12064-03-8

Basic information

• Product Name: GALLIUM ANTIMONIDE
• Synonyms: antimony,compd.withgallium(1:1);GALLIUM ANTIMONIDE;GALLIUM ANTIMONIDE PIECES -6 MESH &;Gallium antimonide, single crystal substrate (100);GALLIUM ANTIMONIDE, 99.999%;Gallium antimonide, 99.99% (metals basis);Gallium antimonide, 99% (metals basis);Gallium Antimonide 99.99%
• CAS NO: 12064-03-8
• Molecular Formula: GaSb
• Molecular Weight: 191.48
• EINECS: 235-058-8
• Product Categories: Inorganics;Electronic Materials;Materials Science;Micro/Nanoelectronics
• Mol File: 12064-03-8.mol
• Article Data: 0

Chemical Properties

• Melting Point: 980 °C(lit.)
• Appearance: /pieces
• Density: 5.62 g/mL at 25 °C(lit.)
• Water Solubility: Insoluble in water.
• CAS DataBase Reference: GALLIUM ANTIMONIDE(CAS DataBase Reference)
• NIST Chemistry Reference: GALLIUM ANTIMONIDE(12064-03-8)
• EPA Substance Registry System: GALLIUM ANTIMONIDE(12064-03-8)

Safety Data

• Hazard Codes: Xn,N
• Statements: 20/22-51/53
• Safety Statements: 61
• RIDADR: UN 1549 6.1/PG 3
• WGK Germany: 2
• TSCA: Yes
• HazardClass: 6.1
• PackingGroup: III
• Hazardous Substances Data: 12064-03-8(Hazardous Substances Data)

Usage

Chemical Properties

cub; 6mm pieces and smaller with 99.99% purity; band gap, eV, 0.81 (0K), 0.72 (300K); mobility (300K), cm2/(V·s), 5000 for electrons, 850 for holes; effective mass 0.042 for electrons, 0.40 for holes; dielectric constant 15.7; enthalpy of fusion 25.10kJ/mol; used in semiconducting devices; obtained by direct reaction of Ga and Sb at high temp [HAW93] [KIR82] [CER91] [CRC10]

Uses

Different sources of media describe the Uses of 12064-03-8 differently. You can refer to the following data:
1. Gallium antimonide (GaSb), when in pure form, is used in semiconductor industries.
2. Gallium antimonide can be used for Infrared detectors, infrared LEDs and lasers and transistors, and thermophotovoltaic systems. It can be used as a component of photoresists and other composites where high refractive index is desirable
3. Semiconducting devices.

InChI:InChI=1/Ga.Sb/q+3;

Related news

Swift heavy silver (Ag+7) ion irradiation induced self assembled nanodots on MBE grown GALLIUM ANTIMONIDE (cas 12064-03-8) (GaSb)07/30/2019

100 MeV swift heavy silver (Ag+7) ion irradiation at normal incidence results in the formation of dense and ordered nanosized dots on molecular beam epitaxy (MBE) grown GaSb epitaxial layers. The shape, size and density of the nanodots are found to be strongly dependent on the ion fluence. Ripen...detailed

Defect reactions in GALLIUM ANTIMONIDE (cas 12064-03-8) studied by zinc and self-diffusion07/29/2019

Extrinsic diffusion of zinc (Zn) in gallium antimonide (GaSb) under Ga-rich conditions was analyzed on the basis of the kick-out and the dissociative diffusion mechanism. It is concluded that the changeover of interstitial Zn to substitutional gallium (Ga) sites is mainly mediated by Ga intersti...detailed