12046-36-5

Usage

Uses

Used in High-Temperature and High-Power Electronic Devices:
Holmium hexaboride is utilized as a material in high-temperature and high-power electronic devices due to its excellent thermal and electrical conductivity, which allows for efficient performance in extreme conditions.
Used in Thermionic Energy Conversion:
In the field of thermionic energy conversion, holmium hexaboride serves as a crucial component, leveraging its high melting point and thermal properties to enhance energy conversion efficiency.
Used in Advanced Technologies:
Holmium hexaboride is employed as a material in various advanced technologies, capitalizing on its unique magnetic and optical properties to enable innovative applications in different industries.
Used in Catalysts:
As a catalyst, holmium hexaboride is used to facilitate chemical reactions, improving efficiency and selectivity in various industrial processes.
Used in Nuclear Energy Research:
In the realm of nuclear energy research, holmium hexaboride is explored for its potential applications, including its use in the development of new materials and technologies for nuclear power systems.

Upstream product

• 13598-41-9 holmium 

Relevant academic research and scientific papers

The ternary RE-Si-B systems (RE = Dy, Ho, Er and Y) at 1270 K: Solid state phase equilibria and magnetic properties of the solid solution REB2-xSix (RE = Dy and Ho)

The solid state phase equilibria in the ternary RE-Si-B diagrams (RE = Dy, Ho, Er and Y) were determined at 1270 K using experimental techniques such as X-ray diffraction, scanning electron microscopy and electron probe microanalysis. In general, three ternary phases were obtained for each diagram: the line compound RE5Si2B8 with tetragonal symmetry, the boron-inserted Nowotny phase RE5Si3Bx of Mn5Si3-type and the solid solution REB2-xSix of AlB2-type. Prior to this work, the binary systems RE-Si and RE-B, which form the boundary of each diagram, were also re-investigated. In addition to the structures of RE5Si3 (Mn5Si3-type, RE = Dy, Ho and Y) and Dy3Si4 (Ho3Si4-type) which were previously reported or will be presented in a forthcoming paper, the X-ray single crystal structures of RE5Si4 (Sm5Ge4-type, RE = Dy and Ho), DySi (CrB-type) and HoSi in both polymorphic modifications, i.e. the FeB- (high temperature) and CrB- (low temperature) types, were determined and are described herein. Structural relationships between members of the same series on one side, and between both forms of HoSi on the other side, are also discussed in terms of coordination polyhedra and interatomic distances. Finally, magnetic measurements were performed on the alloys REB2-xSix, which in case of RE = Dy exhibit a marked increase of the magneto-crystalline anisotropy, whereas for RE = Ho a change from ferromagnetic to antiferromagnetic behaviour with increasing silicon content is encountered.

Large crystal structure distortion in DyB6 studied by X-ray diffraction

A large magnetoelastic coupling induces a lattice distortion of a rhombohedral type in DyB6. Below the quadrupolar ordering temperature TQ=31K the cubic and the distorted phases coexist. The cubic phase disappears at 23K, which was identified as the magnetic ordering point TN. In the magnetic phase the distortion (dl/l)111 increases monotonically with decreasing temperature and reaches the value of 9 × 10-3 at 8 K, which is one of the largest value known for cubic compounds.

Single Crystal Growth and Properties of Incongruently Melting TbB6, DyB6, HoB6, and YB6

Details of the single crystal growth of incongruently melting TbB6, DyB6, HoB6, and YB6using a crucible-free vertical floating zone method are reported. Magnetic susceptibility is reported and discussed. It is suggested that antiferro-quadrupolar ordering occurs in DyB6between 30 and 25.6 K.