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12056-07-4

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12056-07-4 Usage

Chemical Properties

black crystal(s); ortho-rhomb; used in the form of 99.999% pure material as a sputtering target for production of semiconductors [MER06] [CER91]

Uses

Indium(III) selenide is used in photovoltaic devices. It is also used for optoelectronics and in solar cells.

General Description

Indium selenide (In2Se3) exists in 4 crystal structures (α,β,δ,γ).The metallic α-phase of indium selenide converts to intrinsic conduction β-phase under change in temperature. In2Se3 can be prepared by stoichiometric combination of the elements at 1000 to 1100oC temperatures. Influence of phase transformations on its optical and electrical properties has been reported.

Check Digit Verification of cas no

The CAS Registry Mumber 12056-07-4 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,5 and 6 respectively; the second part has 2 digits, 0 and 7 respectively.
Calculate Digit Verification of CAS Registry Number 12056-07:
(7*1)+(6*2)+(5*0)+(4*5)+(3*6)+(2*0)+(1*7)=64
64 % 10 = 4
So 12056-07-4 is a valid CAS Registry Number.
InChI:InChI=1/2In.3Se/q2*+3;3*-2

12056-07-4 Well-known Company Product Price

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  • Alfa Aesar

  • (88280)  Indium(III) selenide, 99.99% (metals basis)   

  • 12056-07-4

  • 5g

  • 1146.0CNY

  • Detail
  • Alfa Aesar

  • (88280)  Indium(III) selenide, 99.99% (metals basis)   

  • 12056-07-4

  • 25g

  • 4456.0CNY

  • Detail
  • Aldrich

  • (403318)  Indium(III)selenide  

  • 12056-07-4

  • 403318-5G

  • 1,418.04CNY

  • Detail

12056-07-4SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 12, 2017

Revision Date: Aug 12, 2017

1.Identification

1.1 GHS Product identifier

Product name INDIUM SELENIDE

1.2 Other means of identification

Product number -
Other names diindium triselenide

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:12056-07-4 SDS

12056-07-4Upstream product

12056-07-4Downstream Products

12056-07-4Related news

Crystalline Zinc INDIUM SELENIDE (cas 12056-07-4) Thin Film Electrosynthesis and its Photoelectrochemical Studies08/03/2019

A room temperature electrochemical synthesis of Zinc Indium Selenide (ZnIn2Se4) thin films has been carried out. The films were polycrystalline and exhibited n-type conductivity. ZnIn2Se4 films were found to be photoactive in polysulphide solution. The photo electrochemical (PEC) studies of thes...detailed

(Photo)electrochemical analysis of electrosynthesized fibrous cadmium INDIUM SELENIDE (cas 12056-07-4) (CdIn2Se4) thin films08/02/2019

Electrosynthesized cadmium indium selenide (CdIn2Se4) thin films were (photo) electrochemically analyzed by current–voltage characteristics, photoresponse, speed response, electrochemical impedance study, and capacitance–voltage characteristics. The improved photoconversion efficiency of elect...detailed

Brush electrodeposited silver INDIUM SELENIDE (cas 12056-07-4) films and their optical characteristics08/01/2019

Silver indium selenide films were brush electrodeposited on tin oxide coated glass substrates at different substrate temperatures. The films were single phase with chalcopyrite structure. Optical absorption measurements indicated a band gap in the range of 1.20–1.30 eV with decrease of substrat...detailed

Non-toxic configuration of INDIUM SELENIDE (cas 12056-07-4) nanoparticles- Cu2ZnSnS2Se2 /carbon fabric in a quasi solid-state solar cell07/31/2019

Non-toxic indium selenide (In2Se3) semiconducting nanoparticles as photosensitizers and an alloyed copper-zinc-tin-sulfide-selenide (Cu2ZnSnS2Se2) coated carbon-fabric as counter electrode are assembled into a solar cell configuration for the first time. In2Se3 nanoparticles with a band gap of 1...detailed

Influence of indium concentration on the structural and optoelectronic properties of INDIUM SELENIDE (cas 12056-07-4) thin films07/29/2019

We have grown indium selenide thin films using magnetron sputtering method. The influence of indium concentration on the structural, optical and electrical properties was studied. The concentration of indium in indium selenide thin films was varied by adjusting the sputtering power from 40 to 80...detailed

Intriguing electronic properties of germanene/ INDIUM SELENIDE (cas 12056-07-4) and antimonene/ INDIUM SELENIDE (cas 12056-07-4) heterostructures07/27/2019

The structural and electronic properties of the germanene/indium selenide (Ge/InSe), antimonene/indium selenide (Sb/InSe) heterostructures and the effects of in-plane strains on their electronic structures are investigated by performing comprehensive DFT calculations. The results show that the h...detailed

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