12067-66-2

Basic information

• Product Name: TANTALUM TELLURIDE
• Synonyms: TANTALUM TELLURIDE;TANTALUM (IV) TELLURIDE;tantalum ditelluride;Einecs 235-083-4;Tantalum telluride (tate2)
• CAS NO: 12067-66-2
• Molecular Formula: TaTe2
• Molecular Weight: 436.15
• EINECS: 235-083-4
• Mol File: 12067-66-2.mol
• Article Data: 9

Chemical Properties

• Boiling Point: °Cat760mmHg
• Flash Point: °C
• Appearance: /monoclinic crystals
• Density: 9.400
• CAS DataBase Reference: TANTALUM TELLURIDE(CAS DataBase Reference)
• NIST Chemistry Reference: TANTALUM TELLURIDE(12067-66-2)
• EPA Substance Registry System: TANTALUM TELLURIDE(12067-66-2)

Safety Data

• Hazardous Substances Data: 12067-66-2(Hazardous Substances Data)

Usage

General Description

Tantalum telluride is a compound consisting of tantalum and tellurium, with a chemical formula of TaTe2. It is a member of the transition metal dichalcogenide family, which are known for their semiconducting properties and potential applications in electronic devices. Tantalum telluride has a layered structure with strong covalent bonds within the layers and weak interactions between the layers, making it suitable for use in nanoelectronics and other advanced technologies. It exhibits unique electronic and thermal properties, such as high conductivity and the ability to undergo structural phase transitions at low temperatures, making it a promising material for various practical applications in the field of materials science and electronics.

InChI:InChI=1/Ta.2Te/rTaTe2/c2-1-3

Upstream product

• 14683-12-6 tellurium 
• 7721-01-9 tantalum pentachloride 

Downstream Products

• 12034-41-2 disodium telluride 

Related news

Hexagonal approximants of a dodecagonal TANTALUM TELLURIDE (cas 12067-66-2) — the crystal structure of Ta21Te1307/28/2019

The structure of a hexagonal approximant of the dodecagonal tantalum telluride dd-Ta1.6Te was studied by means of high resolution transmission electron microscopy and electron diffraction. A hierarchical building principle underlying the structures of two other approximants, Ta97Te60 and Ta181Te...detailed

Relevant articles and documents

Microwave-assisted synthesis of few-layered TaTe2 and its application as supercapacitor

We report a simple and rapid microwave-assisted synthesis of tantalum telluride (TaTe2) nanosheets. The ratio of tantalum pentachloride (TaCl5) and elemental tellurium (Te) powder were adjusted in the presence of NaBH4 in such a way as to obtain the TaTe2 nanosheet. The samples were characterized by various techniques such as scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), UV/Vis spectroscopy, photoluminescence (PL) spectroscopy, and XRD. Our SEM, TEM, and AFM results show the formation of sheet-like morphology, while the XRD data confirms the high crystalline quality and stable phase of the TaTe2 formed. The supercapacitor cells were fabricated by using TaTe2 nanosheets as anode material, platinum metal wire as a counterelectrode, and Ag/AgCl as reference electrode. The calculated coulombic efficiency is more than 95 , while the cycle-to-cycle decrease in capacity is less than 5 . The maximum discharge or charging capacity is below 2.4 Wh/kg, which is an ideal characteristic for achieving supercapacitor behavior. The first experimental investigations on the use of microwave to synthesize atomically thin few-layer TaTe2 nanosheets are described. This material also shows good performance as a supercapacitor.

Synthesis of tantalum tellurides. The crystal structure of Ta2Te3

Ta2Te3 was prepared by reducing TaTe2 with tantalum at 1350 K in a sealed molybdenum crucible. Ta2Te3 disproportionates above 1420 K yielding the ditelluride and as yet unknown Ta6Te5. The stability limit for the substitutional sesquitellurides NbxTa2-xTe3 is reached at x = 1. The novel layered-type structure of Ta2Te3 (C 2/m, N = 4; a = 2049.5(3) pm, b = 349.96(4) pm, c = 1223.7(2) pm, β = 143.74(1)° (Guinier), N(I0) = 762 with I0 > 2?(I0), 32 variables, R = 0.032) can be considered a stuffed variant of a molybdenite structure type. It consists of corrugated layers ∞2(Te-Ta4/3-Te) which, according to the shortest interlayer contacts Te-Te (372.9 pm), order via van der Waals interactions. Extended homonuclear bonding regions (297.1 pm ≤ dTa-Ta ≤ 309.7 pm) within the metal layers contribute to the stability of the metallic sesquitelluride.

Cytotoxicity of Group 5 Transition Metal Ditellurides (MTe2; M=V, Nb, Ta)

Much research effort has been put in to study layered compounds with transition metal dichalcogenides (TMDs) being one of the most studied compounds. Due to their extraordinary properties such as excellent electrochemical properties, tuneable band gaps, a

The metal-rich layer structure of Ta6STe3

Ta6S1+xTe3-x was prepared from an appropriate mixture of 2H-Ta1.3S2, TaTe2, and Ta in a fused tantalum tube at 1273 K within 3 d. The results of a X-ray single crystal structure analysis for a phase near the Te-rich limit of the homogeneity range are reported. Ta6S1.00Te3.00(1) crystallizes in the triclinic space group P1?, a = 993.14(8) pm, b = 1032.18(8) pm, c = 1378.78(11) pm, α = 79.32(1)°, β= 81.36(1)°, γ = 85.74(1)°, Z = 6, Pearson symbol aP60, 6048 Io > 2σ (Io), 286 variables, wR2 = 0.067. The metal-rich layer structure of Ta6STe3 comprises distorted icosahedral Ta13 clusters and related deltahedral cluster fragments complemented by chalcogen atoms. The centred clusters consist of 11, 12, 13, 14, or 16 atoms. They interpenetrate into lamellae in which the tantalum and chalcogen atoms are spatially segregated according to 2∞[Q-Ta3-Q]. The signature of the structure is a lenticular heptagonal antiprismatic Ta30 cluster which seems to be excised from the pentagonal antiprismatic columnar structure of Ta6S. The Ta30 clusters and distorted icosahedral Ta13 clusters are connected and fused into puckered layers. The rest of the tantalum valences are used for heteronuclear bonding. The chalcogen atoms having three to six next tantalum atoms coat the corrugated, tetrahedrally close-packed layers. Ta6STe3 is a moderate metallic conductor (P293 K = 3 x 10-4 Ωcm) exhibiting typical temperature independent paramagnetic properties.