0.05 and 0.1 between T = 2 and 500 K in fields up to 60 kG. All the samples show a steep decrease of magnetization well above 300 K. In low fields (2-200 G) the temperature dependence of the magnetic susceptibility is strongly irreversible below Tb ≈ 250 K. The magnetization displays nonlinear field dependence starting from B approx. 1-2 kG and reaching full saturation above 40 kG. Its temperature dependence is weak between 2 and 300 K. The magnetic properties are explained by the presence of MnAs clusters. The distribution of cluster sizes is described by three overlapping Gaussian functions with the maxima at 1.7, 2.4 and 3.3 nm. At 300 K the corresponding magnetic moments are found to be 1.5, 4.1 and 10.4 in units of 103 μB.

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